Aisin Seiki Kabushiki Kaisha

Masaya Nagai

Hideyuki Ohtake

Koichiro Tanaka

Makoto Yoshida

Yuzuru Uehara

Junpei Yamashita

Toshiharu Sugiura

Kumiko Yamashita

Toshiaki Bessho

Yutaka Kadoya

Yuki Ichikawa

Hideyuki Int PropDept Aisin Seiki KK Ohtake

Toshiharu IntPropDept Aisin Seiki KK Sugiura

Toshiaki Aisin Engineering Co Ltd Bessho

A terahertz wave generation device is provided with an ultra-short pulse laser light source () for generating ultra-short pulse laser light at a single repeating frequency and optical fibers (Fto F) for respective transmitting and projecting of the ultra-short pulse laser light to an LN crystal (). Projection units () of the optical fibers (Fto F) are made parallel to irradiate the ultra-short pulse laser light (L) projected from the projection units (), respectively, on terahertz transmission line (A) in the LN crystal () with sequential delays. The optical lengths of the transmission paths of the optical fibers (Fto F) are set longer as the transmission paths go closer to one side of the parallel direction of the projection units ().

Terahertz wave generation device and method for generating terahertz wave

A reflection-type terahertz spectrometer includes an input optical path through which terahertz waves are propagated, an irradiating mechanism that irradiates a sample with terahertz waves propagated through the input optical path, an output optical path through which terahertz waves exiting from the irradiating mechanism are propagated, and a detector that receives and detects the terahertz waves propagated through the output optical path. The irradiating mechanism has at least one planar interface and a refractive index greater than that of a peripheral region contacting the planar interface and is disposed between the input optical path and the output optical path such that the terahertz waves propagated through the input optical path to be incident on the planar interface undergo total internal reflection at the planar interface, and the sample is disposed in the peripheral region contacting the planar interface of the irradiating mechanism. When the terahertz waves undergo the total internal reflection at the planar interface, the sample is irradiated with evanescent waves scattering from the planar interface to the peripheral region contacting the planar interface, so as to measure a spectrum.

Reflection type terahertz spectrometer and spectrometric method

A method for measuring a spectrum of a terahertz pulse includes generating a terahertz pulse using an ultrashort pulsed pumping light, generating a white light pulse using an ultrashort pulsed probe light, stretching and chirping the white light pulse modulating the chirped white light pulse such that the terahertz pulse and the chirped white light pulse irradiate into an electro-optic crystal synchronously, so that the chirped white light pulse is modulated by an electric field signal induced at the electro-optic crystal irradiated by the terahertz pulse, detecting a spectrum of chirped white light pulse modulated at the electro-optic modulating step by a multi-channeled detector, analyzing an electric field of the teraherz pulse irradiated to the electro-optic crystal from the spectrum of the chirped white light pulse detected by the multi-channeled spectrum detecting step, and transforming the analyzed electric field signal into a frequency spectrum of the terahertz pulse.

Multi-channeled measuring method and apparatus for measuring spectrum of terahertz pulse

A terahertz wave-generating semiconductor crystal includes a zincblende-type III-V compound semiconductor crystal that generates terahertz wave pulses upon application of an ultrashort light pulse in the optical communication band serving as a pump beam.

Semiconductor crystal for generating terahertz waves, terahertz wave-generator incorporating the crystal, semiconductor crystal for detecting terahertz waves, and terahertz waves detector incorporating the crystal

Growing community of inventors

Kyoto, Japan

Masaya Nagai