Fujitsu Corporation

Fujitsu Semiconductor Limited

Fujitsu Vlsi Limited

Other

Fujitsu Limited & Fujitsu Vlsi Limited

Masaya Katayama

Taiji Ema

Hiroshi Nomura

Toshimi Ikeda

Masahiro Kuwamura

Motoo Nakano

Masayoshi Asano

Shinichiro Ikemasu

Fumihiko Inoue

Junichi Ishikawa

Narumi Ohkawa

Takaaki Furuyama

Shozo Kawabata

Masaki Ito

Tatsumi Tsutsui

Satoru Miyoshi

Kenichi Kanazawa

Manabu Hayashi

Shigetoshi Takeda

Michiari Kawano

Masaaki Higashitani

Noriyuki Suzuki

Seiichi Suzuki

Kenichi Kawabata

Junichi Yayanagi

Masahiro Chijiiwa

Osamu Hideshima

Kazuhiro Adachi

Masaya Ohtsuki

A semiconductor device includes a p-type semiconductor substrate, an n-type drift region formed in the p-type semiconductor substrate, and a p-type body region formed in the n-type drift region. A circular gate electrode is formed over a pn junction between sides of the p-type body region and the n-type drift region along the pn junction. An n-type drain region and an n-type source region are formed in the n-type drift region and the p-type body region, respectively, with a part of the gate electrode between.

Semiconductor device

A semiconductor device includes a semiconductor substrate having at least one surface provided with a semiconductor element, wherein the semiconductor substrate includes a region of a first conductivity type, the region being formed in a surface layer portion of the semiconductor substrate; a first diffusion region of a second conductivity type, the first diffusion region having a first impurity concentration and being formed in the surface layer portion, and a pn junction being formed between the first diffusion region and the region of the first conductivity type; and a first metal silicide film formed on part of a portion of the surface corresponding to the first diffusion region.

Semiconductor device and method for producing same

A photodiode formed over a silicon substrate is disclosed. The photodiode includes a light-receiving region formed of a diffusion region of a first conduction type at the surface of the silicon substrate and forming a pn junction; an intermediate region formed of a diffusion region of the first conduction type at the surface of the silicon substrate so as to be included in the light-receiving region; a contact region formed of a diffusion region of the first conduction type at the surface of the silicon substrate so as to be included in the intermediate region; a shield layer formed of a diffusion region of a second conduction type in a part of the surface of the silicon substrate outside the intermediate region; and an electrode in contact with the contact region. The shield layer faces the side end part of the diffusion region forming the intermediate region.

Photodiode, solid slate image sensor, and method of manufacturing the same

The semiconductor device comprises a first wellof a first conduction type formed in a semiconductor substrate; a second wellof a second conduction type formed in the first well; and a transistorincluding a control gateformed of an impurity region of the first conduction type formed in the second well, a first impurity diffused layerand a second impurity diffused layerformed with a channel regiontherebetween, and a floating gate electrodeformed on the channel regionand the control gatewith a gate insulation filmtherebetween. The control gateis buried in the semiconductor substrate, which makes it unnecessary to form the control gateon the floating gate electrode. Thus, the memory transistor and the other transistors, etc. can be formed by the same fabricating process. Thus, the fabrication processes can be less and the semiconductor device can be inexpensive.

Method for fabricating a semiconductor device

A semiconductor device includes a first n-type source/drain regionand a second p-type source/drain regionformed on a semiconductor substrateaway from side surfaces of first and second gate electrodesat a first interval Wrespectively, a second n-type source/drain regionand a first p-type source/drain regionformed on the semiconductor substrateaway from side surfaces of third and fourth gate electrodesat a second interval W, which is wider than the first interval W, respectively, and third and fourth insulating sidewallsextended onto source/drain extensionson both sides of third and fourth gate electrodesfrom edges of upper surfaces of the third and fourth gate electrodesrespectively.

Semiconductor device and method of manufacturing the same

The solid-state image sensor includes a pixel part, an analog circuit part, a digital circuit partand an input/output circuit part. The digital circuit partincludes a first wellof a second conduction type formed in a second region of a semiconductor substrateof a first conduction type surrounding a first region thereof; a first buried diffused layerof the second conduction type buried in the first region: a second wellof the first conduction type formed near a surface of the semiconductor substratein the first region; and a first transistorformed on the second well

Solid-state image sensor

Semiconductor device comprising transistors having control gates and floating gate electrodes

In a semiconductor device having a fuse and an etching stopper film covering the fuse, an optical window exposing the etching stopper film and a contact hole exposing a conductor pattern are formed simultaneously. By applying a dry etching process further to the etching stopper film, an insulation film covering the fuse is exposed in the optical window.

Semiconductor device having a fuse and a fabrication method thereof

Wells of n- and p-type are formed in a p-type substrate. Wells of p-type are also formed in the n-type well. Both the p-type wells are formed by the same process at the same time to make MOS transistors have different threshold voltages. MOS transistors having a long gate length and a low threshold voltage are formed in the p-well in the n-well, and MOS transistors having a short gate length and a high threshold voltage are formed in the p-well at the outside of the n-well. Fuses are formed over the p-type wells in the n-type well at a high density.

Method of manufacturing semiconductor device

Microstructures, including a plurality of spaced structural members which are bendable under an external force, undergo a treating method using a first treating liquid, to prevent permanent deformation, by removing the microstructure from the first treating liquid to an environment having a pressure less than atmospheric pressure; or moving the microstructure from the first treating liquid to a second treating liquid having a smaller surface tension than the first treating liquid, and then removing the microstructure from the second liquid; or drying the microstructure removed from the first treating liquid by exposing same to a liquid vapor having a smaller surface tension than the first treating liquid; or removing the microstructure from the first treating liquid to the atmosphere, and drying the microstructure using an energy beam of high intensity or an ultrasonic wave.

Method of liquid treatment of microstructures comprising bendable structural members

A method of producing a semiconductor device includes the steps of (a) preparing a substrate having a semiconductor element formed in a predetermined region of a surface of the substrate, (b) forming a first layer on the substrate, where the first layer is made of silicon oxide including at least one of boron and phosphor, (c) forming a second layer on a surface of the first layer, where the second layer is made of a material selected from a group consisting of silicon nitride and silicon oxide nitride, (d) coating a resist layer on the entire surface of the substrate, (e) exposing and developing a predetermined region of the resist layer using a reticle having a first opening so as to form a second opening in the resist layer, where the first opening has a polygonal shape having n corners respectively having obtuse angles and n is a natural number satisfying n.gtoreq.5, and (f) etching the second and first layers via the second opening.

Semiconductor device and method of producing the same

A micro-structure including at least a first bendable member having first and second ends and being supported at the first end only, and either being spaced from a rigid component, or being spaced from a second bendable member also supported only at a first end thereof. The first member has a length L from the first end to the second end specified by one of the following equations: (a) for the first member adjacent to the rigid component: L&lt;(2Edt.sup.3 /3P).sup.1/4, wherein E is a Young's modulus of a material of the first member; d is a distance of the space between the first member and the rigid component; t is a thickness of the first member; and P is an external pressure applied to the first member; or b) for the first member adjacent to the second member: L&lt;(2Ed't.sup.3 /3P).sup.1/4, wherein E, t and P are as defined above; and d' is a distance of the space between the first and second members.

Micro-structures having structural members capable of withstanding

Growing community of inventors

Kawasaki, Japan

Masaya Katayama