Disco Corporation

Kansai Paint Company, Ltd.

Masatoshi Nanjo

Shinichi Namioka

Masahiko Kitamura

Koichi Yajima

Kazuhisa Arai

Koichi Tamura

Kouichi Yajima

Kouji Takezoe

Akito Ichikawa

A method of dividing a wafer having a plurality of areas, which are sectioned by the streets formed on the front surface in a lattice pattern and a plurality of devices, which are formed in the sectioned areas, along streets, the method comprising a first cutting step for holding the front surface of the wafer on a chuck table of a cutting machine and forming a first groove having a depth that is about half of the thickness of the wafer, along the streets from the rear surface of the wafer; a second cutting step for holding the rear surface of the wafer on a chuck table and forming a second groove which does not reach the first groove, along the streets from the front surface of the wafer; and a dividing step for breaking an uncut portion between the first groove and the second groove by exerting external force along the streets of the wafer, on which the first grooves and the second grooves have been formed.

Wafer dividing method

A wafer, in which a plurality of rectangular regions are defined on the face of the wafer by streets arranged in a lattice pattern, and a semiconductor memory element is disposed in each of the rectangular regions, is divided along the streets to separate the rectangular regions individually, thereby forming a plurality of semiconductor devices. Before the wafer is divided along the streets, a strained layer having a thickness of 0.20 &#x3bc;m or less, especially 0.05 to 0.20 &#x3bc;m, is formed in the back of the wafer. The strained layer is formed by grinding the back of the semiconductor wafer by a grinding member formed by bonding diamond abrasive grains having a grain size of 4 &#x3bc;m or less by a bonding material.

Semiconductor device including semiconductor memory element and method for producing same

A cassette for storing a plurality of semiconductor wafers with a space in the vertical direction has a plurality of support plates which are provided spaced apart from one another in the vertical direction. A receiving cut-out having a shape corresponding to the shape of an adsorber for suction-holding a semiconductor wafer are formed in the front half portion of each of the support plates. The cassette further comprises separation plates between adjacent support plates.

Cassette having separation plates for storing a plurality of semiconductor wafers

In manufacturing thinned semiconductor chips by grinding a semiconductor wafer supported on a rigid support substrate, in order to remove the semiconductor wafer or semiconductor chips from the support substrate without damage to the semiconductor wafer or semiconductor chips, a semiconductor wafer at its surface is bonded on a light-transmissive support substrate through an adhesive layer having an adhesion force that is reduced upon exposure to light radiation, thereby exposing the back surface of the semiconductor wafer. A tape is bonded to the backside of the semiconductor wafer integrated with the support substrate after grinding, wherein the tape is supported at the periphery. Before or after bonding of the tape, light radiation is applied to the adhesive layer at a side close to the support substrate to reduce the adhesion force in the adhesion layer. Thereafter, the support substrate and adhesive layer is removed from the surface of the semiconductor wafer, leaving the semiconductor wafer held by the tape and frame. The semiconductor wafer supported by the tape and frame is cut at streets into individual semiconductor chips.

Method for manufacturing semiconductor chip

A semiconductor wafer protecting unit which enables a semiconductor wafer to be handled as required, without breakage of the semiconductor wafer, even when the back of the semiconductor wafer is ground to decrease the thickness of the semiconductor wafer markedly; and a semiconductor wafer processing method using such a semiconductor wafer protecting unit. The semiconductor wafer protecting unit is composed of a magnetized tape having one surface with tackiness, and a magnetic substrate having many pores formed at least in a central zone thereof.

Semiconductor wafer protective device and semiconductor wafer treatment method

A wafer support plate comprises a support surface on which a semiconductor wafer is supported, and a crystal orientation mark which indicates the crystal orientation of the semiconductor wafer. Even the semiconductor wafer thinned by grinding can be stably held on the support surface, and the crystal orientation can be recognized even when the outer periphery of the semiconductor wafer has chipped.

Wafer support plate

Prior to a grinding step, the front surface of a semiconductor wafer is stuck on a substrate to be mounted on the substrate. The transfer step of mounting the semiconductor wafer on a frame having a mounting opening in its center portion through a mounting tape and removing the substrate from the front surface of the semiconductor wafer is carried out between the grinding step and the subsequent treating step. The substrate is formed of a laminate consisting of a plurality of layers.

Growing community of inventors

Tokyo, Japan

Masatoshi Nanjo