Panasonic Intellectual Property Management Co., Ltd.

Masaya Hirade

Yuko Kishimoto

Manabu Nakata

Hiroaki Iijima

Yasunori Inoue

Katsuya Nozawa

Katsuyuki Shizu

Hironori Kaji

Katsuaki Suzuki

Shinji Tanaka

Taniyuki Furuyama

An imaging device includes pixels. Each of the pixels includes a first electrode, a second electrode, a photoelectric conversion layer that is located between the first electrode and the second electrode, that contains a donor semiconductor material and an acceptor semiconductor material, and that generates a pair of an electron and a hole, a first charge blocking layer located between the first electrode and the photoelectric conversion layer, a second charge blocking layer located between the second electrode and the photoelectric conversion layer, and a charge storage region that is electrically connected to the second electrode and that stores the hole. The difference between the electron affinity of the acceptor semiconductor material and the electron affinity of the first charge blocking layer is larger than the difference between the ionization potential of the donor semiconductor material and the ionization potential of the second charge blocking layer.

Imaging device

A composition contains a naphthalocyanine derivative represented by the following formula: where Rto Rare independently an alkyl group and Rto Rare independently an aryl group, and at least one hydrogen atom in at least one selected from the group consisting of R, R, R, and Ris substituted by an electron-withdrawing group.

Composition, photoelectric conversion element, and imaging device

An imaging apparatus includes a semiconductor substrate; a first electrode; a second electrode; a photoelectric conversion layer disposed between the first electrode and the second electrode, and including a donor organic semiconductor material and an acceptor organic semiconductor material; a charge accumulation node positioned within the semiconductor substrate and electrically connected to the second electrode; and a first blocking layer disposed between the first electrode and the photoelectric conversion layer. The photoelectric conversion layer has an ionization potential of lower than or equal to 5.3 eV. The first blocking layer has an electron affinity lower than an electron affinity of the acceptor organic semiconductor material included in the photoelectric conversion layer. The imaging apparatus has spectral sensitivity in a near-infrared light region having wavelengths of greater than or equal to 650 nm and less than or equal to 3000 nm.

Imaging apparatus including organic photoelectric conversion layer and hole blocking layer

A camera system includes a light source having a peak emission wavelength at room temperature in a near-infrared region, and an imaging device including a photoelectric conversion element that converts near-infrared light into an electric charge. An external quantum efficiency of the photoelectric conversion element has a first peak at a first wavelength longer than the peak emission wavelength, and the external quantum efficiency at the first wavelength is higher than the external quantum efficiency at the peak emission wavelength.

Camera system

A method for manufacturing a photoelectric conversion element includes providing a base structure including a semiconductor substrate having a principal surface, a first electrode located on or above the principal surface, second electrodes which are located on or above the principal surface and which are one- or two-dimensionally arranged, and a photoelectric conversion film covering at least the second electrodes; forming a mask layer on the photoelectric conversion film, the mask layer being conductive and including a covering section covering a portion of the photoelectric conversion film that overlaps the second electrodes in plan view; and partially removing the photoelectric conversion film by immersing the base structure and the mask layer in an etchant.

Photoelectric conversion element including first electrode, second electrodes, photoelectric conversion film, and conductive layer and method for manufacturing the same

A composition contains a phthalocyanine derivative represented by the following formula: where Rto Rare independently an alkyl group, M is Si, each of Rand Ris any one of substituents represented by the following formulas, Rto Rare independently an alkyl group, and Rto Rare independently an alkyl group or an aryl group: 

A photoelectric conversion material includes a compound represented by Formula (1): where, X is selected from the group consisting of a hydrogen atom, a deuterium atom, a halogen atom, an alkyl group, and a cyano group; and Y represents a monovalent substituent represented by Formula (2): where, Rto Reach independently represent a hydrogen atom, a deuterium atom, a halogen atom, an alkyl group, or an aryl group; or two or more of Rto Rbond to each other to form one or more rings, and the remainders each independently represent a hydrogen atom, a deuterium atom, a halogen atom, an alkyl group, or an aryl group; * denotes the binding site of Y in Formula (1); and Aris selected from the group consisting of structures represented by Formulae (3): where ** denotes a binding site of Arwith N in Formula (2).

Photoelectric conversion material containing organic semiconductor material, and photoelectric conversion element

A composition contains a compound represented by the following formula: where M represents either of Si and Sn, Rto Reach independently represent an alkyl group containing three or less carbon atoms, and Rto Reach independently represent an alkyl group.

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Osaka, Japan

Masaya Hirade