Matsushita Electric Industrial Co., Ltd.

Panasonic Corporation

Masaya Mannoh

Toshiya Fukuhisa

Isao Kidoguchi

Hideto Adachi

Satoshi Kamiyama

Akira Takamori

Kiyoshi Ohnaka

Takeshi Uenoyama

Akihiko Ishibashi

Masakatsu Suzuki

Yasuhito Kumabuchi

Masaaki Yuri

Masahiro Ishida

Masahiro Ogawa

Yoshihiro Mori

Tsutomu Ukai

Hidetoshi Furukawa

Yoshiyuki Matsuki

In a constitution where a first clad layer is formed on a semiconductor substrate, an active layer having the strained multiple quantum well structure is formed on the first clad layer, and a second clad layer is formed on the active layer, the sum of products of strain amounts and film thickness in the active layer is set to a negative value.

Semiconductor laser device

A semiconductor laser device in which a red semiconductor laser device and an infrared semiconductor laser device are located on a single substrate, and an end-face window structure is formed simultaneously. The hydrogen concentration (1.5ecm) of a fourth clad layer () of the infrared semiconductor laser device is higher than the hydrogen concentration (1ecm) of a second clad layer () of the red semiconductor laser device which is a first semiconductor laser device, whereby an active layer of the infrared semiconductor laser device can be sufficiently disordered in the semiconductor laser device.

Semiconductor laser device and method of manufacturing the same

A semiconductor laser device includes: a first light emitting device, the first light emitting device including a first first-conductive-type cladding layer, a first active layer having a first window region in the vicinity of a light emitting edge surface and a first second-conductive-type cladding layer stacked in this order on a substrate; and a second light emitting device, the second light emitting device including a second first-conductive-type cladding layer, a second active layer having a second window region in the vicinity of a light emitting edge surface and a second second-conductive-type cladding layer stacked in this order on the substrate. In the semiconductor laser device, respective lattice constants of the first second-conductive-type and second second-conductive-type cladding layers are adjusted to compensate for a difference in diffusion rate of an impurity between the first window region in the first active layer and the second window region in the second active layer.

Semiconductor laser device and method for fabricating the same

The semiconductor laser of this invention includes an active layer formed in a c-axis direction, wherein the active layer is made of a hexagonal-system compound semiconductor, and anisotropic strain is generated in a c plane of the active layer.

Semiconductor light emitting element and method for fabricating the same

A semiconductor substrate comprises a semiconductor layer comprising a group III nitride as a main component. A scattering portion for scattering an incident beam of light incident on one plane of the semiconductor layer is provided on another plane or inside of the semiconductor layer.

Semiconductor substrate, method of manufacturing the semiconductor substrate, semiconductor device and pattern forming method

An n-type GaAs buffer layer an n-type AlGaInP cladding layer a multiple quantum well active layer made of AlGaInP and GaInP, a first p-type AlGaInP cladding layer an optical guide layer a second p-type cladding layer a p-type GaInP saturable absorption layer and a third p-type AlGaInP cladding layer are sequentially formed on an n-type GaAs substrate In this structure, the volume of the saturable absorption layer is reduced, and the optical guide layer is provided. As the volume of the saturable absorption layer becomes smaller, the more easily the carrier density can be increased, the more easily the saturated state can be attained, and the more remarkable the saturable absorption effect becomes. Thus, a semiconductor laser having stable self-oscillation characteristics and, as a result, having a low relative noise intensity is realized.

Semiconductor laser and optical disk device using the laser

An n-type GaAs buffer layer,an n-type AlGaInP cladding layer,a multiple quantum well active layer,made of AlGaInP and GaInP, a first p-type AlGaInP cladding layer,an optical guide layer,a second p-type cladding layer,a p-type GaInP saturable absorption layer,and a third p-type AlGaInP cladding layer,are sequentially formed on an n-type GaAs substrate,In this structure, the volume of the saturable absorption layer is reduced, and the optical guide layer is provided. As the volume of the saturable absorption layer becomes smaller, the more easily the carrier density can be increased, the more easily the saturated state can be attained, and the more remarkable the saturable absorption effect becomes. Thus, a semiconductor laser having stable self-oscillation characteristics and, as a result, having a low relative noise intensity is realized.

In a semiconductor laser including an active layer and a buried layer for absorbing laser light emitted from the active layer, an oscillation wavelength of the laser light is in a 650 nm band, an oscillation mode is a single transverse mode, and a peak of a light intensity distribution of the laser light is placed on the side opposite to the buried layer with respect to the center of the active layer.

Semiconductor laser

A semiconductor laser device of the present invention includes a substrate 201 made of n-type GaAs, an active layer 204, and a pair of cladding layers sandwiching the active layer 204. The device further includes a spacer layer 205 adjacent to the active layer 204 and a highly doped saturable absorbing layer 206. The carrier life time is shortened by doping the saturable absorbing layer 206 in a high concentration, whereby stable self-sustained pulsation can be obtained. As a result, a semiconductor laser device can be obtained, which has a low relative noise intensity in a wide range of temperatures.

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Nara, Japan

Masaya Mannoh