Semiconductor Energy Laboratory Co., Ltd.

Sharp Kabushiki Kaisha Corporation

Masatoshi Yokoyama

Kenichi Okazaki

Shunpei Yamazaki

Shigeki Komori

Manabu Sato

Masayuki Sakakura

Yoshitaka Yamamoto

Takuya Matsuo

Shunsuke Koshioka

Tsutomu Murakawa

Hiroshi Matsukizono

Takayuki Cho

Yosuke Kanzaki

Masahiko Hayakawa

Yukinori Shima

Yasutaka Nakazawa

Masahiro Katayama

Shigeyasu Mori

Akihiro Oda

To suppress a variation in characteristics of a transistor due to a released gas from an organic insulating film so that reliability of a display device is increased. The display device includes a transistor, an organic insulating film which is provided over the transistor in order to reduce unevenness due to the transistor, and a capacitor over the organic insulating film. An entire surface of the organic insulating film is not covered with components (a transparent conductive layer and an inorganic insulating film) of the capacitor, and a released gas from the organic insulating film can be released to the outside from exposed part of an upper surface of the organic insulating film.

Display device

A semiconductor device including a transistor and a wiring electrically connected to the transistor each of which has excellent electrical characteristics because of specific structures thereover is provided. A first conductive film, a first insulating film over the first conductive film, a second conductive film over the first insulating film, a second insulating film over the second conductive film, a third conductive film electrically connected to the first conductive film through an opening provided in the first insulating film and the second insulating film, and a third insulating film over the third conductive film are provided. The third conductive film includes indium, tin, and oxygen, and the third insulating film includes silicon and nitrogen and the number of ammonia molecules released from the third insulating film is less than or equal to 1&#xd7;10molecules/cmby thermal desorption spectroscopy.

Semiconductor device, display device including semiconductor device, display module including display device, and electronic device including semiconductor device, display device, and display module

To provide a highly reliable semiconductor device which includes a transistor including an oxide semiconductor, in a semiconductor device including a staggered transistor having a bottom-gate structure provided over a glass substrate, a gate insulating film in which a first gate insulating film and a second gate insulating film, whose compositions are different from each other, are stacked in this order is provided over a gate electrode layer. Alternatively, in a staggered transistor having a bottom-gate structure, a protective insulating film is provided between a glass substrate and a gate electrode layer. A metal element contained in the glass substrate has a concentration lower than or equal to 5&#xd7;10atoms/cmat the interface between the first gate insulating film and the second gate insulating film or the interface between the gate electrode layer and a gate insulating film.

Semiconductor device

An object is to suppress conducting-mode failures of a transistor that uses an oxide semiconductor film and has a short channel length. A semiconductor device includes a gate electrode, a gate insulating filmformed over the gate electrode, an oxide semiconductor filmover the gate insulating film, and a source electrodeand a drain electrodeformed over the oxide semiconductor film. The channel length L of the oxide semiconductor film is more than or equal to 1 &#x3bc;m and less than or equal to 50 &#x3bc;m. The oxide semiconductor film has a peak at a rotation angle 2&#x3b8; in the vicinity of 31&#xb0; in X-ray diffraction measurement.

Semiconductor device and manufacturing method thereof

Provided is a semiconductor device in which generation of a parasitic channel in an end region of an oxide semiconductor film is suppressed. The semiconductor device includes a gate electrode, an oxide semiconductor film, a source electrode and a drain electrode, and a channel region formed in the oxide semiconductor film. The channel region is formed between a first side surface of the source electrode and a second side surface of the drain electrode opposite to the first side surface. The oxide semiconductor film has an end region which does not overlap with the gate electrode. The end region which does not overlap with the gate electrode is positioned between a first region that is the nearest to one end of the first side surface and a second region that is the nearest to one end of the second side surface.

Field effect device with oxide semiconductor layer

Growing community of inventors

Tochigi, Japan

Masatoshi Yokoyama