Mitsubishi Denki Kabushiki Kaisha

Masatoshi Nii

Moriyasu Miyazaki

Hidenori Yukawa

Hideyuki Oh-Hashi

An RF circuit module comprising a first RF semiconductor device mounted within a cavity surrounded by a wall of a first dielectric circuit board and a second RF semiconductor device mounted to a second dielectric circuit board placed on the wall A metal base is disposed on the first circuit board and a number of embedded conductors such as via holes are embedded within the wall and arranged to surround the cavity so that each having one end electrically connected to the metal base and the other end exposed and arranged to surround the cavity A metal cover is sealingly attached to the first circuit board to cover the second circuit board and the second RF semiconductor device and electrically connected at the upper surface of the wall Therefore, the first and second RF semiconductor devices are electrically shielded and hermetically sealed, providing an RF circuit module of small-sized and high-performance. The metal cover may have a plate-like shape, the first circuit board may be a high-temperature burned circuit board and the second circuit board may be a low-temperature burned circuit board, the electrical connection between the first circuit board and the second circuit board may be made through a solder bump or an anisotropic conductive sheet. The metal base may be exposed to the cavity, the first circuit board may have mounted thereon a transmission circuit and the second circuit board may have mounted thereon a reception circuit, and a high-frequency circuit device, which is not necessary to be hermetically sealed, may be mounted on the first circuit board outside of the metal cover.

Growing community of inventors

Tokyo, Japan

Masatoshi Nii