Funai Electric Company Ltd.

Funai Electric Advanced Applied Technology Research Institute Inc.

National Institute of Advanced Industrial Science and Technology

Seiko Instruments Inc

Agency of Industrial Science and Technology

Vacuum Products Corporation

Onpa Technologies Inc.

Masatoshi Ono

Tetsuo Shimizu

Yutaka Hayashi

Toshimi Fukuoka

Rikuo Takano

Ryusuke Horibe

Fuminori Tanaka

Takeshi Inoda

Kiyoshi Sugiyama

Shigeo Furuta

Tsuyoshi Takahashi

Yuichiro Masuda

Hideki Choji

Shigeo Maeda

Yasuhisa Naitoh

Touru Sumiya

Masayo Horikawa

Hiroshi Suga

Yasuhisa Naitou

Kumaragurubaran Somu

Tetsuya Higuchi

Masao Suzuki

Morinobu Endo

Fujio Mizukami

Shigeru Wakiyama

Tetsuo Uchiyama

Hiroshi Murakami

Hiroshi Bando

Hisao Hojoh

Hidekazu Abe

Fumiki Sakai

Wu Weng

Wataru Mizutani

Takashi Wakatsuki

Taro Itaya

Hideki Chouji

Satoshi Shirai

Kazuyoshi Oshima

Takeshi Shimomura

Tetsuji Itoh

Yasushisa Naitoh

A microphone unit includes a microphone substrate. A plurality of diaphragm units are disposed on the microphone substrate. Each of the diaphragm units includes a diaphragm. A plurality of partition walls are disposed on the microphone substrate. Each of the partition walls surrounds the diaphragm so as to define a first area. A signal processor is disposed at a second area outside the first area and is configured to process signals output from the diaphragm units.

Microphone unit having a plurality of diaphragms and a signal processing unit

A storage element includes a first electrode and a second electrode separated by a gap and a dielectric layer provided between the first electrode and the second electrode to fill the gap. A separation distance of the gap changes in response to application of a voltage to a space between the first electrode and the second electrode, such that a switching phenomenon is produced which switches a resistance state between the first electrode and the second electrode between a high resistance state in which it is difficult for tunnel current to flow and a low resistance state in which it is easy for tunnel current to flow.

Storage element

In a drive method for a memory element that includes an insulating substrate, a first electrode and a second electrode provided on the insulating substrate, and an inter-electrode gap portion provided between the first electrode and the second electrode and having a gap of the order of nanometers where a phenomenon of a change in resistance value between the first and second electrodes occurs, and that can perform a transition from a predetermined low-resistance state to a predetermined high-resistance state and a transition from the high-resistance state to the low-resistance state, a current pulse is applied to the memory element by a constant current circuit upon the transition from the high-resistance state to the low-resistance state.

Drive method for memory element and storage device using memory element

A memory element includes an insulating substrate; a first electrode and a second electrode on the insulating substrate; and an inter-electrode gap portion that causes a change in resistance value between the first and second electrodes. Applied to the memory element from a pulse generating source is a first voltage pulse for shifting from a predetermined low-resistance state to a predetermined high-resistance state, and a second voltage pulse for shifting from the high-resistance state to the low-resistance state through a series-connected resistor, by which current flowing to the memory element after the change to a low resistance value is reduced. When shifting from the high to the low-resistance state, a voltage pulse is applied such that an electrical resistance between the pulse generating source and the memory element becomes higher than the electrical resistance shifting from the low to the high-resistance state.

Drive method for memory element, and storage device using memory element

Disclosed is a fabrication method of an element with nanogap electrodes including a first electrode, a second electrode provided above the first electrode, and a gap provided between the first electrode and the second electrode, the gap being in an order of nanometer to allow resistive state to be switched by applying a predetermined voltage between the first electrode and the second electrode, the method comprising: forming the first electrode; forming a spacer on an upper surface of the first electrode; forming the second electrode in contact with an upper surface of the spacer; and removing the spacer to form the gap.

Method of fabricating element including nanogap electrodes

An integrated circuit device includes a circuit board ('), the circuit board including a first diaphragm (-) that forms a first microphone, a second diaphragm (-) that forms a second microphone, and a differential signal generation circuit () that receives a first voltage signal obtained by the first microphone and a second voltage signal obtained by the second microphone, and generates a differential signal that indicates a difference between the first voltage signal and the second voltage signal.

Integrated circuit device, voice input device and information processing system

A microphone unit includes a case; a diaphragm arranged inside the case; and an electric circuit unit that processes an electric signal generated in accordance with vibration of the diaphragm. The case has a first sound introducing space that introduces a sound from outside of the case to a first surface of the diaphragm via a first sound hole; and a second sound introducing space that introduces a sound from outside of the case to a second diaphragm, via a second sound hole. A resonance frequency of the diaphragm is set in the range of &#xb1;4 kHz based on the resonance frequency of at least one of the first sound introducing space and the second sound introducing space.

Microphone unit

There is provided an integrated circuit device having a wiring board', the wiring board&#x2032; including: a first vibrating membrane-which forms a first microphone; a second vibrating membrane-which forms a second microphone; and a differential signal generating circuitwhich receives a first voltage signal obtained in the first microphone and a second voltage signal obtained in the second microphone and generates a differential signal indicating a difference between the first and second voltage signals, and a voice input device and an information processing system including the same. Accordingly, it is possible to realize a voice input element having a small size and a noise removal function with high accuracy.

A voice input device, a method for manufacturing the same, and an information processing system are provided. The voice input device has a function of removing a noise component and includes a first microphone-that includes a first vibrating membrane, a second microphone-that includes a second vibrating membrane, and a differential signal generation sectionthat generates a differential signal between a first voltage signal and a second voltage signal. The first and second vibrating membranes are disposed so that a noise intensity ratio is smaller than an input voice intensity ratio that represents the ratio to intensity of an input voice component. The differential signal generation sectionincludes a delay sectionand a differential signal output sectionthat generates and outputs a differential signal with respect to a signal to which a delay is applied by the delay section.

Voice input device, method for manufacturing the same, and information processing system

A voice input device includes a first microphone (-) that includes a first diaphragm, a second microphone (-) that includes a second diaphragm, and a differential signal generation section () that generates a differential signal that indicates a difference between a first voltage signal and a second voltage signal, the first diaphragm and the second diaphragm being disposed so that a noise intensity ratio is smaller than an input voice intensity ratio (input voice component intensity ratio), and the differential signal generation section () including a gain section () that amplifies the first voltage signal by a predetermined gain, and a differential signal output section () that generates and outputs a differential signal that indicates a difference between the first voltage signal amplified by the gain section and the second voltage signal.

Voice input device, method of producing the same, and information processing system

There is provided a switching element which facilitates integration with higher density and lamination in a device, the switching element including: an insulating substrate; a first electrode provided on the insulating substrate; a second electrode provided above the first electrode; and a between-electrode gap section provided between the first electrode and the second electrode and including a nanometer-scale gap for causing a switching phenomenon of a resistor by applying a prescribed voltage between the first electrode and the second electrode.

Switching element

To provide a downsized microphone unit in which a differential microphone is densely mounted thereon. The microphone unit has a cover portionand a microphone substrate, in which a first substrate internal spaceis communicated with a cover portion internal spacevia a first substrate openingand a cover portion opening, and is communicated with the outside via a second substrate opening, a second substrate internal spaceis communicated with the cover portion internal spacevia a third substrate openingand a cover portion opening, and is communicated with the outside via a fourth substrate opening, a partition portioncovers a communication aperture between the first substrate openingand the cover portion opening, and a diaphragmcovers at least a part of the communication aperture between the first substrate openingand the cover portion opening

A voice input device includes a first microphone (-) that includes a first diaphragm, a second microphone (-) that includes a second diaphragm, and a differential signal generation section () that generates a differential signal that indicates a difference between a first voltage signal and a second voltage signal, the first diaphragm and the second diaphragm being disposed so that a noise intensity ratio is smaller than an input voice intensity ratio (input voice component intensity ratio), and the differential signal generation section () including a delay section (), and a differential signal output section () that generates and outputs a differential signal based on a signal delayed by the delay section.

A microphone unitof the present invention includes a casehaving an internal space, a partition memberwhich is provided in the case, and at least partially composed of a vibrating membrane, that splits the internal space into a first spaceand a second space, and an electrical signal output circuitthat outputs an electrical signal on the basis of vibration of the vibrating membrane. A first through holethrough which the first spaceand an external space of the case are communicated with each other, and a second through holethrough which the second spaceand the external space of the case are communicated with each other are formed in the case. In accordance with the present invention, it is possible to provide a high-quality microphone unit whose outer shape is small and which is capable of performing thorough noise cancellation.

Microphone unit, close-talking type speech input device, information processing system, and method for manufacturing microphone unit

Provided is a microphone unit having flat frequency characteristics. A microphone unit includes a casing, a first substrate, a second substrate, a vibrating unit, a diaphragm, an ASIC, and a dummy component. The dummy component is attached to the substrate to be located below an opening.

Microphone unit and mobile phone provided with the same

Growing community of inventors

Tsukuba, Japan

Masatoshi Ono