Mitsubishi Electric Corporation

Masatoshi Sunamoto

Ryuji Ueno

Kazunari Nakata

Yoshiaki Terasaki

A semiconductor device manufacturing method includes thinning a wafer to form a wafer having an annular protruding portion on a peripheral portion thereof by grinding a central portion of a back surface of the wafer and then performing wet etching on the back surface of the wafer, forming a backside electrode on the back surface of the wafer, performing plating to evenly form a metal film on a portion of the backside electrode on the annular protruding portion, attaching a dicing tape to the metal film, and dicing the wafer having the dicing tape attached thereto.

Semiconductor device manufacturing method

Provided is a semiconductor element including: a front-back conduction-type substrate including a front-side electrode and a back-side electrode; and an electroless plating layer formed on at least one of the electrodes of the front-back conduction-type substrate. The electroless plating layer includes: an electroless nickel-phosphorus plating layer; and an electroless gold plating layer formed on the electroless nickel-phosphorus plating layer, and has a plurality of recesses formed on a surface thereof to be joined with solder.

Method of manufacturing a semiconductor element front side electrode

A technology capable of reducing contamination of a semiconductor substrate above which a nickel film is disposed is provided. A semiconductor device includes: a semiconductor substrate; an aluminum alloy film disposed on at least one of a front surface and a back surface of the semiconductor substrate; a catalyst metal film disposed above the aluminum alloy film and exhibiting catalytic activity for autocatalytic reaction that deposits nickel; an electroless nickel plating film disposed on the catalyst metal film; and a reactant layer disposed between the aluminum alloy film and the catalyst metal film and containing metal of the catalyst metal film.

Semiconductor device including a reactant metal layer disposed between an aluminum alloy film and a catalyst metal film and method for manufacturing thereof

Provided is a semiconductor-manufacturing apparatus that forms a plated film having a highly homogeneous thickness on a target surface of a semiconductor wafer through electroless plating. A semiconductor-manufacturing apparatus forms plated films on target surfaces of a plurality of wafers held by a carrier capable of holding the wafers. The semiconductor-manufacturing apparatus includes the following: a rectification mechanism including a rectification plate having a plurality of through-holes, the rectification mechanism being held by the carrier in such a manner that the rectification plate faces the target surface of each wafer; a bath in which a chemical solution for forming each plated film is stored, and in which the carrier, holding the plurality of wafers and the rectification mechanism, is immersed in the chemical solution; and a driver configured to shake the carrier as immersed in the bath with a relative positional relationship between each wafer and the through-holes kept constant.

Semiconductor-manufacturing apparatus and method for manufacturing semiconductor device

In a semiconductor element of the present invention, an electroless nickel-phosphorus plating layer and an electroless gold plating layer are formed on both a front-side electrode and a back-side electrode of a front-back conduction-type substrate. The front-side electrode and the back-side electrode are formed of aluminum or an aluminum alloy. The proportion of the thickness of the electroless nickel-phosphorus plating layer formed on the front-side electrode with respect to the thickness of the electroless nickel-phosphorus plating layer formed on the back-side electrode is in a range of 1.0 to 3.5. The semiconductor element of the present invention allows the occurrence of voids inside solder during mounting by soldering to be prevented.

Semiconductor element having a warped surface and production method thereof

A method for manufacturing a semiconductor device includes: forming a first major electrode on a first major surface of a semiconductor substrate; forming a second major electrode on a second major surface of the semiconductor substrate opposite to the first major surface; carrying out a surface activating treatment to activate surfaces of the first and second major electrodes; carrying out a surface cleaning treatment to clean up the surfaces of the first and second major electrodes; and after the surface activating treatment and the surface cleaning treatment, simultaneously forming first and second Ni films on the first and second major electrodes respectively by a wet film forming method, wherein a ratio of crystalline Ni contained in the first and second Ni films is 2% or more.

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Tokyo, Japan

Masatoshi Sunamoto