Matsushita Electric Industrial Co., Ltd.

Matsushita Electronics Corporation

Masaya Mannou

Isao Kidoguchi

Kiyoshi Ohnaka

Hideto Adachi

Satoshi Kamiyama

Takeshi Uenoyama

Akihiko Ishibashi

Toshikazu Onishi

Akira Takamori

Toshiya Fukuhisa

Kiyoshi Onaka

A semiconductor laser device is provided that includes a first conductivity type semiconductor substrate, a first conductivity type cladding layer provided on the semiconductor substrate and an active layer provided on the cladding layer. The active layer has a super-lattice structure including a disordered region in a vicinity of a cavity end face. A first cladding layer of a second conductivity type is provided on the active layer, an etching stop layer of the second conductivity type is provided on the first cladding layer and a second cladding layer of the second conductivity type is provided on the etching stop layer. The second cladding layer forms a ridge structure that extends along a cavity length direction. An impurity concentration in the etching stop layer in the vicinity of the cavity end face is equal to or smaller than about 2&#xd7;10cm.

Semiconductor device and method for producing the same

A semiconductor laser device including: a semiconductor substrate of a first conductivity type; a cladding layer of the first conductivity type provided on the semiconductor substrate; an active layer provided on the cladding layer of the first conductivity type, the active layer having a super-lattice structure including a disordered region in a vicinity of at least one cavity end face; a first cladding layer of a second conductivity type provided on the active layer; an etching stop layer of the second conductivity type provided on the first cladding layer; and a second cladding layer of the second conductivity type provided on the etching stop layer, the second cladding layer forming a ridge structure, the ridge structure extending along a cavity length direction and having a predetermined width. A concentration of an impurity in the etching stop layer in the vicinity of the at least one cavity end face is greater than a concentration of the impurity in the interior of a cavity and equal to or smaller than about 2&times;10 cm .

A method for producing a semiconductor laser element includes steps of: forming a semiconductor layered structure on a first conductivity type semiconductor substrate, the semiconductor layered structure including a first conductivity type cladding layer, a quantum well active layer, and a first cladding layer of a second conductivity type; forming a diffusion control layer in a predetermined region on the semiconductor layered structure; forming a material layer which acts as an impurity source on the diffusion control layer; and diffusing impurities by a first thermal treatment from the material layer through the diffusion control layer into at least a part of the semiconductor layered structure including at least a part of the quantum well active layer, thereby forming an impurity diffusion region, wherein a part of the quantum well active layer in at least one cavity end face is disordered by diffusion of the impurities.

Semiconductor laser device and method for producing the same

A semiconductor laser device having an active layer, a pair of cladding layers interposing the active layer and a multi-quantum barrier provided between one of the pair of cladding layers and the active layer is provided, and the multi-quantum barrier includes barrier layers and well layers being alternated with each other. The semiconductor laser device also including an optical guide layer confining light generated in a quantum well layer, and the optical guide layer being undoped.

Semiconductor laser device with an optical guide layer

A semiconductor laser device having an active layer, a pair of cladding layers interposing the active layer and a multi-quantum barrier provided between one of the pair of cladding layers and the active layer is provided. The multi-quantum barrier includes barrier layers and well layers being alternated with each other. Thickness, energy band gap, or impurity concentration of at least one of the barrier layers and well layers in the multi-quantum barrier changes with the distance from the active layer, thereby providing a stable function of reflecting carriers overflowing from the active layer back to the active layer.

Semiconductor laser device

A semiconductor laser of the invention includes a (100) GaAs substrate having at least one stripe groove formed on an upper face thereof, and a semiconductor multilayer structure formed on the substrate. The stripe groove extends along a &lt;1-10&gt; direction. The semiconductor multilayer structure includes an Al.sub.x Ga.sub.1-x As layer (0.ltoreq.x.ltoreq.1) including a portion having a surface of an (all) crystal plane (a&gt;1), the portion being positioned on the stripe groove, a pair of AlGaInP cladding layers provided on the Al.sub.x Ga.sub.1-x As layer (0.ltoreq.x.ltoreq.1), and an active layer sandwiched between the pair of AlGaInP cladding layers.

Semiconductor laser and method for fabricating the same

A semiconductor laser of the invention includes a (100) GaAs substrate having at least one stripe groove formed on an upper face thereof, and a semiconductor multilayer structure formed on the substrate. The stripe groove extends along a &lt;1-10&gt; direction. The semiconductor multilayer structure includes an Al.sub.x Ga.sub.1-x As layer (0.ltoreq.x.ltoreq.1) including a portion having a surface of an (a11) crystal plane (a&gt;1), the portion being positioned on the stripe groove, a pair of AlGaInP cladding layers provided on the Al.sub.x Ga.sub.1-x As layer (0.ltoreq.x.ltoreq.1), and an active layer sandwiched between the pair of AlGaInP cladding layers.

Semiconductor laser having a flat groove for selected crystal planes

When an n-type semiconductor layer is formed on a p-type semiconductor layer in a device such as a semiconductor multi-layer film, the n-type semiconductor layer is formed by adding a p-type dopant as well as an n-type dopant simultaneously. In a double heterostructure semiconductor laser including an AlGaInP active layer and AlGaInP cladding layers, when an n-type current blocking layer is formed on the p-type cladding layer, the n-type current blocking layer is formed by adding a p-type dopant as well as an n-type dopant simultaneously.

Growing community of inventors

Hirakata, Japan

Masaya Mannou