Hitachi Chemical Company, Ltd.

Showa Denko Materials Co., Ltd.

Masaya Nishiyama

Masayuki Hanano

Haruaki Sakurai

Tomohiro Iwano

Masato Yoshida

Masao Suzuki

Teiichi Inada

Satoyuki Nomura

Masato Fukasawa

Takayuki Matsuzaki

Keiji Sumiya

Naoyuki Koyama

Masaaki Yasuda

Yasushi Shimada

Hiroyuki Kuriya

Michio Uruno

Keiichi Hatakeyama

Youichi Machii

Takeo Tomiyama

Makoto Mizutani

Tetsurou Iwakura

Kouji Mishima

Yuuko Tanaka

Masanobu Habiro

Yutaka Goh

Yasuhito Iwatsuki

Hirokazu Hiraoka

Yuuji Hasegawa

A polishing agent for polishing a resin comprises abrasive grains, a water-soluble polymer having an ether bond, an organic solvent and water, wherein the abrasive grains have a positive charge in the polishing agent and an average particle diameter of the abrasive grains is larger than 20 nm.

Polishing agent, stock solution for polishing agent, and polishing method

A polishing agent for chemomechanically polishing a base having a carbon-based material and an insulating material to remove at least a part of the carbon-based material, the carbon-based material having a carbon content of 60 to 95 atm % as measured by X-ray photoelectron spectroscopy, the polishing agent comprising: an abrasive grain comprising silica; an allylamine-based polymer; and water, wherein a mass ratio of a content of the allylamine-based polymer with respect to a content of the abrasive grain is 0.002 to 0.400, and the abrasive grain has a positive charge in the polishing agent.

Polishing agent, storage solution for polishing agent and polishing method

Provided is a polishing method that polishes a substrate having (1) silicon nitride as a stopper, and, on the stopper, (2) at least a portion of a wiring metal, and (3) at least a portion of an insulating material. The method includes a step of supplying a CMP slurry, and thereby polishing the (2) wiring metal and (3) insulating material. The CMP slurry contains (A) a copolymer of (a) a monomer that is anionic and does not contain a hydrophobic substituent and (b) a monomer containing a hydrophobic substituent; (B) an abrasive grain; (C) an acid; (D) an oxidizing agent; and (E) a liquid medium, the component (B) has a zeta potential of +10 mV or more in the CMP slurry, and the copolymerization ratio (a):(b) of the component (A) is 25:75 to 75:25 as a molar ratio, with the pH being 5.0 or less.

Polishing method

In CMP technology for planarizing an interlayer insulation film, a BPSG film, an insulation film for shallow trench isolation, or the like, in the production process of a semiconductor element, irregularities of a matter being polished, e.g. a silicon oxide film, are planarized efficiently at a high speed while suppressing the occurrence of polishing flaws on the substrate by employing a polishing pad having organic fibers exposed on the surface thereof abutting against the matter being polished.

Polishing pad for CMP, method for polishing substrate using it and method for producing polishing pad for CMP

There are disclosed an adhesive composition comprising: (a) an epoxy resin, (b) a curing agent and (c) a polymer compound with a weight average molecular weight of 100,000 or more, wherein a ratio of A/B exceeds 1 and is 10 or less, where A represents the total weight of (a) the epoxy resin and (b) the curing agent and B represents a weight of (c) the polymer compound; an adhesive composition, whose compositions are separated into a sea phase and an island phase, when viewed at a section in a cured state, and a ratio X/Y is in a range of 0.1 to 1.0, where X is an area of the sea phase and Y is an area of the island phase; a process for producing said adhesive composition; an adhesive film wherein said adhesive composition is formed into a film form; an adhesive film for bonding a semiconductor chip and a wiring board for mounting a semiconductor or for bonding semiconductor chips themselves, wherein the adhesive film can perform bonding by heat-pressing with a pressure of 0.01 to 0.5 MPa; a wiring board for mounting a semiconductor equipped with said adhesive film on a surface for mounting a semiconductor chip; and a semiconductor device using said adhesive film or said wiring board for mounting a semiconductor.

Adhesive composition, method for preparing the same, adhesive film using the same, substrate for carrying semiconductor and semiconductor device

A polishing slurry and a polishing method which are suitably used in a CMP technique for flattening a surface of a substrate in a production process of a semiconductor device. The polishing slurry comprises particles and a medium in which at least a part of the particles are dispersed, wherein the particles are made of at least one of (1) a cerium compound selected from cerium oxide, cerium halide and cerium sulfide and having a density of 3 to 6 g/cm and an average particle diameter of secondary particles of 1 to 300 nm and (2) a tetravalent metal hydroxide. A polishing method using the polishing slurry takes advantage of a chemical action of particles in the polishing slurry and minimizes a mechanical action of the particles, thereby achieving a decrease in scratches caused by the particles and an increase in polishing rate at the same time.

Polishing compound and method for polishing substrate

Growing community of inventors

Tokyo, Japan

Masaya Nishiyama