Japan Science and Technology Agency

Masatoshi Onoue

Tatsuya Shimoda

Takaaki Miyasako

Eisuke Tokumitsu

The invention provides a dielectric layer having high relative permittivity with low leakage current and excellent flatness. A dielectric layeraccording to the invention is made of multilayer oxide including a first oxide layermade of oxide consisting of bismuth (Bi) and niobium (Nb) or oxide consisting of bismuth (Bi), zinc (Zn), and niobium (Nb) (possibly including inevitable impurities) and a second oxide layermade of oxide of one type (possibly including inevitable impurities) selected from the group of oxide consisting of lanthanum (La) and tantalum (Ta), oxide consisting of lanthanum (La) and zirconium (Zr), and oxide consisting of strontium (Sr) and tantalum (Ta).

Dielectric layer and manufacturing method of dielectric layer, and solid-state electronic device and manufacturing method of solid-state electronic device

A solid-state electronic device according to the present invention includes: an oxide layer (possibly containing inevitable impurities) that is formed by heating, in an atmosphere containing oxygen, a precursor layer obtained from a precursor solution as a start material including both a precursor containing bismuth (Bi) and a precursor containing niobium (Nb) as solutes, the oxide layer consisting of the bismuth (Bi) and the niobium (Nb); wherein the oxide layer is formed by heating at a heating temperature from 520&#xb0; C. to 650&#xb0; C.

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Evanston, IL, United States of America

Masatoshi Onoue