Sumitomo Chemical Company, Limited

Masaya Shimizu

Yasushi Iyechika

Yoshinobu Ono

Yoshihiko Tsuchida

Tomoyuki Takada

Makoto Sasaki

Kenji Kasahara

Shinichi Morishima

Toshihisa Katamine

Tomoki Kurata

An electric device includes a support substrate, an electric circuitprovided in a sealing region set on the support substrate, an electric wiring provided on the support substratefor electrically connecting an external electrical signal input/output source with the electric circuit, a sealing memberprovided on the support substrateto surround the sealing region, and a sealing substratebonded to the support substratewith the sealing memberinterposed therebetween. the electric circuitincludes an electronic elementhaving an organic layer, and a width of the sealing memberdiffers between an intersection region in which the electric wiringand the sealing memberintersect each other and a non-intersection region excluding the intersection region.

Electric device and production method therefor

A group III-V compound semiconductor comprising a single quantum well structure which has two barrier layers and a quantum well layer represented by the formula: InGaAlN (wherein x+y+z=1, 0&#x3c;x&#x3c;1, 0&#x3c;y&#x3c;1, and 0&#x2266;z&#x3c;1) between the barrier layers, wherein a multiple quantum well structure having repeatedly the barrier layers and the quantum well layer is formed, a ratio of an average mole fraction of InN in the multiple quantum well layer, which is measured by x-ray diffraction, to a mole fraction of InN calculated from a wavelength of light emitted from the group III-V compound semiconductor due to current injection is not more than 42.5%.

Compound semiconductor and method for producing same

A Group III-V compound semiconductor includes, at least, a substrate, a buffer layer of the general formula InGaAlN (wherein, 0&#x2266;u&#x2266;1, 0&#x2266;v&#x2266;1, 0&#x2266;w&#x2266;1, u+v+w=1) and a Group III-V compound semiconductor crystal layer of the general formula InGaAlN (wherein, 0&#x2266;x&#x2266;1, 0&#x2266;y&#x2266;1, 0&#x2266;z&#x2266;1, x+y+z=1), in this order, wherein the buffer layer has a thickness of at least about 5 &#x212b; and not more than about 90 &#x212b;. A method is provided for producing the Group III-V compound semiconductor, including forming a buffer layer of the general formula InGaAlN on a substrate to give a thickness of at least about 5 &#x212b; and not more than about 90 &#x212b; at temperatures lower than the growing temperature of the compound semiconductor crystal layer before growing the compound semiconductor crystal layer, and then growing a Group III-V compound semiconductor crystal layer of the general formula InGaAlN on the buffer layer.

Method for producing a Group III-V compound semiconductor

A group 3&#x2013;5 compound semiconductor comprising an interface of two layers having lattice mismatch, an intermediate layer having a film thickness of 25 nm or more and a quantum well layer, in this order. The compound semiconductor has high crystallinity and high quality, and suitably used for a light emitting diode.

Group 3-5 compound semiconductor and light emitting diode

In a semiconductor manufacturing system for manufacturing compound semiconductor by MOCVD, a lead-in member is provided for guiding feed gas supplied from a feed gas supply unit onto the surface of a semiconductor substrate disposed in a reactor, a main body of the lead-in member is constituted as a hollow member to form a feed gas guide passage for conducting the feed gas in an prescribed direction and is formed with multiple orifices, and the feed gas in the feed gas guide passage is jetted from the orifices in a direction perpendicular to the prescribed direction so that the semiconductor substrate is bathed in a feed gas flow of uniform amount jetted from the lead-in member in this manner. Furthermore, a pressure differential produced between the inner side and outer side of the nozzle member enables the feed gas jetted from the nozzle member to flow over the whole surface of the substrate at a uniform flow rate. The multiple feed gases are led to the vicinity of the substrate individually and the blow gas blows the multiple feed gases toward the substrate to favorably from desired thin film crystal.

Method and system for manufacturing III-V Group compound semiconductor and III-V Group compound semiconductor

In the method of producing the - group compound semiconductor carrying out the lateral direction selective growth of the desired GaN type - group compound-semiconductor layer on this c-plane by the stripe mask formed on the c-plane of the underlying crystal containing a GaN type - group compound semiconductor, a stripe mask is formed on the underlying crystal such that the direction of the stripe is rotated 0.095&deg; or more and less than 9.6&deg; from <1-100> direction, and with using this stripe mask, the lateral direction selective growth of the GaN type - group compound-semiconductor layer is carried out, and a high quality - group compound-semiconductor layer can be formed on the underlying crystal.

Method of producing 3-5 group compound semiconductor and semiconductor element

A method for manufacturing a group III-V compound semiconductor represented by the general formula In,Ga,Al,N (where x&plus;y&plus;z&equals;1, 0&lE;x&lE;1, 0&lE;y&lE;1, and 0&lE;z&lE;1) by metalorganic vapor phase epitaxy method is provided. The group III-V compound semiconductor has a semiconductor layer consisting of a p-type dopant-nondoped layer, and a semiconductor layer including a p-type dopant-doped layer. In the method, a reactor for growing the semiconductor layer consisting of a p-type dopant-nondoped layer and a reactor for doping a p-type dopant are mutually different.

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Niihama, Japan

Masaya Shimizu