Asahi Kasei Emd Corporation

Nippon Steel Corporation

Nippon Steel Sumitomo Metal Corporation

Masatoshi Miyahara

Hiroaki Uchiyama

Masahito Hanao

Kohei Fujimoto

Yoshihiko Shibata

Takashi Ikeda

Yoshihisa Kunimi

A primary object of the present invention is to provide a technique of avoiding occurrence of surface defects caused by an electromagnetic brake while checking internal defects with this electromagnetic brake, so that cleanliness of a cast steel can be improved compared with prior arts, and the present invention provides a method for continuously casting steel, the method comprising supplying molten steel into a funnel mold while applying an electromagnetic brake to an outlet flow discharged from an outlet port of an immersion nozzle, wherein magnetic flux density (B) of the electromagnetic brake is within a range of the following (Formula 1): 

Method for continuously casting steel

A primary object of the present invention is to provide a technique of avoiding occurrence of surface defects caused by an electromagnetic brake while checking internal defects with this electromagnetic brake, so that cleanliness of a cast steel can be improved compared with prior arts, and the present invention provides a method for continuously casting steel, the method comprising supplying molten steel into a mold while applying an electromagnetic brake to an outlet flow discharged from an outlet port of an immersion nozzle, wherein magnetic flux density (B) of the electromagnetic brake is within a range of the following (Formula 1): 

A method for manufacturing the compound semiconductor substrate having a reduced dislocation density at an interface between a Si substrate. Contaminants, such as organic matter and metal, on a surface of a Si substrate are removed whereby a flat oxide film is formed. The oxide film on the surface is removed by using an aqueous hydrogen fluoride solution, whereby hydrogen termination treatment is performed. Immediately after being subjected to the hydrogen termination treatment the temperature of the Si substrate is raised in a vacuum apparatus. If the substrate temperature is raised without any operation, the termination hydrogen is released. Before the hydrogen is released, pre-irradiation with As is performed. Thus, an interface between the Si substrate and the compound semiconductor layer is prepared. Several minutes later, irradiation with Ga and As is performed. Thereby, the compound semiconductor is formed.

Compound semiconductor substrate and method for manufacturing the same

The present invention relates to a compound semiconductor lamination that enables an InSb film to be formed on an Si substrate and enables development of applications to magnetic sensors, such as Hall elements, magneto-resistance elements, etc., optical devices, such as infrared sensors, etc., and electronic devices, such as transistors, etc., to be provided industrially, and a method for manufacturing the compound semiconductor lamination. An active layer, which is a compound semiconductor that does not contain As, is directly formed on an Si substrate. As is present at an interface of the active layer and a single crystal layer of the Si substrate. The compound semiconductor contains at least nitrogen. The compound semiconductor is a single crystal thin film. The Si substrate is a bulk single crystal substrate or a thin film substrate with an uppermost layer being Si.

Growing community of inventors

Yachiyo, Japan

Masatoshi Miyahara