Rohm Co., Ltd.

Masaya Saito

Masaya Ueno

Sawa Haruyama

A semiconductor device includes: a semiconductor layer including a semiconductor substrate and an epitaxial layer of a first conductivity type formed on the semiconductor substrate; a surface electrode containing at least one selected from the group consisting of an aluminum alloy and aluminum and formed on the semiconductor layer; and an impurity region of a second conductivity type formed on a surface layer portion of the epitaxial layer and forming a pn junction with the epitaxial layer, wherein the surface electrode includes a Schottky portion that is in contact with a surface of the semiconductor layer and forms a Schottky junction with the epitaxial layer.

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Kyoto, Japan

Masaya Saito