Murata Manufacturing Co., Ltd.

Renesas Electronics Corporation

Masatoshi Hase

Satoshi Tanaka

Kazuo Watanabe

Takashi Soga

Takayuki Tsutsui

Masahiro Ito

Hidetoshi Matsumoto

Yuri Honda

Norio Hayashi

Kiichiro Takenaka

Fumio Harima

Masayuki Aoike

Shinnosuke Takahashi

Hitoshi Akamine

Yuuri Honda

Yasunari Umemoto

Shigeki Koya

Satoshi Arayashiki

Akira Kuriyama

Kenichi Shimamoto

Masao Kondo

Fuminori Morisawa

Yusuke Tanaka

Kyoichi Takahashi

Kenji Tahara

Mitsunori Samata

Shun Imai

Syunji Yoshimi

Shaojun Ma

Kazuhiro Ikarashi

Seiko Netsu

Ikuma Ohta

Kanji Hayata

A power amplifier circuit includes amplifying transistors electrically cascade-connected, amplifying a signal supplied to a base, and outputting an amplified signal; a first resistive element having end parts connected to the base of a first amplifying transistor; a second resistive element having end parts connected to the base of a second amplifying transistor, which is an amplifying transistor located closer to an input side than the first amplifying transistor; a first bias supplying transistor having an emitter connected to one of the end parts of the first resistive element; a second bias supplying transistor having an emitter connected to one of the end parts of the second resistive element; and a bias current compensation transistor having a base connected to the end part of the first resistive element, a collector connected to the end part of the second resistive element, and an emitter connected to ground.

Power amplifier circuit

A power amplifier module includes a first amplifier that amplifies a power level of a first input signal in a predetermined frequency band and outputs a first signal of a first power level; a first impedance transformer connected to the first amplifier and including a transmission line transformer; a second amplifier that amplifies a power level of a second input signal in the predetermined frequency band and outputs a second signal of the first power level; a second impedance transformer connected to the second amplifier and including a transmission line transformer; and a combiner that combines the first signal inputted through the first impedance transformer and the second signal inputted through the second impedance transformer into an output signal of a second power level larger than the first power level and includes a transmission line transformer.

Power amplifier module

An output matching circuit includes: a converter electrically connected to an output end of a power amplifier element to convert an impedance of the output end to an impedance higher than the impedance of the output end by magnetic coupling; and a first filter circuit electrically connected between the output end of the power amplifier element and the converter to make a short circuit in a frequency band different from a predetermined transmission frequency band.

Output matching circuit and power amplifier circuit

The present disclosure facilitates impedance matching between a power amplifier and filters. A radio-frequency circuit includes a power amplifier, a plurality of transmit filters, a switch, a plurality of first matching networks, and a second matching network. The switch switches the plurality of transmit filters to be coupled to the power amplifier. The plurality of first matching networks are coupled between the plurality of transmit filters and the switch. The second matching network is coupled between the power amplifier and the switch. The second matching network includes a transmission line transformer.

Radio-frequency circuit and communication device

A power amplifier circuit includes an amplifier transistor which amplifies a radio frequency signal applied to its base and outputs the amplified signal; a resistance element having a first end, and a second end electrically connected to the base of the amplifier transistor; a first bias transistor having a collector to which a first voltage is applied, a base to which a first bias voltage is applied, and an emitter electrically connected to the first end of the resistance element and which supplies a bias current to the base of the amplifier transistor through the resistance element; and a second bias transistor having an emitter electrically connected to the emitter of the first bias transistor and the first end of the resistance element, a base to which a second bias voltage is applied, and a collector to which a second voltage lower than the first voltage is applied.

Power amplifier circuit, power amplifier device, and RF circuit module

A power amplifier that includes a substrate, and an emitter layer, a base layer, and a collector layer laminated in this order on a major surface of the substrate includes an electrical insulator provided adjacent to the emitter layer, an emitter electrode provided between the substrate and both the emitter layer and the electrical insulator, a base electrode electrically connected to the base layer, and a collector electrode electrically connected to the collector layer. The emitter electrode, the electrical insulator, and the base layer are provided between the substrate and the base electrode in a direction perpendicular to the major surface of the substrate.

Power amplifier

A first primary line has a first node at one end and a third node at another end and transmits a radio-frequency signal between the first node and the third node. A second primary line has a second node at one end and a fourth node at another end and transmits a radio-frequency signal between the second node and the fourth node. A first secondary line has a portion connected to the second node and is electromagnetically coupled to the first primary line. The second secondary line has a portion connected to the first node and has another end connected to a portion of the first secondary line. The second secondary line is electromagnetically coupled to the second primary line. A first capacitor is connected in parallel to a portion of the second primary line or a portion of the second secondary line.

Impedance converting circuit and amplifier module

A first transmission line and a third transmission line are disposed at different positions in a thickness direction of a substrate. The third transmission line includes a first end portion connected to one end portion of the first transmission line, and a second end portion that is grounded. The first transmission line is electromagnetically coupled to the third transmission line. The first transmission line has a coil pattern and the third transmission line has a partially open loop pattern.

Transmission line transformer and amplifying circuit

A power amplifier unit includes a power amplifier circuit that amplifies a radio-frequency input signal, a first impedance matching circuit that performs impedance matching for an output signal of the power amplifier circuit, a second-order harmonic termination circuit on an output side of the first impedance matching circuit and that reflects at least part of even-ordered and odd-ordered harmonics contained in a signal input from the first impedance matching circuit to output the at least part of the harmonics from an input terminal as a radio-frequency signal and outputs a radio-frequency signal containing a fundamental and the remainder of the harmonics from an output terminal, and a filter that is on a subsequent stage of the second-order harmonic termination circuit, that attenuates at least part of the even-ordered and odd-ordered harmonics, and that outputs a radio-frequency signal including the fundamental and the remainder of the even-ordered and odd-ordered harmonics.

Power amplifier unit

A bond layer including at least one metal region in a plan view is disposed on a surface layer portion of a substrate formed from a semiconductor. A semiconductor element is disposed on the bond layer and includes a first transistor disposed on a first metal region that is a metal region as the at least one metal region of the bond layer and including a collector layer electrically coupled to the first metal region, a base layer disposed on the collector layer, and an emitter layer disposed on the base layer. A first emitter electrode is disposed on the emitter layer of the first transistor. A first conductor protrusion is disposed on the first emitter electrode. The thermal conductivity of the semiconductor material of the surface layer portion is higher than that of each of the collector layer, the base layer, and the emitter layer of the first transistor.

Semiconductor device

A power amplifier circuit includes an amplifier that receives an input signal with an alternating current and outputs an output signal obtained by amplifying power of the input signal to a first node; an inductive element that is connected between the first node and a second node; and a variable capacitor that is connected between the second node and a reference potential, and whose electrostatic capacitance increases as power of the output signal increases.

Provided is a power amplifier circuit that can increase output power and also reduce the effect of intermodulation distortion. The power amplifier circuit includes a power divider, a distortion compensation circuit provided on the secondary path, a power combiner, and a first amplifier configured. The distortion compensation circuit includes a generation circuit configured to generate the second-harmonic wave of the input signal, a filter circuit configured to attenuate the fundamental wave and pass the second-harmonic wave, and a phase adjustment circuit configured to adjust the phase of the second-harmonic wave.

A power amplifier circuit includes a substrate and a semiconductor chip disposed on or above the substrate. The semiconductor chip includes a power amplifier unit that amplifies an RF signal, a ground terminal to which a ground of the power amplifier unit is coupled, and a first circuit element having a first end electrically coupled to the ground terminal without any portion outside the semiconductor chip interposed therebetween, and having a second end. The substrate includes a second circuit element having a first end electrically coupled to an output of the power amplifier unit and a second end electrically coupled to the second end of the first circuit element. The first and second circuit elements constitute a harmonic wave termination circuit. The harmonic wave termination circuit reflects, to the power amplifier unit, a harmonic wave component of the amplified RF signal output from the power amplifier unit.

An active balun circuit includes first and second transistors having emitters electrically coupled to each other and configured to output differential signals and a circuit element coupled between the connection point of the emitter of the first transistor and the emitter of the second transistor and a reference potential. The impedance of the circuit element at a particular frequency of the input signal appears significantly larger than impedances at other frequencies. An input signal from an input terminal is inputted to the base of the first transistor. The reference potential is applied to the base of the second transistor. A supply voltage is applied to the collector of the first transistor and the collector of the second transistor. A signal from the collector of the first transistor and a signal from the collector of the second transistor are outputted as the differential signals.

Active balun circuit, power amplifier circuit, and power amplifier module

A first transmission line and a second transmission line that are connected in series to each other are disposed at different positions in a thickness direction of a substrate. A third transmission line is disposed between the first transmission line and the second transmission line in the thickness direction of the substrate. The third transmission line includes a first end portion connected to one end portion of the first transmission line, and a second end portion that is AC-grounded. The first transmission line and the second transmission line are electromagnetically coupled to the third transmission line.

Growing community of inventors

Kyoto, Japan

Masatoshi Hase