Hitachi, Ltd.

Other

Hitachi Cable, Inc.

Hitachi Kyowa Engineering Co., Ltd.

Masatoshi Seki

Hideaki Takemori

Naoki Matsushima

Masatsugu Ogata

Shohei Hata

Kunihiro Maeda

Noboru Baba

Junji Sakai

Yuzo Kozono

Takahiko Ookouchi

Teruhisa Akashi

Hitoshi Okoshi

Eiji Sakamoto

Hideo Tsukioka

Kazuhiro Hirose

Yoshitaka Nakayama

Tamihito Kawahigashi

Moriichi Sato

Satoshi Higashiyama

Yoshishige Endou

Masao Shimizu

Akio Mitsuoka

Etuo Ohe

Motomichi Doi

Submounts for mounting optical devices which have an excellent heat radiating property and can be formed in a wafer state in batch are provided. A metallized electrode including optical device mounting parts and wiring parts is formed on a surface of a first substrate containing an insulating material as a main component, a through hole is formed in a glass substrate serving as a second substrate, the optical device mounting parts of the first substrate are aligned to be located inside the through hole of the second substrate, and the first substrate and the second substrate are joined together by use of a method such as anodic bonding.

Submount for optical device and its manufacturing method

An optical element-mounting substrate that makes it easy to optically couple the optical semiconductor element to the optical fiber or to the lens and that can be highly integrated while suppressing deterioration in the high-frequency signals. The optical element-mounting substrate for optically coupling the optical semiconductor element to the optical fiber through the lens, comprises an insulating film formed on the surface of the optical element-mounting substrate, grooves formed on the substrate for installing the optical fiber and the lens, a thin-film electrode formed on the insulating film, a thin-film capacitor and a thin-film temperature sensor arranged maintaining a distance from the thin-film electrode, and a solder film formed on the insulating film in a region where the optical semiconductor element is mounted so as to be electrically connected to the thin-film electrode.

Optical element-mounting substrate and method of producing the same

An X-ray tube which is high in brightness and high in resolution, and can withstand continuous long-time use, that is, it can withstand a high heat load. An X-ray target and an X-ray tube having the X-ray target include an X-ray generating metal layer having an average crystal grain diameter not larger than 30 &mgr;m on the surface of a base plate in the X-ray irradiated side. The X-ray tube has a small focus point and can withstand a high input load. A CT apparatus using the X-ray tube can provide a high resolution and a high definition image.

Anode target for X-ray tube and X-ray tube therewith

A continuous hot dipping apparatus which comprises a slide bearing structure of a bearing and a roll shaft which is of a combination of a ceramic material and a solid lubricant material, and which has good wear resistance and long term durability. A heat resistant steel is provided, which is used in a molten metal of hot dipping and which essentially consists of 0.15-0.30% C, not more than 20% Si, not more than 2% Mn, 20-30% Cr, 10-20% Ni and not less than 50% Fe.

Continuous hot dipping apparatus and slide bearing structure therefor

The present invention deals with a method of taking out a substrate electrode of a LOCOS-type silicon gate MOSIC device from the surface of the semiconductor substrate. According to the present invention, a masking layer for preventing the introduction of impurities is formed on the periphery of the semiconductor substrate simultaneously with the masking step for forming a resistor of polycrystalline silicon, the mask is removed after the impurities have been introduced, and a substrate electrode is formed on the exposed surface of the semiconductor substrate.

Utilizing simultaneous masking and diffusion of peripheral substrate

In a self-bondable insulated wire comprising a conductor and three resin insulating layers, the first resin insulating layer is formed with a resin selected from the group consisting of polyimide resins, polyamideimide resins and polyesterimide resins, the intermediate resin insulating layer is formed with a resin selected from the group consisting of polyvinyl formal resins and epoxy resins, and the outermost resin insulating layer is formed with a self-bondable resin of phenoxy series. Thus, a self-bondable insulated wire which is excellent in both oil resistance and heat resistance is obtained.

Self-bondable insulated wires comprising three coatings including a

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Hitachinaka, Japan

Masatoshi Seki