Idemitsu Kosan Company, Limited

Research Association for Petroleum Alternatives Development

Masatoshi Shibata

Kazuyoshi Inoue

Shigekazu Tomai

Emi Kawashima

Koki Yano

Hiromi Hayasaka

Yoshinobu Aoki

Minoru Senga

Satoshi Hachiya

Futoshi Utsuno

Masaru Nakagawa

Hiroyuki Endo

Yoshikatsu Seino

Kozo Takatsu

Tetsuya Fukunaga

Yuki Tsuruma

Atsushi Yao

Akira Kaijou

Motohiro Takeshima

Masashi Ohyama

Kenichi Sasaki

Masashi Oyama

Soichi Uchiyama

Mami Itose

Tsutomu Uchiyama

A crystalline oxide thin film contains an In element, a Ga element and an Ln element, in which the In element is a main component, the Ln element is at least one element selected from the group consisting of La, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu, and an average crystal grain size Dis in a range from 0.05 μm to 0.5 μm.

Crystalline oxide thin film, multilayer body and thin film transistor

A garnet compound represented by a general formula (I):LnInGaAlO  (I)(in the formula, Ln represents one or more metal elements selected from La, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu; and X satisfies an expression 0≤X<3).

Garnet compound, sintered body and sputtering target containing same

A schottky barrier diode element having a silicon (Si) substrate, an oxide semiconductor layer and a schottky electrode layer, wherein the oxide semiconductor layer includes a polycrystalline and/or amorphous oxide semiconductor having a band gap of 3.0 eV or more and 5.6 eV or less.

Oxide semiconductor substrate and schottky barrier diode

A compound includes indium element (In), gallium element (Ga), aluminum element (Al) and oxygen element (O), the compound having a triclinic crystal system with lattice constants being a=10.07&#xb1;0.15 &#x212b;, b=10.45&#xb1;0.15 &#x212b;, c=11.01&#xb1;0.15 &#x212b;, &#x3b1;=111.70&#xb1;0.50&#xb0;, &#x3b2;=107.70&#xb1;0.50&#xb0; and &#x3b3;=90.00&#xb1;0.50&#xb0;.

Compound

An oxide semiconductor film contains In, Ga, and Sn at respective atomic ratios satisfying formulae (1) to (3): 0.01&#x2264;Ga/(In+Ga+Sn)&#x2264;0.30 . . . (1); 0.01&#x2264;Sn/(In+Ga+Sn)&#x2264;0.40 . . . (2); and 0.55&#x2264;In/(In+Ga+Sn)&#x2264;0.98 . . . (3), and Al at an atomic ratio satisfying a formula (4): 0.05&#x2264;Al/(In+Ga+Sn+Al)&#x2264;0.30 . . . (4).

Oxide semiconductor film, thin film transistor, oxide sintered body, and sputtering target

A sintered oxide contains In element, Y element, and Ga element at respective atomic ratios as defined in formulae (1) to (3) below,0.80&#x2264;In/(In+Y+Ga)&#x2264;0.96&#x2003;&#x2003;(1),0.02&#x2264;Y/(In+Y+Ga)&#x2264;0.10&#x2003;&#x2003;(2), and0.02&#x2264;Ga/(In+Y+Ga)&#x2264;0.10&#x2003;&#x2003;(3), and

Garnet compound, oxide sintered compact, oxide semiconductor thin film, thin film transistor, electronic device and image sensor

A garnet compound represented by a general formula (I): LnInGaAlO(I) (in the formula, Ln represents one or more metal elements selected from La, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu; and X satisfies an expression 0&#x2264;X&#x3c;3).

A sintered oxide includes an InOcrystal, and a crystal A whose diffraction peak is in an incidence angle (2&#x3b8;) range defined by (A) to (F) below as measured by X-ray (Cu-K &#x3b1; ray) diffraction measurement: 31.0 to 34.0 degrees . . . (A); 36.0 to 39.0 degrees . . . (B); 50.0 to 54.0 degrees . . . (C); 53.0 to 57.0 degrees . . . (D); 9.0 to 11.0 degrees . . . (E); and 19.0 to 21.0 degrees . . . (F).

Amorphous oxide semiconductor film, oxide sintered body, thin film transistor, sputtering target, electronic device, and amorphous oxide semiconductor film production method

An oxide sintered body includes a bixbyite phase represented by InO, and a garnet phase represented by YInGaO.

Oxide sintered body and sputtering target

An oxide semiconductor film contains In, Ga, and Sn at respective atomic ratios of 0.01&#x2264;Ga/(In+Ga+Sn)&#x2264;0.30 . . . (1), 0.01&#x2264;Sn/(In+Ga+Sn)&#x2264;0.40 . . . (2), and 0.55&#x2264;In/(In+Ga+Sn)&#x2264;0.98 . . . (3), and a rare-earth element X at an atomic ratio of 0.03&#x2264;X/(In+Ga+Sn+X)&#x2264;0.25 . . . (4).

Oxide semiconductor film, electronic device comprising thin film transistor, oxide sintered body and sputtering target

An oxide sintered body is characterized in that it comprises an oxide including an In element, a Zn element, a Sn element and a Y element and that a sintered body density is equal to or more than 100.00% of a theoretical density.

Oxide sintered body, sputtering target and oxide semiconductor film

A Schottky barrier diode element includes an n-type or p-type silicon (Si) substrate, an oxide semiconductor layer, and a Schottky electrode layer, the oxide semiconductor layer including either or both of a polycrystalline oxide that includes gallium (Ga) as the main component and an amorphous oxide that includes gallium (Ga) as the main component.

A solid electrolyte including a lithium (Li) element, a phosphorus (P) element and a sulfur (S) element, theP MAS NMR spectrum thereof having a peak ascribed to a crystal at 90.9&#xb1;0.4 ppm and 86.5&#xb1;0.4 ppm; and the ratio (x) of the crystal in the solid electrolyte being from 60 mol % to 100 mol %.

Lithium ion conductive sulfide-based solid electrolyte and all-solid lithium battery using same

Provided is a catalyst for selective oxidation of CO gas in a gas of essentially hydrogen, and a method for producing the catalyst. The catalyst is highly active in a relatively high temperature range. The catalyst is for selectively oxidizing CO gas with hydrogen, and this carries ruthenium held on a carrier of titania and alumina, or carries ruthenium with an alkali metal and/or an alkaline earth metal held thereon. For producing the catalyst, a solution containing ruthenium and an alkali metal and/or an alkaline earth metal is applied to the carrier.

Growing community of inventors

Sodegaura, Japan

Masatoshi Shibata