National Institute of Advanced Industrial Science and Technology

Masatou Ishihara

Masataka Hasegawa

Yoshinori Koga

Sumio Iijima

Kazuo Tsugawa

Jaeho Kim

Takatoshi Yamada

A technique for forming graphene which solves problems involved in formation of graphene by a thermal CVD method and a resin carbonization method that a high temperature is used and the treatment time is long and can form graphene at a lower temperature in a shorter time is provided. The above problems are solved by performing hydrogen plasma treatment on a copper foil substrate having an organic substance applied thereon by use of a surface wave microwave plasma treatment device and forming graphene on the copper foil substrate by the hydrogen plasma treatment.

Method for producing graphene, and graphene

Small crystal size is the issue of a conventional method for formation of a film of graphene by a thermal CVD technique using a copper foil as a substrate. A carbon film laminate is described in which graphene having a larger crystal size is formed. The carbon film laminate is configured to include a sapphire single crystal having a surface composed of terrace surfaces which are flat at the atomic level, and atomic-layer steps, a copper single crystal thin film formed by epitaxial growth on the substrate, and graphene deposited on the copper single crystal thin film, and thus enabling formation of graphene having a large crystal size.

Carbon film laminate

The invention provides a laminate capable of polishing and grinding the surface of a material having a high hardness such as diamond, sapphire or hard carbon film, rapidly and in a simplified manner with high planarity and high accuracy, utilizing the high adhesiveness to substrates, the hardness and the surface planarity that a carbon film has, but using neither diamond abrasive grains nor alkali slurry. The laminate comprises a substrate and a carbon layer provided on the substrate, wherein the carbon layer comprises a diamond fine grain provided on the substrate and crushed by impact given thereto, a formation/growth inhibiting material that inhibits the formation of an impurity inhibiting the growth of a carbon grain and/or inhibits the growth of a carbon grain, and a carbon grain, and an amount (amount per unit volume) of the formation/growth inhibiting material decreases from a lower layer toward an upper layer on the substrate side. Preferably, the formation/growth inhibiting material is an SiOmaterial or an AlOmaterial, and optionally an adhesiveness-reinforcing layer comprising titanium or a titanium alloy or the like may be provided between the substrate and the carbon layer.

Laminate, and polishing material and grinding material using the same, and method for producing the laminate

Disclosed is a carbon film which has optical characteristics of retaining a high transparency and being high in refractive index and low in double refractivity, is excellent in electric insulating performance, can be applied to various base materials with good adhesiveness, and can be formed at low temperature. Also disclosed is a laminate including a carbon film and a method for producing the laminate.

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Ibaraki, Japan

Masatou Ishihara