Kokusai Electric Corporation

Hitachi-kokusai Electric Inc.

Masaya Nishida

Kazuhiro Harada

Masayoshi Minami

Shintaro Kogura

Akihito Yoshino

Shogo Otani

Naoko Kitagawa

Masaaki Ueno

Tetsuya Kosugi

Ryota Sasajima

Kiyohiko Maeda

Masashi Sugishita

Seiyo Nakashima

Akihiro Sato

Tomoyasu Miyashita

Nobuhito Shima

Yosuke Kuwata

Kenichi Maeda

Mamoru Oishi

Yuuji Urano

Yasuhiro Matsuda

The present disclosure provides a substrate processing apparatus, a substrate processing method, a semiconductor device manufacturing method, and a control program capable of controlling thickness uniformity of a film formed on a substrate. The substrate processing apparatus includes a process chamber into which a substrate is transferred; a heating device heating the substrate, transferred into the process chamber, from its periphery side; a cooling device cooling the substrate, transferred into the process chamber, from its periphery side; a process gas supply unit supplying a process gas into the process chamber; and a control unit controlling the heating device and the cooling device to generate temperature difference between a center and the periphery sides of the substrate and controls the process gas supply unit. The control unit operates the process gas supply unit to stop operation of the cooling device during supply of the process gas into the process chamber.

Substrate processing apparatus, substrate processing method, semiconductor device manufacturing method, and control program

There is provided a technique that includes: (a) forming a film on a substrate in a process container by performing a cycle a predetermined number of times, the cycle including: supplying an oxygen-containing gas from a pipe made of metal to the substrate in the process container; supplying a nitrogen-and-hydrogen-containing gas from the pipe to the substrate in the process container; and (b) forming a layer on an inner surface of the pipe by supplying a surface treatment gas into the pipe such that the surface treatment gas chemically reacts with the inner surface of the pipe.

Method of manufacturing semiconductor device, surface treatment method, substrate processing apparatus, and recording medium

There is provided a technique that includes executing a process recipe for processing a substrate; and executing a correction recipe for checking a characteristic value of a supply valve installed at a process gas supply line, wherein the act of executing the correction recipe comprises: supplying an inert gas into the process gas supply line for a certain period of time in a state where an adjusting valve that is installed at an exhaust portion of a process furnace and adjusts an internal pressure of the process furnace is fully opened; detecting a pressure value in a supply pipe provided with the supply valve while supplying the inert gas into the process gas supply line in the state where the adjusting valve is fully opened; and calculating the characteristic value of the supply valve based on the detected pressure value.

Method of manufacturing semiconductor device, method of managing parts, and recording medium

There is provided a technique that includes: (a) forming a film on a substrate in a process container by performing a cycle a predetermined number of times, the cycle including: supplying a precursor gas from a first pipe made of metal and a first nozzle to the substrate in the process container; supplying an oxygen-containing gas from a second pipe made of metal and a second nozzle to the substrate in the process container; and supplying a nitrogen-and-hydrogen-containing gas from the second pipe and the second nozzle to the substrate in the process container; and (b) forming a continuous fluorine-containing layer on an inner surface of the second pipe by supplying a fluorine-containing gas into the second pipe such that the fluorine-containing gas chemically reacts with the inner surface of the second pipe.

A substrate processing apparatus includes: a placement part whereon a substrate container is placed; a substrate retainer supporting the substrate; transfer mechanisms configured to transfer the substrate between the substrate container and the substrate retainer and to perform a transfer operation; a detector provided at one or more of the transfer mechanisms to detect vibration; a memory device that registers, in advance, natural frequencies of the substrate and one or more of the transfer mechanisms and threshold values of the substrate and the plurality of transfer mechanisms; and a monitoring part to monitor whether an intensity of the vibration, based on transformed data obtained by transforming detection data, exceeds at least one of the threshold values of the substrate and the plurality of transfer mechanisms and whether a vibration frequency is equal to at least one of the natural frequencies of the substrate and the plurality of transfer mechanisms.

Substrate processing apparatus, vibration detection system and non-transitory computer-readable recording medium

The present invention provides technology capable of suppressing a deposition of by-products in a substrate processing apparatus. When a process gas is supplied into a process vessel, an inert gas having a flow rate controlled by a flow rate controller is supplied to a first and second supply pipes through a third supply pipe, the inert gas of the first supply pipe is ejected into the process vessel by a first ejection part and the inert gas of the second supply pipe is ejected toward an inner wall surface by a second ejection part.

Substrate processing apparatus

Growing community of inventors

Toyama, Japan

Masaya Nishida