Kabushiki Kaisha Toshiba

Masatoshi Higuchi

Hideaki Hirabayashi

Tomomi Harano

Hisashi Kaneko

Nobuo Hayasaka

Yasutaka Sasaki

Yasutada Nakagawa

Eijiro Koike

The hydrogen production apparatus includes: a rectifier supplied with first electrical power from outside, and that outputs direct-current second electrical power; an electrolyzer supplied with the second electrical power and that carries out electrolysis of an alkaline aqueous solution; a pure water tank that retains a pure water; a pure water pipe connected between the pure water tank and an electrolyzer, allowing the pure water to be distributed from the pure water tank to the electrolyzer; an inert gas cylinder that contains an inert gas; and a first valve connected between the inert gas cylinder and the pure water pipe, is the first valve being closed when the first electrical power is supplied, and being open when the first electrical power is not supplied. The inert gas is introduced into the pure water pipe by opening the first valve.

Hydrogen production apparatus and hydrogen production system

A polishing apparatus comprise a lower surface plate rotatably provided and having a polishing surface for polishing an object, and an upper surface plate for pressing the object against the lower surface plate, wherein the polishing surface can be dressed by a dresser comprising a dressing member approachable to and separable from the polishing surface, the dressing member having a dressing surface to be brought into contact with the polishing surface, the dressing surface being shaped as a hollow oval.

Dresser, polishing apparatus and method for producing an article

The present invention provides a polishing method including the steps of forming a film made of material containing a metal as a main component over a substrate having depressed portions on a surface thereof so as to fill the depressed portions with the film, and polishing the film by a chemical mechanical polishing method using a polishing agent containing a chemical agent responsible for forming a protection film on a surface of the film by reacting with the material containing a metal as a main component, thereby forming a conductive film in the depressed portions. The present invention also provides a polishing agent, which is used in forming a film made of material containing a metal as a main component in depressed portions of a substrate having depressed portions on a surface thereof by using a chemical mechanical polishing method, including a chemical agent responsible for forming a protection film on the surface of a substrate to be polished by reacting with the material containing a metal as a main component.

Polishing agent and polishing method using the same

Disclosed is a copper-based metal polishing solution which hardly dissolves a Cu film or a Cu alloy film when the film is dipped into the solution, and has a dissolution velocity during polishing several times higher than that during dipping. This copper-based metal polishing solution contains at least one organic acid selected from aminoacetic acid and amidosulfuric acid, an oxidizer, and water.

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Kawasaki, Japan

Masatoshi Higuchi