Nissin Ion Equipment Co., Ltd.

Nissin Electric Co., Ltd.

Himeji Rika Co., Ltd.

Masatoshi Onoda

Yasunori Ando

Ippei Nishimura

Eiji Takahashi

Takeshi Matsumoto

Kohichi Orihira

Junichi Tatemichi

Koichi Orihira

Yasuhiro Kishimoto

Kazuo Shimizu

Ryosuke Goto

Koyu Ueno

Yusuke Otsuki

Provided is a substrate holding device comprising: a holder that holds a substrate irradiated with an ion beam; and a driving device that rotates the holder around a predetermined axis to change an inclination of the held substrate with respect to the ion beam, wherein the driving device comprises: a power source that outputs power to rotate the holder; a reduction gear provided in the middle of a power transmission path from the power source to the holder; a first shaft member that rotates together with the holder by a power outputted from the reduction gear; a first detector that detects a rotational motion of the first shaft member; and a power control device that controls the power source based on a detection value of the first detector.

Substrate holding device

A substrate holding device is provided. The substrate holding device includes a substrate holder, a shaft attached to the substrate holder, a motor attached to the shaft, lifting pins, and a transmission assembly. The lifting pins are movable between a retracted position below a surface of the substrate holder, and a protruded position protruding from the surface. The transmission assembly is provided between the shaft and lifting pins and switches the substrate holding device between a transmittable state in which a driving force from the motor is transmitted to the lifting pins to move the lifting pins between the retracted position and the protruded position, and a non-transmittable state in which the driving force from the motor is not transmitted to the lifting pins but rotates the substrate holder.

A substrate heating device is provided. The substrate heating device includes a vacuum chamber and a heater. The vacuum chamber receives a substrate. The heater includes a body, a heating wire, and a terminal part. The body penetrates through a wall of the vacuum chamber such that a portion of the body is in a vacuum atmosphere of the vacuum chamber. The heating wire is provided inside the body and partly disposed inside the vacuum chamber. The terminal part is connected to the heating wire and is disposed outside the vacuum chamber.

Substrate heating device

A substrate accommodation device includes a casing, a gas supply that supplies a gas into the casing, and a transfer structure which retains substrates vertically spaced apart from each other and vertically transfers the substrates first-in-first-out from a carry-in position to a carry-out position within the casing. The gas heats or cools the substrates as the substrates are transferred first-in-first-out from the carry-in position to the carry-out position.

Substrate accommodation device

A transport system is a vacuum processing system that includes a transport device that is provided in a vacuum, and a lubricating agent supply device that supplies lubricating agent to the transport device and provided in the ambient atmosphere. The transport device has a lubricating agent flow channel that is a channel for grease injected to a site subject to lubrication. The lubricating agent supply device has a grease server that stores a lubricating agent in the ambient atmosphere, a lubricating agent supply pipe which is a channel that guides the grease stored in the grease server to the lubricating agent flow channel and that connects the grease server and the lubricating agent flow channel, and an exhaust pump that exhausts the inside of the lubricating agent supply pipe.

Vacuum processing system, vacuum processing device, lubricating agent supply device, and lubricating agent supplying method

An ion irradiation apparatus is provided. The ion irradiation apparatus includes a support member, a measuring device, and a control device. The support member is larger than the substrate. The measuring device is disposed forwardly in a traveling direction of an ion beam. The ion irradiation apparatus operates in a first mode during which the measuring device is irradiated with a remaining part of the ion beam after being partially shielded by the support member, when the substrate is not irradiated with the ion beam after crossing the ion beam; and a second mode during which the measuring device is irradiated with the ion beam without being shielded by the support member, when the substrate is not irradiated with the ion beam after crossing the ion beam. The control device controls the substrate so that the ion treatment process is performed in the first mode at least one time during the treatment.

Ion irradiation apparatus and ion irradiation method

An ion implanter includes an implantation chamber into which an ion beam is introduced, a holder for holding substrates on two columns of a first column and a second column in an X-direction, and a holder driving unit having a function of setting the holder in a horizontal state and then positioning the holder in a substrate exchange position and a function of setting the holder in a standing state and then driving reciprocally and linearly the holder along the X-direction in an irradiation area of the ion beam. Also, the ion implanter includes two load lock mechanisms, and two substrate carrying units equipped with arms, which carry the substrates between the load lock mechanisms and a substrate exchange position respectively, every two arms.

Ion implanter

A plasma generating device provided with a plasma generating chamber () and a high-frequency antenna () arranged in the chamber () for generating inductively coupled plasma by applying a high-frequency power to a gas in the chamber () from the antenna (). The antenna () is a low-inductance antenna formed of a first portion () extending from the outside of the chamber () into the chamber (), and a plurality of second portions () diverging from an inner end () of the first portion () in an electrically parallel fashion, and having a termination () directly connected to the inner wall of the grounded chamber (). The surface of the antenna () is coated with an electrically insulating material. Frequency of the high-frequency power applied to the antenna may be in a range from 40 MHz to hundreds of megahertz. The plasma generating device can generate desired plasma by suppressing disadvantages such as abnormal discharge, matching failure and others, and can be constructed so that a desired processing such as film deposition can be performed.

Plasma generating device

This vacuum processing apparatus has a fixed processing chamberand two movable load lock chambersand. A gate valveis provided on the processing chamberand gate valvesare respectively provided on the load lock chambersand. Each of the load lock chambersandis moved in a Y direction by a preparatory chamber moving mechanismA vacuum sealwhich is expandable and shrinkable so as to vacuum seal a gap G between the gate valvesandwhich are set close to each other during the expansion, is provided around a peripheral edge portion of the processing chamber gate valveFurther, a substrate transporting mechanism for transporting a substratebetween the processing chamberand each of the load lock chambersandset close thereto.

Vacuum processing apparatus and method operation thereof

A substrate processing apparatus includes a processing chamber and a vacuum spare chamber adjacent thereto through a vacuum valve. The processing chamber houses two holders for holding substrates on their surfaces on the same side. The processing chamber is provided with an ion source for irradiating the substrate on each holder having reached a processing position P with an ion beam so that it is subjected to ion implantation. The processing chamber is internally provided with a holder moving mechanism for performing the operation of moving the two holders in parallel independently from each other so that they traverse the processing position P, and moving the two holders in parallel simultaneously between the insides of the processing chamber and vacuum spare chamber through the vacuum valve. The vacuum spare chamber is internally provided with a substrate replacing mechanism for replacing processed substrates and non-processed substrates with each other collectively for the two holders in cooperation with the holder moving mechanism.

Growing community of inventors

Kyoto, Japan

Masatoshi Onoda