Nichia Corporation

Masatoshi Nakagaki

Soichiro Miura

Kazuma Kozuru

Tadaaki Miyata

Yoshihiro Kimura

Takeshi Imai

Eiichiro Okahisa

Takuya Hashimoto

Hideyuki Fujimoto

Kazuya Eto

A light-emitting device includes first and second light-emitting elements, upper submounts, and a lower submount. The upper submounts include a first submount having a first upper surface and a first lateral surface located on a same side as an emission end surface of the first light-emitting element, and a second submount having a second upper surface and a second lateral surface located on a same side as an emission end surface of the second light-emitting element. In a top plan view, the first lateral surface is located forward relative to the second lateral surface, and the emission end surface of the first light-emitting element is located forward relative to the emission end surface of the second light-emitting element. At least a portion of the first lateral surface is protruded forward relative to an edge along which an upper surface and a lateral surface of the lower submount meet.

Light-emitting device

A laser package includes: a substrate having an upper surface; a first laser element disposed on the substrate and configured to emit light in a first direction; a first optical member having a lower surface bonded to the upper surface of the substrate, a reflecting surface inclined relative to the lower surface and configured to reflect the light, and an upper surface connected to the reflecting surface, the upper surface of the first optical member being located farther in the first direction than the reflecting surface; and a bonding material disposed on the upper surface of the substrate. The first optical member is bonded to the substrate via the bonding material. In a top view, a portion of the bonding material protrudes from three sides of the upper surface of the first optical member.

Method for manufacturing laser package

A light-emitting device includes first and second light-emitting elements, first and second support members, first and second protective elements, a first wiring with one end bonded to the first light-emitting element or the first support member, a second wiring with one end bonded to the first light-emitting element or the first support member and the other end bonded to the second light-emitting element or the second support member, a third wiring with one end bonded to the first protective element or the first support member and the other of end bonded to the second protective element or the second support member; and a fourth wiring with one end bonded to the first protective element or the first support member. The first and second light-emitting elements and the first and second protective elements are aligned. The third and fourth wiring do not pass directly above the first and second light-emitting elements.

A method for manufacturing a semiconductor device include: providing a submount that has a first surface, a second surface located on a side opposite the first surface, and at least one lateral surface located between the first surface and the second surface, the submount including: a groove located at the second surface, a heat dissipation portion located at the second surface, at least one end face through channel located at the at least one lateral surface, and an electrode pattern on the first surface; physically joining the heat dissipation portion to a package substrate by a first joint material; and after the step of physically joining the heat dissipation portion to the package substrate, disposing a second joint material inside the at least one end face through channel to electrically connect the electrode pattern and the package substrate.

Method for manufacturing semiconductor device with submount including groove on surface of submount having heat dissipation portion

A light emitting device includes first and second semiconductor laser elements, first and second light-reflective members, and a basal part. The light emitted from the first semiconductor laser element irradiates a first light-reflective surface of the first light-reflective member at a first position. The light emitted from the second semiconductor laser element irradiates a second light-reflective surface of the second light-reflective member at a second position. A height of the first position is different from a height of the second position. With respect to a virtual axis extending along the prescribed direction, the first position and the second position have the same coordinates. A mounting position of the first light-reflective member and a mounting position of the second light-reflective member are different with respect to the prescribed direction.

Light emitting device

A light-emitting device includes first and second light-emitting elements, first and second support members bonded to the first and second light-emitting elements, respectively, first and second protective elements, and a plurality of wirings including: a first wiring with one end being bonded to the first light-emitting element or the first support member; a second wiring with one end being bonded to the first light-emitting element or the first support member and the other end being bonded to the second light-emitting element or the second support member; a third wiring with one end being bonded to the first protective element or a support member equipped with the first protective element; and a fourth wiring with one end being bonded to the second protective element or a support member equipped with the second protective element.

A semiconductor device includes: a semiconductor element; a submount on which the semiconductor element is mounted, wherein the submount has a first surface on which the semiconductor element is mounted, a second surface located on a side opposite the first surface, and a lateral surface located between the first surface and the second surface, and wherein the submount comprises: a groove located at the second surface, a heat dissipation portion located at the second surface, and an electrode pattern located at the first surface; a package substrate on which the submount is mounted; a first joint member that physically joins the heat dissipation portion to the package substrate; and a connection portion located on the side surface, wherein the connection portion electrically connects the electrode pattern and the package substrate, and the connection portion comprises a second joint member.

Semiconductor device and method for manufacturing semiconductor device

A light emitting device includes: a first semiconductor laser element; a base portion including: a bottom portion including a first upper surface on which the first semiconductor laser element is disposed, and a frame portion surrounding the first semiconductor laser element, the frame portion including a second upper surface positioned above the first upper surface and a support portion positioned between the first upper surface and the second upper surface, the a support portion having a support area; a light reflecting member having a flat plate-shaped and contacting the support area, the light reflecting member being configured to reflect light from the first semiconductor laser element; and a lid portion bonded to the second upper surface.

Light emitting device and method of manufacturing light emitting device

A light emitting device includes first to third semiconductor laser elements. Each of the semiconductor laser elements includes at least two emitters, and configured to emit red-color light, green-color light, or blue-color light. The mount member includes first to third conduction parts, each including a plurality of metal films including mounting regions that are aligned in a predetermined direction. The first to third semiconductor laser elements are respectively mounted on the first to third conduction parts of the mount member in a junction-down configuration.

A light emitting device comprises: a semiconductor laser element; a base portion comprising: a bottom portion on which the semiconductor laser element is located, and a frame portion comprising a step and surrounding the semiconductor laser element; and a light reflecting member disposed on the bottom portion of the base portion so as to lean against the step, the light reflecting member being configured to reflect light from the semiconductor laser element.

A mount member includes first and second conduction parts. In the first conduction part, as seen in a top view, a length in a first direction parallel to an emission end surface of a first semiconductor laser element is smaller than a length in a second direction perpendicular to the emission end surface, and, in relation to the second direction, a first wiring region extends from a first mounting region in a direction from the light emission end surface to an opposite end surface. In relation to the second direction, a second conduction part extends further than the first conduction part in a direction from an emission end surface to an opposite end surface of a second semiconductor laser element, and from a region where the second conduction part extends further than the first conduction part, the second conduction part extends toward the first conduction part in the first direction.

Mount member and light emitting device

A mounting component includes a main body and a metal layer. The main body has a first main surface and a second main surface. The metal layer is arranged on the first main surface of the main body. The metal layer includes at least one concave recognition mark having an inclined surface that is inclined with respect to a main surface of the metal layer.

Mounting component, semiconductor device using same, and manufacturing method thereof

A semiconductor laser device comprises a base, a first conductive layer, a second conductive layer, a third conductive layer, and a semiconductor laser chip in this order, each of which has a respective emitting-side end portion. The emitting-side end portion of the first conductive layer is in a common plane with the emitting-side end portion of the base. A thickness of the second conductive layer is greater than a thickness of the first conductive layer. The emitting-side end portion of the second conductive layer is disposed inward of the emitting-end portion of the first conductive layer. The emitting-side end portion of the third conductive layer is in a common plane with the emitting-side end portion of the second conductive layer. The emitting-side end portion of the semiconductor laser chip is disposed outward of the emitting-side end portion of the third conductive layer.

Growing community of inventors

Komatsushima, Japan

Masatoshi Nakagaki