Rohm Co., Ltd.

Tokyo Electron Limited

Rohm Gmbh

Masatoshi Aketa

Yuki Nakano

Yuta Yokotsuji

Seigo Mori

Takui Sakaguchi

Kenji Yamamoto

Minoru Nakagawa

Tsunenobu Kimoto

Kazunori Fuji

Masaya Ueno

Yoshikatsu Miura

Takuma Kobayashi

Takashi Nakamura

Jun Yoshikawa

Heiji Watanabe

Takayoshi Shimura

Takuji Hosoi

Shuhei Mitani

Mineo Miura

Shuji Azumo

Noriaki Kawamoto

Yusaku Kashiwagi

Ikuo Sawada

Eisuke Morisaki

Hirokatsu Kobayashi

Hirokazu Asahara

Yuichiro Nanen

A semiconductor device includes a semiconductor layer of a first conductivity type having a first main surface at one side and a second main surface at another side, a trench gate structure including a gate trench formed in the first main surface of the semiconductor layer, and a gate electrode embedded in the gate trench via a gate insulating layer, a trench source structure including a source trench formed deeper than the gate trench and across an interval from the gate trench in the first main surface of the semiconductor layer, a source electrode embedded in the source trench, and a deep well region of a second conductivity type formed in a region of the semiconductor layer along the source trench, a ratio of a depth of the trench source structure with respect to a depth of the trench gate structure being not less than 1.5 and not more than 4.0, a body region of the second conductivity type formed in a region of a surface layer portion of the first main surface of the semiconductor layer between the gate trench and the source trench, a source region of the first conductivity type formed in a surface layer portion of the body region, and a drain electrode connected to the second main surface of the semiconductor layer.

Semiconductor device

A semiconductor device includes a semiconductor layer having a first surface and a second surface, a unit cell including a diode region of a first conductivity type formed in a surface layer portion of the first surface of the semiconductor layer, a well region of a second conductivity type formed in the surface layer portion of the first surface of the semiconductor layer along a peripheral edge of the diode region, and a first conductivity type region formed in a surface layer portion of the well region, a gate electrode layer facing the well region and the first conductivity type region through a gate insulating layer and a first surface electrode covering the diode region and the first conductivity type region on the first surface of the semiconductor layer, and forming a Schottky junction with the diode region and an ohmic junction with the first conductivity type region.

Semiconductor device having a gate insulating layer

A method for manufacturing a semiconductor device includes a step of preparing a semiconductor wafer source which includes a first main surface on one side, a second main surface on the other side and a side wall connecting the first main surface and the second main surface, an element forming step of setting a plurality of element forming regions on the first main surface of the semiconductor wafer source, and forming a semiconductor element at each of the plurality of element forming regions, and a wafer source separating step of cutting the semiconductor wafer source from a thickness direction intermediate portion along a horizontal direction parallel to the first main surface, and separating the semiconductor wafer source into an element formation wafer and an element non-formation wafer after the element forming step.

Semiconductor device manufacturing method and wafer-attached structure

An SiC semiconductor device includes an SiC semiconductor layer having a first main surface and a second main surface, a gate electrode embedded in a trench with a gate insulating layer, a source region of a first conductivity type formed in a side of the trench in a surface laver portion of the first main surface, a body region of a second conductivity type formed in a region at the second main surface side with respect to the source region in the surface layer portion of the first main surface, a drift region of the first conductivity type formed in a region at the second main surface side in the SiC semiconductor layer, and a contact region of the second conductivity type having an impurity concentration of not more than 1.0×10cmand formed in the surface layer portion of the first main surface.

SiC semiconductor device

The semiconductor device of the present invention includes a first conductivity type semiconductor layer made of a wide bandgap semiconductor and a Schottky electrode formed to come into contact with a surface of the semiconductor layer, and has a threshold voltage Vof 0.3 V to 0.7 V and a leakage current Jof 1×10A/cmto 1×10A/cmin a rated voltage V.

An electronic component includes a substrate having a first main surface on one side and a second main surface on the other side, a chip having a first chip main surface on one side and a second chip main surface on the other side, and a plurality of electrodes formed on the first chip main surface and/or the second chip main surface, the chip being arranged on the first main surface of the substrate, a sealing insulation layer that seals the chip on the first main surface of the substrate such that the second main surface of the substrate is exposed, the sealing insulation layer having a sealing main surface that opposes the first main surface of the substrate, and a plurality of external terminals formed to penetrate through the sealing insulation layer so as to be exposed from the sealing main surface of the sealing insulation layer, the external terminals being respectively electrically connected to the plurality of electrodes of the chip.

Electronic component and semiconductor device

A semiconductor device includes a semiconductor layer of a first conductivity type having a main surface, a diode region of the first conductivity type formed in a surface layer portion of the main surface of the semiconductor layer, a carrier trapping region including crystal defects and formed along a peripheral edge of the diode region in the surface layer portion of the main surface of the semiconductor layer, and an anode electrode formed on the main surface of the semiconductor layer and forming a Schottky junction with the diode region.

Semiconductor device having a carrier trapping region including crystal defects

A semiconductor device includes a SiC semiconductor layer that has a carbon density of 1.0×10cmor more, a SiOlayer that is formed on the SiC semiconductor layer and that has a connection surface contiguous to the SiC semiconductor layer and a non-connection surface positioned on a side opposite to the connection surface, a carbon-density-decreasing region that is formed at a surface layer portion of the connection surface of the SiOlayer and in which a carbon density gradually decreases toward the non-connection surface of the SiOlayer, and a low carbon density region that is formed at a surface layer portion of the non-connection surface of the SiOlayer and that has a carbon density of 1.0×10cmor less.

Semiconductor device with carbon-density-decreasing region

A semiconductor device includes a semiconductor layer having a first main surface on one side and a second main surface on the other side, a unit cell including a diode region of a first conductivity type formed in a surface layer portion of the first main surface of the semiconductor layer, a well region of a second conductivity type formed in the surface layer portion of the first main surface of the semiconductor layer along a peripheral edge of the diode region, and a first conductivity type region formed in a surface layer portion of the well region, a gate electrode layer facing the well region and the first conductivity type region through a gate insulating layer and a first main surface electrode covering the diode region and the first conductivity type region on the first main surface of the semiconductor layer, and forming a Schottky junction with the diode region and an ohmic junction with the first conductivity type region.

The semiconductor device of the present invention includes a first conductivity type semiconductor layer made of a wide bandgap semiconductor and a Schottky electrode formed to come into contact with a surface of the semiconductor layer, and has a threshold voltage Vof 0.3 V to 0.7 V and a leakage current Jof 1&#xd7;10A/cmto 1&#xd7;10A/cmin a rated voltage V.

A semiconductor device includes a SiC semiconductor layer that has a carbon density of 1.0&#xd7;10cmor more, a SiOlayer that is formed on the SiC semiconductor layer and that has a connection surface contiguous to the SiC semiconductor layer and a non-connection surface positioned on a side opposite to the connection surface, a carbon-density-decreasing region that is formed at a surface layer portion of the connection surface of the SiOlayer and in which a carbon density gradually decreases toward the non-connection surface of the SiOlayer, and a low carbon density region that is formed at a surface layer portion of the non-connection surface of the SiOlayer and that has a carbon density of 1.0&#xd7;10cmor less.

Growing community of inventors

Kyoto, Japan

Masatoshi Aketa