Toshiba Memory Corporation

Kabushiki Kaisha Toshiba

Masaya Shima

Eiji Takano

Ippei Kume

Kenji Takahashi

Soichi Homma

Yuki Noda

Takao Sato

Hirokazu Ezawa

Tatsuo Migita

Yuusuke Takano

Takeshi Watanabe

Soichi Yamashita

Takashi Shirono

Katsunori Shibuya

Tatsuhiko Shirakawa

Eiichi Shin

Mika Fujii

Jun Tanaka

According to one embodiment, a method of manufacturing a semiconductor device includes: forming a semiconductor feature on a first surface of a substrate; forming a first insulating film on the semiconductor feature; forming a first wiring layer on the first insulating film; forming a second insulating film on the first wiring layer; forming a second wiring layer on the second insulating film; forming a first electrode on the second wiring layer; providing a protective adhesive that covers the first electrode and the second wiring layer; bonding a supporting substrate onto the protective adhesive; polishing a second surface of the substrate opposite to the first surface; removing the supporting substrate from the protective adhesive; and removing at least a portion of the protective adhesive to expose the first electrode.

Method of manufacturing semiconductor device

According to one embodiment, a method of manufacturing a semiconductor device includes: bonding a first surface of a device substrate on which a device is formed on a first surface to a support substrate via an adhesive; after bonding the device substrate to the support substrate, grinding and thinning a second surface side opposite to the first surface of the device substrate based on an in-plane processing rate at the time of forming a semiconductor substrate by RIE; after thinning the device substrate, forming a hole penetrating the device substrate by RIE; and burying metal in the hole to forma through electrode.

A method of manufacturing a semiconductor device includes stacking a first substrate comprising a first surface having a semiconductor element and an opposing second surface and a second substrate comprising a third surface having a semiconductor element and an opposing fourth surface, forming a first contact hole extending from the second surface to the first surface of the first substrate and forming a first groove inwardly of a first region of the second surface of the first substrate by etching inwardly of the first substrate from the second surface thereof, forming a first patterned mask on the first substrate, so that the first groove is covered by the material of the first patterned mask, forming a first metal electrode in the first contact hole through an opening in the first mask as a mask, and removing the first mask and subsequently cutting through the first substrate in the first groove.

Method of manufacturing semiconductor device and semiconductor device

According to one embodiment, a semiconductor manufacturing method for a stacked body that includes a semiconductor substrate, a supporting substrate containing silicon, and a joining layer arranged between the semiconductor substrate and the supporting substrate to joint the semiconductor substrate and the supporting substrate, in which a surface of the semiconductor substrate opposite to the joining layer is to be ground, includes irradiating the stacked body with electromagnetic wave having energy of 0.11 to 0.14 eV from a side of the supporting substrate, and separating the semiconductor substrate from the supporting substrate.

Semiconductor manufacturing method and semiconductor manufacturing device

An apparatus for manufacturing a semiconductor device includes a stage configured to hold tape adhering to a second surface of a semiconductor wafer having the second surface and a first surface opposite to the second surface, a vacuum mechanism attachable to an upper side of a substrate provided to adhere to the first surface, a driving unit configured to drive the vacuum mechanism in a direction by which the vacuum mechanism is separated from the substrate, and a cooling unit configured to cool the tape.

Manufacturing apparatus and manufacturing method of semiconductor device

A method of manufacturing a semiconductor device includes disposing a peel-off layer on the second surface of the first substrate, wherein the second surface of the first substrate comprises semiconductor integrated circuits, and the peel-off layer does not extend to an outer peripheral portion of the first substrate, bonding a second substrate to the peel-off layer via a bonding layer, attaching a tape onto the first surface of the first substrate, wherein the tape comprises an adhesive agent having an adhesive strength capable of being lowered by UV irradiation, irradiating a portion of the adhesive agent provided at the outer peripheral portion with UV rays directed toward the first surface, and separating the first substrate from the second substrate at the adhesive agent portion and the peel-off layer portion.

Method for manufacturing semiconductor devices through peeling using UV-ray

In a method for manufacturing a semiconductor device, a resin layer including an inorganic filler is molded on a surface of a substrate which includes semiconductor elements attached thereto by an adhesive, and terminals electrically connected to the semiconductor elements on another surface thereof. The molded substrate is cut so as to expose a conductive body electrically connected to an external terminal maintainable at ground potential. The surface of the resin layer of the substrate is sputter-etched in a vacuum environment, in a state where a plurality of the cut substrates is provided in a tray so that the surface of the substrate faces the tray. A metal layer is sputtered so as to be electrically connected to the conductive body on the surface and the cut surface in a state where the substrate is provided in the tray while maintaining the vacuum environment after sputter-etching.

Method for manufacturing semiconductor device and semiconductor device

According to one embodiment, a semiconductor substrate, a redistribution trace, and a surface layer are provided, with the surface layer provided on the redistribution trace. On the semiconductor substrate, a wire and a pad electrode are formed. The redistribution trace is formed on the semiconductor substrate. The surface layer is larger in width than the redistribution trace, and extends beyond the edge of the redistribution trace.

Bump structure with underbump metallization structure and integrated redistribution layer

A resin layer made of thermoplastic resin is formed on a supporting substrate, and then, an insulating layer is formed on the first resin layer. Then, an interlayer connector is formed through the insulating layer and then, a wiring layer is formed on the first resin layer so as to be electrically connected with the interlayer connector. Thereafter, a first semiconductor chip is mounted on the wiring layer. Then, the first resin layer is heated so that the supporting substrate and the insulating layer are relatively shifted one another to shear the first resin layer, thereby separating the supporting substrate and the insulating layer and forming a semiconductor device.

Growing community of inventors

Oita Oita, Japan

Masaya Shima