Toshiba Memory Corporation

Masatoshi Kohno

Masami Masuda

Yuui Shimizu

Junya Matsuno

Kazuyoshi Muraoka

Masahiro Hosoya

A semiconductor storage device includes: a first terminal, a plurality of first and second output buffers, a register, a plurality of first pre-drivers including a plurality of first transistors operating according to a first signal, and a plurality of second pre-drivers including a plurality of second transistors operating according to a second signal. A first output control circuit selects the first pre-drivers in accordance with a third signal obtained by conversion of the second signal. A second output control circuit selects the second pre-drivers in accordance with a fourth signal obtained by conversion the first signal. A third output circuit transmits an output signal to the first and second output circuits.

Semiconductor storage device

According to one embodiment, the amplifier circuit includes a first and second differential amplifier. The first differential amplifier includes first and second transistors, a first current source, and a second current source that is configured to supply a current to the first and second transistors via a first switch element. The second differential amplifier includes third and fourth transistors, a third current source, and a fourth current source that is configured to supply a current to the third and fourth transistors via a second switch element. A first signal is input to the first and third transistors. The first switch elements are controlled by third and fourth signals, respectively. The third signal and the fourth signal are complementary.

Growing community of inventors

Kawaguchi Saitama, Japan

Masatoshi Kohno