Sharp Kabushiki Kaisha Corporation

Sharp Corporation

Emi, LLC

501 Sharp Kabushiki Kaisha

Masaya Hijikigawa

Hisatoshi Furubayashi

Takashi Sugihara

Masanori Watanabe

Shuji Miyoshi

Junichi Tanaka

Yasuhiko Inami

Hiroki Tabuchi

Kazutaka Uda

Akihito Jinda

Shoei Kataoka

Masayuki Katagiri

Shuhei Tsuchimoto

Hitoshi Sannomiya

Hisashi Akiyama

Yoshihiro Yamamoto

Brian C Webb

Nobuyuki Tanaka

Derek G Pedley

Stephen J Prosser

Tetsuhiro Okuno

Syuichi Kouzaki

Masanori Watanaba

In a display device that displays by allowing external light to be incident from outside, and reflecting the incident external light so as to output the incident external light from a display surface, a porous body having a front face that is provided on the display surface side is used. Moreover, a colorless and transparent material is used for this porous body, an one-end opening is formed on the front face side in the porous body, and plural small pores that are independent of one another are provided inside the porous body.

Display device and electrical apparatus using the same

A method of making a humidity sensor comprises providing a host device constituted by a semi-conductor substrate (10) and a gate insulator (13) of an insulated gate field effect transistor, forming a layer (14) of poly (vinyl) alcohol (PVA) on the exposed surface of the insulator, heat treating the layer to crystallize and stabilize the PVA, and forming a gate electrode (15) on the PVA layer, so that the gate electrode is porous allowing ambient water vapor to be absorbed by the PVA which, in response, undergoes a change of bulk dielectric constant, thereby causing a change in gate capacitance of the transistor resulting in a detectable change of electrical conductivity in the drain source channel.

Humidity sensor

A sensor having a pair of sensor units, one of which is a detecting sensor unit and the other of which is a reference sensor unit, wherein each of the units comprises a substrate with a hollow portion, a thin insulating layer with a bridge, cantilever or diaphragm shape disposed on the substrate, a sensitive film disposed on the bridge, cantilever or diaphragm portion of the thin insulating layer, and a pair of electrodes being in contact with the sensitive film, the sensitive film section of the detecting sensor unit being exposed to an atmosphere to be measured so that the electrical resistance of the sensitive film changes with a variation in the physical quantity of the atmosphere to be detected, and the sensitive film section of the reference sensor unit being sealed within a shielding container so that the electrical resistance of the sensitive film is not influenced by a variation in the physical quantity of the atmosphere outside of the container, whereby the absolute physical quantity of the atmosphere to be detected is determined by the output power of the sensor based on a difference between the electrical resistance of the detecting sensor unit and the electrical resistance of the reference sensor unit.

Sensor

A moisture sensitive resistive element includes a substrate made of an electrically non-conductive material, first and second electrodes deposited on the substrate in a spaced relation to each other, and a moisture sensitive film deposited on the substrate covering both the first and second electrodes. The moisture sensitive film is formed by a material given by a formula: [--CH(C.sub.6 H.sub.4 SO.sub.3 X)--CH.sub.2 --].sub.n wherein X is any one of a hydrogen atom, metal atom, ammonium, urea, triethylenediamine, tetramethyleneguanidine and hexamethylenediamine, or formed by a mixture of the above material with a hydrophilic polymer which is any one selected from a group consisting of polyvinyl alcohol, methyl cellulose and polyamide resin.

Moisture sensitive resistive element

A pressure sensor of the field-effect type includes a transistor having a gate insulation film above which a hollow chamber is provided, a gate electrode movable and deformable by pressure is formed above the gate insulation film through the hollow chamber, and an auxiliary gate electrode is provided on the boundary plane between the gate insulation film and hollow chamber, whereby the value of pressure can be detected by the drain-current variation of the transistor.

Field effect pressure sensor

A moisture sensitive material prepared by crosslinking cellulose acetate through at least one compound selected from the group consisting of compounds containing two or more isocyanate groups; compounds containing two or more epoxy groups; compounds containing two or more carboxyl groups ##STR1## and acid anhydrides of carboxylic acids.

Moisture sensitive material

A flow sensor for detecting the rate of flow and the direction of flow of a fluid, comprising a substrate, a heating element disposed on the substrate, and four or more fluid temperature sensing elements disposed with an equal space therebetween on a virtual circle around the heating element, wherein the difference in temperature between the fluid and the heating element is maintained at a fixed level by the control of current that is applied to the heating element, so that the flow rate of the fluid can be calculated from changes in the current that corresponds to the flow rate of the fluid, and at the same time, the difference in current or in potential between the fluid temperature sensing elements is calculated from changes in temperature therebetween that arise from changes in the direction of flow of the fluid, so that the direction of flow of the fluid can be detected.

Flow sensor

A variable interferometric device comprising a Fabry-Perot interferometer composed of a pair of reflecting substances facing each other with a space therebetween formed by spacers and a means for deforming at least one of the reflecting substances constituting said Fabry-Perot interferometer to thereby change the interferometric characteristics of said Fabry-Perot interferometer. Moreover, an optical sensor comprising a light source, a first Fabry-Perot interferometric device, the interferometric characteristics of which vary with the physical quantity of the object to be measured, a light-dividing means for dividing the light from the light source into a first light beam and a second light beam, a second Fabry-Perot interferometric device functioning as a reference standard, the operational conditions of which are set at fixed values, a first photodetector for receiving the first light beam from said light-dividing means through the second Fabry-Perot interferometric device, a second photodetector for receiving the second light beam from said light-dividing means through the second Fabry-Perot interferometric device, and a signal-processing circuit for comparing the output signal from the first photodetector with the output signal from the second photodetector to thereby determine the physical quantity of the object to be measured.

Variable interferometric device and a process for the production of the

A sensor having an electrode structure which comprises a lamination of at least two layers composed of a titanium layer bound to an insulating grounding layer and a nobel metal layer covering said titanium layer.

A method of manufacturing a resistance thermometer which includes the steps of preparing a support substrate and forming a platinum film, which serves as a temperature measuring element, on the support substrate by a sputtering process employing a sputtering gas which contains a predetermined amount of oxygen gas, and a resistance thermometer produced by the method. The method which optionally includes forming an aluminum oxide film, the substrate and the platinum film.

Method of manufacturing platinum resistance thermometer

A moisture sensitive material prepared by cross-linking cellulose acetate butyrate with at least one compound selected from the group consisting of compounds containing two or more isocyanate groups; copmpounds containing two or more epoxy groups; compounds containing two or more carboxyl groups; and acid anhydrides of carboxylic acids.

Moisture sensor containing cellulose acetate butyrate

A moisture sensitive material prepared by cross-linking cellulose acetate through at least one selected from the group consisting of compounds containing two or more isocyanate groups; compounds containing two or more epoxy groups; compounds containing two or more carboxyl groups ##STR1## and acid anhydrides of carboxylic acids.

Moisture sensor

A photoelastic element having reduced internal stress comprising a photoelastic material member; pedestal means; and a pair of supporting members integrally formed with the pedestal means for supporting the photoelastic material member, one of said pair of supporting members being adhered or bound to the photoelastic material member, and the other of said pair of supporting members being in contact with the photoelastic material member without being bound thereto.

Optical pressure sensor with pedestal mounted photoelastic element

A pressure sensor element includes a polymer optical conductor which includes a substrate, a first organic polymer film formed on the substrate, a second organic polymer film superposed on the first organic polymer film, and an optical reflecting film provided on a patterned end face of the first organic polymer film. The first organic polymer film portion within the pattern has a refractive index different from that of the substrate. The first organic polymer film portion outside the pattern has substantially the same refractive index as the substrate. The refractive index of the second organic polymer film is substantially the same as that of the first organic polymer film portion outside the pattern. At least either one of the refractive indexes of the first and second organic polymer films changes with pressure fluctuation.

Optical pressure sensor

An amorphous semiconductor device comprising a layered structure having a p-amorphous silicon layer, an i-amorphous silicon layer, an n-amorphous silicon layer, an i-amorphous silicon layer and a p-amorphous silicon layer, or an n-amorphous silicon layer, an i-amorphous silicon layer, a p-amorphous silicon layer, an i-amorphous silicon layer and an n-amorphous silicon layer, in sequence, on a substrate, electrodes being disposed on the top layer, the central layer and the bottom layer, respectively.

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Yamatokoriyama, Japan

Masaya Hijikigawa