Osaka University

Showa Denko K.k.

Nof Corporation

Nippon Mektron Limited

Masaya Nogi

Natsuki Komoda

Hiroshi Uchida

Masayuki Iwase

Hirofumi Matsumoto

Kenji Shinozaki

Katsuaki Suganuma

Hideki Ohata

Masanao Hara

Eui-chul Kang

Jinting Jiu

Kazuyuki Ozaki

Teppei Araki

Keizo Toyama

Eri Okazaki

Tomoyuki Ohtake

Tohru Sugahara

Hirotaka Koga

Provided are a metal nanowire production method capable of producing long and thin metal nanowires, and metal nanowires produced thereby. A metal nanowire production method comprising, a step for preparing a solution containing a metal salt, a polymer, at least one selected from a group consisting of halides, sulfides, carbonates, and sulfates, and an aliphatic alcohol, and a step for heating and reacting the solution at the temperature of 100&#xb0; C. to 250&#xb0; C. for 10 minutes or more while maintaining a practical shear stress applied to the solution at 10 mPa&#xb7;m or less, wherein, during the heating and reacting step, ultraviolet-visible absorption spectrum change of the solution is measured, and a reaction time is controlled on the basis of the ultraviolet-visible absorption spectrum information.

Method for producing metal nanowires and silver nanowires

Disclosed are an insulating material (high-k layer) which includes a fiber assembly mainly composed of a cellulose nanofiber, and an electroconductive metal material supported by the fiber assembly; and a passive element (capacitor) which includes a high-k layer which is composed of the insulating material, and an electroconductive part stacked on the high-k layer.

Insulating material, passive element, circuit board, and method of manufacturing an insulating sheet

A composition for copper patterning and a method of copper patterning using the composition are provided, which composition is excellently safe in copper patterning, sintering at lower temperatures, and capable of forming a highly conducive copper pattern of a desired shape even on a plastic substrate. The composition contains Component A: a copper &#x3b2;-ketocarboxylate compound of formula (1): (R1, R2: H or C1-C6 straight- or C3-C6 branched-hydrocarbon group, etc.); and based on 1 mol of this compound, Component B: an amine compound having a boiling point of not higher than 250&#xb0; C. at 0.1 to 500 mol; and Component C-1: an organic acid having pKa of not more than 4 at 0.01 to 20 mol, and/or Component C-2: an organic copper compound composed of copper and an organic acid having pKa of not more than 4 at 0.01 to 100 mol. The composition is useful in the field of electronics.

Composition for forming copper pattern and method for forming copper pattern

Growing community of inventors

Suita, Japan

Masaya Nogi