Tokyo Electron Limited

Masatoshi Kasahara

Teruomi Minami

Fumihiro Kamimura

Ikuo Sunaka

Takashi Yabuta

Shinichiro Shimomura

Daisuke Saiki

Naohiro Iwanaga

Keiichiro Uchino

Hidetoshi Nakao

A processing liquid supply system includes a tank that stores a processing liquid supplied from a processing liquid supply, a circulation passage that is connected to the tank, a plurality of supply passages that is connected to the circulation passage and supplies the processing liquid to each of a plurality of liquid processing units that perform a liquid processing on a substrate, a first pump filter set that is a combination of a first pump and a plurality of first filters provided downstream of the first pump, and a second pump filter set that is a combination of a second pump and a plurality of second filters provided downstream of the second pump. The first pump filter set and the second pump filter set are arranged in series in the circulation passage such that the first pump filter set is located upstream of the second pump filter set.

Processing liquid supply system and operation method thereof

A substrate processing method includes: increasing a temperature of a substrate by heating the substrate; after the increasing the temperature of the substrate, forming a liquid film of a pre-wetting liquid on a first surface of the substrate by supplying the pre-wetting liquid to the first surface of the substrate while heating and rotating the substrate at a first rotational speed; after the forming the liquid film, processing the first surface of the substrate with a chemical liquid by supplying the chemical liquid to the first surface of the substrate while heating and rotating the substrate at a second rotational speed that is lower than the second rotational speed; and after the processing the first surface of the substrate, decreasing the temperature of the substrate.

Substrate processing method and substrate processing apparatus

A substrate processing apparatus includes: at least one processing part for etching a polysilicon film or an amorphous silicon film formed on a substrate using an alkaline chemical liquid; a reservoir configured to recover and store the chemical liquid used in the at least one processing part; processing lines configured to supply the chemical liquid stored in the reservoir to the at least one processing part; a circulation line configured to take out the chemical liquid from the reservoir and to return the same to the reservoir; and a first gas supply line connected to the circulation line and configured to supply an inert gas to the circulation line. The circulation line includes an ejection port configured to eject a mixed fluid of the inert gas supplied by the first gas supply line and the chemical liquid taken out from the reservoir into the chemical liquid stored in the reservoir.

Substrate processing apparatus and substrate processing method

A process liquid changing method is provided for changing process liquids in a substrate processing apparatus including storage tank, a circulation line with a circulation pump, and a process liquid supply nozzle connected to the circulation line through a branch line. The method includes: discharging the process liquid in the storage tank; discharging a process liquid remaining in the circulation line from a drain connected to the circulation line at a second position of the circulation line, while supplying a purge gas to the circulation line at a first position of the circulation line, wherein the first position is located upstream of a junction area where the branch line is connected to the circulation line, and the second position is located downstream of the junction area and upstream of the storage tank; and supplying a process liquid into the storage tank.

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Koshi, Japan

Masatoshi Kasahara