Semiconductor Energy Laboratory Co., Ltd.

Masaya Kadono

Shunpei Yamazaki

Hidehito Kitakado

Yukio Yamauchi

Kenji Itoh

Naoki Hirose

Noriya Ishida

Toru Takayama

Yasuyuki Arai

Akiharu Miyanaga

Shigenori Hayashi

Rimantas Vaitkus

Takashi Inushima

Tohru Inoue

Junichi Takeyama

Mari Sasaki

Kenji Itou

Masahiro Kojima

A reduction in contaminating impurities in a TFT, and a TFT which is reliable, is obtained in a semiconductor device which uses the TFT. By removing contaminating impurities residing in a film interface of the TFT using a solution containing fluorine, a reliable TFT can be obtained.

Semiconductor device and a method of manufacturing the same

Semiconductor device including light-emitting element

Method for manufacturing semiconductor device

Method of manufacturing active matrix display device

Method of manufacturing a semiconductor device

To provide a flow rate sensor of minimized power consumption. Form a Fe pattern 104 and Pt pattern 103 on the surface of a diamond thin film 101 by sputtering or evaporation to construct a thermo-electromotive element. Also, form a heating unit 102. On pulsewise heating from the heating unit 102, the temperature of the junction portions 109 becomes higher than that of the junction portions 110 and an output from the thermo-electromotive element is obtained as thermo-electromotive force between the electrodes 107 and 108. This output indicates a response characteristic reflecting the thermal effect exerted from the environment on the diamond thin film. From this output, for example, the flow rate of a fluid flowing in contact with the diamond thin film 101 can be obtained.

Measuring device utilizing a thermo-electromotive element

Method of fabricating a device made of a thin diamond film having a thickness of less than 10 .mu.m which is difficult to handle. The method is initiated by forming a thin diamond film on a silicon substrate to a thickness of about 5 .mu.m by chemical vapor deposition. Then, paraffin is applied. The substrate is removed with hydrofluoric acid. Thus, the diamond film is retained on the paraffin that is made to act as a base. A required circuit is formed on the surface of the diamond film. Finally, the paraffin is removed. In this way, a device using the diamond film is completed. This structure can be used as a device for measuring thermal effect, using a thin diamond film. For example, the structure can be used for fabrication of a flowsensor.

Method of fabricating device made of thin diamond foil

A microwave-assisted plasma processing apparatus has a reaction chamber in which a substrate holder is provided to support a substrate to be treated. The holder is formed congruent with the inside of reaction chamber and located to substantially separate a reaction space in the reaction chamber save for a narrow clearance therebetween through which exhausted gas passes from said reaction space into said auxiliary space. By this structure, high density plasmas can be formed in the reaction chamber without substantial loss of input microwave energy.

Apparatus for microwave processing in a magnetic field

A method of depositing high quality diamond films and a light emitting device are described. The deposition is carried out in a reaction chamber. After disposing a substrate to be coated in the chamber, a carbon compound gas including a C--OH bond is introduced together with hydrogen thereinto. Then, deposition of diamond takes place in a magnetic field by inputting microwave energy. The present invention is particularly characterized in that the volume ratio of the carbon compound to hydrogen introduced into the reaction chamber is 0.4 to 2; the pressure in said reaction chamber is 0.01 to 3 Torr; the temperature of the substrate is kept between 200.degree. to 1000.degree. C. during deposition; and the input energy of the microwave is no lower than 2 KW. By this method, uniform and high quality diamond films can be formed.

Method of depositing diamond and diamond light emitting device

A CVD method for forming a diamond or diamond containing carbon film comprises the step of inputting a reactive gas, supplying energy to the reactive gas, and depositing the carbon film on a substrate. The reactive gas includes a carbon compound material which has a diamond structure in its molecular structure. The representative material is adamantane. Oxygen or hydroxyl group is also added in order to improve the crystallinity of the deposited carbon film.

Method of forming diamond or diamond containing carbon film

An industrial diamond thin film coating on an object and a method of manufacturing the same are described. A diamond film is first formed on a substrate other than the object to be coated. The diamond film is then joined to the object by means of an adhesive. Finally, the substrate may be removed from the diamond film which is already fixed to the object to provide a hard surface for the same.

Industrial diamond coating and method of manufacturing

A process for fabricating diamond from a starting powder material containing carbon as the principal component, and said process comprising bringing said powder material under high pressure, wherein, said powder material containing carbon as the principal component is a powder material containing C.sub.60 and/or carbon microtubules as the principal component, and

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Kanagawa, Japan

Masaya Kadono