Hitachi, Ltd.

Panasonic Liquid Crystal Display Co., Ltd.

Japan Display Inc.

Hitachi Displays, Ltd.

Hitachi Chemical Company, Ltd.

Tokyo Institute of Technology

Japan Dlsplay Inc.

Masatoshi Wakagi

Masahiko Ando

Yoshiaki Nakayoshi

Kazuhiko Yanagawa

Yasushi Iwakabe

Hiroshi Sasaki

Etsuko Nishimura

Yutaka Ito

Masahiro Kawasaki

Masaya Adachi

Kenichi Onisawa

Shingo Ishihara

Takayuki Nakakawaji

Masanobu Hanazono

Ritsuo Fukaya

Kunihiro Tamahashi

Mieko Matsumura

Shigeki Komatsuzaki

Mitsuyoshi Shoji

Fuminori Ishikawa

Yasushi Tomioka

Katsumi Kondo

Tsunenori Yamamoto

Sukekazu Aratani

Makoto Abe

Junichi Hanna

Yuka Utsumi

Yasunari Maekawa

Shigeharu Onuma

Kikuo Ono

Shinichi Komura

Ikuo Hiyama

Toshiki Kaneko

Mutsuko Hatano

Masahiro Ishii

Isao Suzumura

Daisuke Kajita

Shigeru Matsuyama

Akitoyo Konno

Tomohiro Okada

Tatsuki Inuzuka

Junji Tanno

Yoshiaki Toyota

Katsumi Tamura

Akira Sato

Motoo Akagi

Kenji Okishiro

Susumu Edo

Masaaki Imamura

Chiaki Yamagishi

Akiko Kagatsume

Tetsuroh Minemura

Ken-ichi Onisawa

Yasuo Shimamura

Shigeru Matsuama

Chiaki Yamabishi

There is provided a liquid crystal display (LCD) device that prevents light leaks near spacers. The LCD device controls the optical transmissivity of a liquid crystal layer interposed between substrates disposed opposite each other, by means of an electric field generated in the layer-thickness direction of the liquid crystal layer. The LCD device includes spacers on a liquid-crystal-side surface of one substrate, signal lines formed on a liquid-crystal-side surface of the other substrate, an insulating film formed to cover the signal lines, and electrodes on the insulating film's upper surface. Each electrode contributes to controlling the optical transmissivity of the liquid crystal layer. Each spacer has a vertex surface disposed opposite to the signal lines. A portion of each electrode extends to the upper surface of a corresponding signal line. The extended portion is opposite to a part of a spacer's vertex surface disposed opposite to the corresponding signal line.

Liquid crystal display device

Provided is a method of promoting a deposition of semiconductor crystal nuclei on an insulating film such as a silicon oxide film even at a low temperature of 450&#xb0; C. or lower in a reactive thermal CVD method. As one means thereof, a first semiconductor film is formed on an insulating substrate, and then semiconductor crystal nuclei are formed on parts of the first semiconductor film and simultaneously the first semiconductor film other than that in forming regions of the semiconductor crystal nuclei and their peripheries is removed by etching. Thereafter, a second semiconductor film is formed with using the semiconductor crystal nuclei as seeds.

Semiconductor device, manufacturing method thereof, and display apparatus using the semiconductor device

A display device includes a plurality of thin-film transistors formed on a substrate on which a display area is formed. At least one of the plurality of thin-film transistors includes a gate electrode, agate insulating film formed to cover the gate electrode, an interlayer insulating film formed on an upper surface of the gate insulating film and having an opening formed in an area where the gate electrode is formed in plan view, a pair of heavily-doped semiconductor films arranged on an upper surface of the interlayer insulating film with the opening interposed therebetween, a polycrystalline semiconductor film formed across the opening and formed in the area, the polycrystalline semiconductor film being electrically connected to the pair of heavily-doped semiconductor films, and a pair of electrodes formed to overlap the pair of heavily-doped semiconductor films, respectively, without overlapping the polycrystalline semiconductor film.

Display device

Each TFT for driving each of a plurality of pixels arranged in a matrix-like configuration is configured using a stagger-type polycrystalline-Si TFT. A gate electrode, which is composed of a high-heat-resistant material capable of resisting high temperature at the time of polycrystalline-Si film formation, is disposed at a lower layer as compared with the polycrystalline-Si layer that forms a channel of each TFT. A gate line, which is composed of a low-resistance material, is disposed at an upper layer as compared with the polycrystalline-Si layer. The gate electrode and the gate line are connected to each other via a through-hole bored in a gate insulation film. Respective configuration components of each organic electro-luminescent element are partially co-used at the time of the line formation, thereby suppressing an increase in the steps, processes, and configuration components.

Organic electro-luminescent display apparatus

In a thin film transistor, a semiconductor layer containing Si and Ge is applied, a Ge concentration of this semiconductor layer is high at the side of the insulating substrate, and crystalline orientation of the semiconductor layer indicates a random orientation in a region of 20 nm from the side of the insulating substrate, and indicates a (111), (110) or (100) preferential orientation at the film surface side of the semiconductor layer.

Thin film transistor and organic electroluminescence display using the same

A shift register circuit which stably operates with low electric power consumption and can realize a long life. In the shift register circuit constructed by connecting a plurality of fundamental circuits in each of which fundamental clocks of three phases are inputted to input terminals and is constructed by a gate line driving circuit, a timing control circuit, and a holding device control circuit, each of the gate line driving circuit and the timing control circuit has charging devices and holding devices. A node is stabilized by the timing control circuit.

Shift register circuit and display apparatus using the same

There is provided a liquid crystal display device in which light leaks near spacers are prevented. The liquid crystal display device controls the optical transmissivity of a liquid crystal layer interposed between substrates disposed in opposition to each other, by means of an electric field generated in the layer-thickness direction of the liquid crystal layer, includes spacers formed on a liquid-crystal-side surface of one of the substrates, signal lines formed on a liquid-crystal-side surface of the other substrate, an insulating film formed to cover the signal lines, and electrodes formed on the upper surface of the insulating film, each of which serves as one electrode contributing to control of the optical transmissivity of the liquid crystal layer. Each of the spacers has a vertex surface disposed in opposition to any of the signal lines, and a portion of each of the electrodes is extended to the upper surface of a corresponding one of the signal lines and the extended portion is opposed to a part of the vertex surface of a spacer disposed in opposition to the corresponding one of the signal lines.

The present invention provides a thin film transistor comprising a drain electrode and a source electrode separated by a channel region formed over a contact portion with an amorphous silicon layer and wherein an impurity from the channel region is removed and a remaining impurity is diffused into the contact portion to form a contact layer wherein the contact layer has a second resistance at least lower than the first resistance.

Thin film transistor used as a switching element in an active matrix type liquid crystal display device

The liquid crystal display apparatus includes a liquid crystal display, a backlight unit for emitting rays of light of three or more colors, the ray of each color being controlled, and applying these rays of light onto the liquid crystal display. A controller is further provided for controlling a change of display data of each color of the liquid crystal display and an emitted light quantity of each color of the backlight unit at a time, based on a video signal being inputted for displaying the corresponding image and an output signal sent from an ambient light sensor for sensing ambient light.

Liquid crystal display apparatus with control of LCD and backlight corresponding to an image

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Hitachi, Japan

Masatoshi Wakagi