Hitachi, Ltd.

Masatoshi Kimura

Ichiro Imaizumi

Toyomasa Koda

Takashi Yamaguchi

Masayoshi Yoshimura

Takeaki Okabe

Keijiro Uehara

Shikayuki Ochi

Isao Yoshida

Isao Shimizu

Kenji Kaneko

Kouzou Sakamoto

Shigeo Ohtaka

Yasuo Nagai

Kazuo Hoya

Kouichiro Satonaka

Koozoo Sakamoto

A semiconductor integrated circuit device includes a high voltage circuit and a high-speed signal processing circuit on the same chip. The high-speed signal processing circuit is made to have a stacked construction thereby to reduce the power consumption. It is also surrounded by ground potential lines so that it may be prevented from being adversely affected by a high voltage used in the high voltage circuit. Each of the high voltage elements composing the high voltage circuit has its principal surface formed at its base and collector regions with guard ring layers of the same conduction types as the respective ones of the high voltage elements. The guard ring layers extend over the elements and the semiconductor body and have lower impurity concentrations than the respective ones of the elements.

Semiconductor integrated circuit device

A method of fabricating semiconductor devices which include vertical elements and control elements. A well is formed by etching in a semiconductor substrate of a first conductivity type, and a first epitaxial layer having a second conductivity type opposite to the first conductivity type is epitaxially grown, followed by etching and/or grinding and/or polishing to fill said well. Further, a second epitaxial layer of the first conductivity type is epitaxially grown on the substrate and on the first epitaxial layer, and an impurity-doped layer of the second conductivity type for isolation is formed in the second epitaxial layer to penetrate therethrough. A first element is formed in the second epitaxial layer in a portion that corresponds to the well, and a second element having a vertical structure and having a current capability higher than that of the first element is formed except a portion of the second epitaxial layer that corresponds to the well.

Method of fabricating semiconductor devices which include vertical

A high-breakdown-voltage semiconductor device wherein a resistor body made of a P-type impurity region is disposed in a surface region of an N-type semiconductor body so as to form a resistor element, a P-type low doped region is disposed around the resistor body, and a plate layer which extends from a high potential electrode of the resistor body covers a main part of the P-type low doped region.

High-breakdown-voltage semiconductor device

A high-breakdown-voltage resistance element comprises a semiconductor body, an impurity layer disposed in a surface region of the semiconductor body to provide a resistor body, a first electrode connected to one end of the resistor body through a contact hole in a first insulating film formed on the surface of the semiconductor body, and a second electrode connected to the other end of the resistor body through another contact hole in the insulating film. A second insulating film is formed on the first and second electrodes, and a third electrode is connected to the first electrode through a contact hole in the second insulating film, so that the entire surface of the resistor body and adjacent areas are covered with the first, second and third electrodes.

High-breakdown-voltage resistance element for integrated circuit with a

A semiconductor device prepared by forming a silicon substrate of one conductor type having a surface of the (100) crystal plane, opening a rectangular window having sides parallel to the &lt;100&gt; crystal axis, etching the interior of the rectangular window with an anisotropic etching solution to form a dent, removing the oxide film and growing an epitaxial layer of a conductor type opposite to that of the substrate on the entire surface of the substrate, and masking the dent with an oxide film and etching the epitaxial layer with an anisotropic etching solution to flatten the surface of the epitaxial layer, and a method for making this semiconductor device.

Method for making semiconductor device

Junction isolated IC with thick EPI portion having sides at least 20

Growing community of inventors

Hachioji, Japan

Masatoshi Kimura