Glytech, Inc.

Renesas Electronics Corporation

Asahi Kasei E-materials Corporation

Asahi Kasei Kabushiki Kaisha

Masatoshi Maeda

Kazuhiro Fukae

Keisuke Tazuru

Katsunari Tezuka

Hirofumi Ochiai

Taiji Shimoda

Kenta Yoshida

Hiroshi Kuroiwa

Koichi Yamazaki

Yasuhiro Kajihara

Ryo Kanda

Jun Koike

Tetsu Toda

Kazuyuki Ishii

Fujito Yamaguchi

Yoshimichi Mitamura

Izumi Sakamoto

Takashi Tsuji

Masaru Suzuki

Norikiyo Nakagawa

Masaki Ohuchi

Yasuhiro Shirai

Yusuke Sugawara

Toshiya Nozawa

Kazuyuki Furuya

Yoshitaro Kondo

Mika Nishihara

Shoichi Kamimura

Shinji Arihisa

A seamless mold manufacturing method of the invention is a seamless mold manufacturing method having the steps of forming a thermal reaction type resist layer on a sleeve-shaped mold, and exposing using a laser and developing the thermal reaction type resist layer and thereby forming a fine mold pattern, and is characterized in that the thermal reaction type resist layer is comprised of a thermal reaction type resist having a property of reacting in predetermined light intensity or more in a light intensity distribution in a spot diameter of the laser.

Seamless mold manufacturing method

The object of the present invention is to provide a glycosylated polypeptide having uniform sugar chain structure which has interferon &#x3b2; activity. It was found that a glycosylated polypeptide having uniform sugar chain structure as well as having interferon &#x3b2; activity can be prepared by a method comprising a step of synthesizing a glycosylated peptide fragment and at least two peptide fragments and a step of linking the glycosylated peptide fragment and the at least two peptide fragments.

Glycosylated polypeptide and pharmaceutical composition containing same

A driver IC includes a ring-shaped termination area, and a first area and a second area that are respectively arranged outside and inside the termination area on a layout. A sense MOS that is arranged between a floating terminal and a first sense node and is driven at a power supply voltage is formed in the termination area. A fault detection circuit that detects presence of a fault when a voltage of the first sense node is higher than a decision voltage that has been determined in advance in a period of time that a low side driver is driving a low side transistor into an ON state is formed in the first area.

Semiconductor device and electric power control apparatus

The object of the present invention is to provide a polypeptide having interferon &#x3b2; activity glycosylated with highly uniform sialylated sugar chains. The present invention is a glycosylated polypeptide, wherein the polypeptide is any polypeptide selected from the group consisting of the following (1) to (4); (1) a polypeptide consisting of the amino acid sequence represented by SEQ ID NO. 1, (2) a polypeptide having one or a few amino acids deleted, substituted, or added in the polypeptide consisting of the amino acid sequence represented by SEQ ID NO. 1, (3) a polypeptide that is an analog of interferon &#x3b2;, and (4) a polypeptide having 80% or more homology to the polypeptide consisting of the amino acid sequence represented by SEQ ID NO. 1, in which amino acids at 4 to 6 locations are substituted with glycosylated amino acids, and wherein all of the non-reducing terminals of said sugar chain are sialylated.

Polypeptide having sialylated sugar chains attached thereto

[Problem] To provide a glycosylated polypeptide having an affinity to somatostatin receptors, and, compared to somatostatins, having improved in-blood stability. [Solution] The glycosylated polypeptide is characterized by at least one amino acid in a somatostatin or an analog thereof being replaced with a glycosylated amino acid.

Glycosylated polypeptide and drug composition containing said polypeptide

Erroneous mounting of a semiconductor power module can be more easily detected. A semiconductor power module () according to the present invention includes: a status signal generation unit () configured to detect a status in the semiconductor power module () and generate and output a status signal indicating the detected status; an identification information storage unit () configured to preliminarily store identification information for identifying the semiconductor power module () and output an identification signal indicating the identification information; and a switching unit () configured to select one of the status signal output from the status signal generation unit () and the identification signal output from the identification information storage unit () and output the selected signal to an outside of the semiconductor power module ().

Semiconductor power module and drive system for electric motor

[Problem] To provide a glycosylated polypeptide having affinity to somatostatin receptors and, compared to somatostatins, having improved in-blood stability. [Solution] The glycosylated polypeptide is characterized by at least two amino acids in a somatostatin or an analog thereof being replaced by glycosylated amino acids.

A driver IC includes a ring-shaped termination area, and a first area and a second area that are respectively arranged outside and inside the termination area on a layout. A sense MOS that is arranged between floating terminal and a first sense node and is driven at a power supply voltage is formed in the termination area. A fault detection circuit that detects presence of a fault when a voltage of the first sense node is higher than a decision voltage that has been deteLutined in advance in a period of time that a low side driver is driving a low side transistor into an ON state is formed in the first area.

[Problem] To provide a glycosylated polypeptide having affinity to somatostatin receptors and, compared to somatostatins, having improved in-blood stability. [Solution] The glycosylated polypeptide is characterized by at least two amino acids in a somatostatin or an analogue thereof being replaced by glycosylated amino acids.

To provide a substrate for optics provided with a fine-structure product which improves luminous efficiency of an LED while improving internal quantum efficiency IQE by decreasing the number of dislocation defects in a semiconductor layer, a substrate for optics () is provided with a fine-structure layer () including dots comprised of a plurality of convex portions () extending in the direction of from the main surface of a substrate () to outside the surface, where the fine-structure layer () has a plurality of dot lines (-to-N) in which a plurality of dots is arranged with a pitch Py in the first direction in the main surface of the substrate (), while having the plurality of dot lines in which a plurality of dots is arranged with a pitch Px in the second direction orthogonal to the first direction in the main surface of the substrate (), one of the pitch Py and the pitch Px is a constant interval of nano-order, while the other one is an inconstant interval of nano-order, or both are inconstant intervals of nano-order.

Substrate for optics having a plurality of dot lines, semiconductor light emitting device. and exposure apparatus

Disclosed is a layered product for fine pattern formation and a method of manufacturing the layered product for fine pattern formation, capable of easily forming a fine pattern having a thin or no remaining film in order to form a fine pattern having a high aspect ratio on a processing object. The layered product for fine pattern formation (1) of the present invention used to form a fine pattern () in a processing object () using a first mask layer () includes: a mold () having a concavo-convex structure () on a surface; and a second mask layer () provided on the concavo-convex structure (), wherein in the second mask layer (), a distance (lcc) and a height (h) of the concavo-convex structure () satisfy Formula (1) 0&#x3c;lcc&#x3c;1.0 h, and a distance (lcv) and the height (h) satisfy Formula (2) 0&#x2266;lcv&#x2266;0.05 h.

Layered product for fine pattern formation and method of manufacturing layered product for fine pattern formation

A heat-reactive resist material of the invention is characterized in that the boiling point of the fluoride of the element is 200&#xb0; C. or more. By this means, it is possible to achieve the heat-reactive resist material having high resistance to dry etching using fluorocarbons to form a pattern with the deep groove depth.

Heat-reactive resist material, layered product for thermal lithography using the material, and method of manufacturing a mold using the material and layered product

Growing community of inventors

Tokyo, Japan

Masatoshi Maeda