Hamamatsu-photonics K.k.

Masatoshi Ishihara

Hiroo Yamamoto

Nao Inoue

Seiichiro Mizuno

Hirokazu Yamamoto

Tomofumi Suzuki

Hironori Takahashi

Yoshihisa Warashina

Ryusuke Kitaura

Masahiro Yamazaki

Hideo Takahashi

Yoshiaki Ohshige

The signal processing board includes a plurality of signal processing circuits configured to process signals output from a plurality of pixels of an infrared detecting element. The signal processing board includes an element placement area where the infrared detecting element is placed, and a circuit placement area positioned outside the element placement area to surround the element placement area when viewed from a direction orthogonal to the signal processing board. The signal processing board includes a plurality of insulating layers that are stacked on a surface side opposing the semiconductor substrate. A plurality of signal processing circuits are placed in the circuit placement area. A heat-conducting layer is placed to be positioned on at least one of the insulating layers and in the element placement area, in the signal processing board. The heat-conducting layer has a heat conductivity that is higher than a heat conductivity of the insulating layers.

Infrared detection device

A THz bolometer detector includes a directional antennathat receives a THz wave having a wavelength &#x3bb; and radiates the received THz wave, a reception antennathat is provided so as to face the directional antenna, and a bolometerthat detects heat generation due to a current flowing in the reception antenna. The directional antennaoverlaps the reception antennain plan view, and a longitudinal length of the directional antennais set to be less than a longitudinal length of the reception antenna

THz bolometer detector

A first semiconductor substrateand a second semiconductor substrateare different in material, and therefore have sensitivities to incident light of mutually different wavelength bands. Respective photodiodes of photodiode arrays are connected to amplifiers of the first semiconductor substrate. According to this method, the second semiconductor substrateis separated from the wafer by etching the second semiconductor substrateand then dicing a deepest portion of the etched groove. The density of crystal defects in a side surface produced by etching is smaller than the density of crystal defects in a side surface produced by dicing. Because a photodiode located in an end portion of the second semiconductor substratedoes not need to be removed, a reduction in the number of photodiodes can be suppressed.

Photodiode array module and method for manufacturing same

This photodiode array module includes a first semiconductor substratehaving a first photodiode array that is sensitive to light of a first wavelength band, a second semiconductor substrate' having a second photodiode array that is sensitive to light of a second wavelength band, and a third semiconductor substratewhich is formed with a plurality of amplifiers AMP and on which the first and second semiconductor substrates&#x2032; are placed side by side without overlapping, and which connects each photodiode to the amplifier AMP via a bump. In adjacent end portions of the first semiconductor substrateand the second semiconductor substrate&#x2032;, stepped portions are formed, which thus allows performing measurement with low noise even when respective pixels are aligned successively over both substrates.

Photodiode array module and manufacturing method for same

In a photodetector, a low-resistance Si substrate, an insulating layer, a high-resistance Si substrate, and an Si photodiodeconstruct a hermetically sealed package for an InGaAs photodiodeplaced within a recess, while an electric passage partof the low-resistance Si substrateand a wiring filmachieve electric wiring for the Si photodiodeand InGaAs photodiode. While a p-type regionof the Si photodiodeis disposed in a part on the rear faceside of an Si substrate, a p-type regionof the InGaAs photodiodeis disposed in a part on the front faceside of an InGaAs substrate

Photodetector for detecting energy line in a first wavelength region and in a second wavelength region

A photodetector includes a plurality of photodetecting elements which output electrical signals corresponding to the intensities of light that entered these; a signal processing element which is opposed to the photodetecting elements and is connected to the photodetecting elements via conductive bumps, and into which electrical signals output from the photodetecting elements are input; a resin which has electrical insulation and is filled in at least at the gaps between the photodetecting elements and the signal processing element; and a light shielding member arranged so as to cover the surfaces exposed from the photodetecting elements and the signal processing element in the resin.

Photodetector

In a signal read circuit including a plurality of circuit rows each having a charge amplifier connected to a photoelectric conversion element PD and a CDS circuit S for performing correlated double sampling for an output from the charge amplifier, a dummy circuit row DMY having the same configuration as a circuit row SLT is connected in parallel with this circuit row SLT. By calculating the difference between these circuit rows connected in parallel, offset variations generated in the two circuit rows SLT and DMY can be removed.

Signal read circuit

A light chopper periodically transmits and blocks light, and first a dark current cancelling circuit determines an approximate mean value of the dark current from a photodiode when the light is blocked and cancels thus the mean value from the current signal fed into the integrated circuit, add to this, a differential arithmetic circuit that subtracts the remaining dark current component from the output of the integration circuit, thus the remaining signal indicates only the signal current component.

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Hamamatsu, Japan

Masatoshi Ishihara