Fujifilm Corporation

Masatoshi Yasumatsu

Hiroshi Maeda

Kazuhiro Nishida

Yoshihisa Negishi

Shunichi Hosaka

Eiji Watanabe

A solid-state imaging device, comprises: a semiconductor substrate having a first surface; a solid-state imaging element in the first surface of the semiconductor substrate, the solid-state imaging element comprising a light-receiving region; a light-transmission member having a second surface and a third surface, the second surface being opposite to the third surface, wherein the light-transmission member and the first surface of the semiconductor substrate define a gap between the second surface of the light-transmission member and an outer surface of the light-receiving region; and an external connection terminal connected to the solid-state imaging element, wherein a distance between the outer surface of the light-receiving region and the third surface of the light-transmission member is 0.5 mm or more.

Solid-state imaging device and method for manufacturing the same

A solid-state imaging device, comprises: a semiconductor substrate having a first surface; a solid-state imaging element in the first surface of semiconductor substrate, the solid-state imaging element comprising a light-receiving region; a light-transmission member having a second surface and a third surface, the second surface being opposite to the third surface, wherein the light-transmission member and the first surface of the semiconductor substrate define a gap between the second surface of the light-transmission member and an outer surface of the light-receiving region; and an external connection terminal connected to the solid-state imaging element, wherein the light-transmission member comprises low &#x3b1;-ray glass.

Growing community of inventors

Miyagi, Japan

Masatoshi Yasumatsu