Mitsubishi Denki Kabushiki Kaisha

Fujitsu Corporation

Renesas Electronics Corporation

Fuji Xerox Co., Ltd.

Renesas Technology Corp.

Other

Mitsubishi Chemical Corporation

Mitsubishi Electric Engineering Company, Limited

Fujitsu Client Computing Limited

Director-general of Agency of Industrial Science and Technology

Takao Kawamura

Fujtisu Facilities Limited

Imperial Consultant Inc.

H & B System Inc.

Masatoshi Kimura

Takayuki Shinohara

Masao Konishi

Mitsuhiro Mori

Masahiro Wanou

Koichi Sanpei

Sachio Sasaki

Junzo Nakajima

Yasuyuki Endo

Kunihiko Sato

Kunihiko Hara

Shuichi Suzuki

Shigeo Sakuma

Yoshiya Yoshimoto

Hiroshi Kubo

Akio Harada

Yoshiaki Ohbayashi

Hiroshi Nou

Akio Yano

Sumitaka Takeuchi

Shinichi Masuda

Keisuke Okada

Naoya Takehara

Toru Imai

Hiroshi Okamoto

Tsuyoshi Nishi

Yukio Yamamoto

Kazuhiro Takeda

Toshiki Yamazaki

Toshio Kumamoto

Kaoru Motonami

Tetsuya Matsumura

Hiroki Honda

Takuya Ishikawa

Atsushi Amo

Michio Kawai

Masao Sugiyama

Jun Kodama

Masahiro Nukui

Minobu Yazawa

Eiji Ishioka

Hiroaki Sekikawa

Tomohisa Mikami

Takao Tayama

Takio Ohno

Hiroyuki Komai

Yuichi Miura

Takeshi Kashiwagi

Hidekazu Shoji

Yasuhiro Mikasa

Hiroshi Yamada

Eiji Suzuki

Tomohiro Yamazaki

Shuji Koike

Tetsuo Yamamoto

Kazuya Yamanaka

Yuji Uehara

Takeshi Iwamoto

Masae Kubo

Keiichi Higashitani

Tadashi Matsuda

Kazunori Hirose

Fumitaka Abe

Takashi Toyoda

Hirotoshi Shimizu

Yukio Nishio

Yoshito Kato

Toshio Hashimoto

Kakutaro Suda

Katsushige Hayashi

Yoshinori Wada

Hideki Kamaji

Nobuyuki Tanaka

Yasushi Sugama

Motomichi Shibano

Yasuhiro Ido

Hiroatsu Kazama

Hideki Doi

Seiichi Mukai

Shigenobu Utaka

Yasushi Tateno

Masae Ikeda

Hiroshi Gamo

Toshio Tooda

Hiroyuki Maekawa

Naoki Iwasa

Motonori Ueda

Masayuki Hirose

Mikio Amaya

Masakatsu Horie

Shinichi Mizoguchi

Takashi Kogure

Teturou Nakashima

Kazunori Maruyama

Yumiko Nakamura

Rui Toyota

Masayuki Nakajima

Hideaki Iwasaki

Akiyoshi Iwamasa

An information processing system includes: a plurality of information processing devices each including a processor; and a relay device that connects the information processing devices via an expansion bus and relays communication between the information processing devices. The relay device includes a control unit that represents, for one of the information processing devices, the rest of the information processing devices, and communicates with the one of the information processing devices as an integrated information processing device of the relay device and the rest of the information processing devices.

Information processing system

A first end point and a second end point are provided. The first end point receives data from a root complex of a first platform among platforms, each serving as a computer that executes arithmetic processing. The second end point transfers the data to a root complex of a second platform among the platforms, the data to be transferred being received at the second end point by tunneling from the first end point.

Relay device and information processing system

A computer-implemented method includes obtaining one of image information of a recording medium placed in a sensing area and tag information attached to the recording medium; obtaining environmental control information corresponding to the obtained one of image information and tag information from a storage; and based on the obtained environmental control information, controlling one or more of a light-emitting device, a display device, an audio device, a temperature control device, an air-flow control device, a vibration device, and an aroma emitting device that are disposed around the sensing area.

Information presentation method and information presentation apparatus

In a solid-state imaging device including a plurality of pixels each pixel including a plurality of photodiodes, it is prevented that an incidence angle of incident light on the solid-state imaging device becomes large in a pixel in an end of the solid-state imaging device, causing a difference in output between the two photodiodes in the pixel, and thus autofocus detection accuracy is deteriorated. Photodiodes extending in a longitudinal direction of a pixel allay section are provided in each pixel. The photodiodes in the pixel are arranged in a direction orthogonal to the longitudinal direction of the pixel allay section.

Method of manufacturing semiconductor unit and the semiconductor unit

A semiconductor device is reduced in power consumption, the semiconductor device including a solid-state imaging device that includes pixels each having a plurality of light receiving elements. A pixel having first and second photodiodes is provided with a first transfer transistor that transfers charge in the first photodiode to a floating diffusion capacitance section, and a second transfer transistor that combines charge in the first photodiode and charge in the second photodiode, and transfers the combined charge to the floating diffusion capacitance section. Consequently, the semiconductor device is reduced in power required for activation of each transfer transistor in operation such as imaging with the solid-state imaging device.

Semiconductor device including a solid state imaging device

A memory system is constituted of a file storage flash memory storing a control program required for a control portion and a large amount of data, and a random access memory storing a program used by the control portion and functioning as a buffer memory for received data. Thus, a memory system for a portable telephone capable of storing a large amount of received data at high-speed and allowing reading of the stored data at high-speed is provided.

Memory system for portable telephone

In a semiconductor device in which a plurality of light receiving elements are provided in each of a plurality of pixels that form a solid-state image sensor, a decrease in the performance of the semiconductor device is prevented, the decrease occurring due to an increase in the number of wires. In the pixel having a first photodiode and a second photodiode, a first transfer transistor coupled to the first photodiode and a second transfer transistor coupled to the second photodiode are respectively controlled by the same gate electrode, thereby allowing the number of wires for controlling the first and the second transfer transistors is reduced.

Semiconductor device and manufacturing method thereof

In a solid state image sensor which has two photodiodes juxtaposed in a predetermined direction in each pixel and is formed by carrying out divided exposure, that is, exposure treatment of an entire chip by a plurality of times of exposure, image quality is improved and autofocusing speed is increased. Provided is a solid state image sensor having a first exposure region having a first region and a second exposure region having a second region. They overlap with each other in a third region between the first and second regions. In a pixel formed in the third region, a photodiode formed through a mask for first exposure region is placed at a position closer to the side of the second region than another photodiode formed through a mask for second exposure region is.

Method for manufacturing a solid state image sensor with pixels having photodiodes patterned through overlapping divided exposure

In each pixel having a plurality of photodiodes for one microlens of a plurality of pixels arranged in a pixel array part, the photoelectrically converted electrons are prevented from moving between the photodiodes, thereby to improve the electron isolating characteristic, resulting in improved performances of a semiconductor device. In a well region immediately under between a first Ntype semiconductor region forming a first photodiode in a pixel and a second Ntype semiconductor region forming a second photodiode in the pixel, an isolation region higher in impurity density than the well region is formed.

Method for manufacturing semiconductor device and semiconductor device

Image sensor having overlapping exposure regions and pixels with misaligned photodiodes

The performance of a solid state image sensor which is formed by performing divided exposure that exposes the entire chip by a plurality of times of exposure and in which each of a plurality of pixels arranged in a pixel array portion has a plurality of photodiodes is improved. In the divided exposure performed when the solid state image sensor is manufactured, a dividing line that divides an exposure region is defined to be located between a first photodiode and a second photodiode aligned in a first direction in an active region in a pixel and is defined to be along a second direction perpendicular to the first direction.

Manufacturing method of semiconductor device and semiconductor device

A pairing apparatus includes first and second wireless devices, each of which has a docking mechanism for docking the wireless devices with each other, wherein each of the wireless devices includes a pairing request detecting unit to detect a request for pairing, a docking detecting unit to detect docking of the wireless devices, and a pairing setting unit to perform a pairing setting process for pairing the wireless devices, in response to the request for pairing, wherein a check is made as to whether the wireless devices are in a docked state at both a time of the pressing of the pairing button and a time of the releasing of the pairing button, and the request for pairing is made from one of the wireless devices to the other upon a result of the check indicating that the wireless devices are in the docked state at both of the times.

Pairing apparatus

Method of manufacturing an image sensor using multiple exposures

Growing community of inventors

Kawasaki, Japan

Masatoshi Kimura