International Business Machines Corporation

Masatomo Takeichi

Hiroaki Kitahara

Evan G Colgan

Takatoshi Tsujimura

Kai R Schleupen

The present invention discloses a thin film transistor and a process for forming thereof by a high anisotropy etching process. A thin film transistor according to the present invention comprises a transistor element including a gate electrode, a gate insulating layer, a semiconductor layer, and source and drain electrodes; a passivation layer being deposited on the layers and having first openings for contact holes; and an interlayer insulator extending along with the passivation layer and having second openings for the contact holes, the first openings and the second openings being aligned each other over the substrate, wherein an electrical conductive layer is deposited on an inner wall of the contact hole and the inner wall is formed by the first and second openings tapered smoothly and continuously through an anisotropic etching process.

Thin film transistor formed by an etching process with high anisotropy

A liquid crystal device (and method for forming the LCD) includes a first transparent substrate having a first surface and a second surface, and a second transparent substrate having a first surface and a second surface. The first transparent substrate and the second transparent substrate are arranged such that the first surface of the first transparent substrate faces the first surface of the second transparent substrate, and a liquid crystal material is enclosed between the first surface of the first transparent substrate and the first surface of the second transparent substrate. A pixel array, in which a plurality of pixel regions are arranged in row and column directions and data signals are applied to the pixel regions through data lines, is formed on the first surface of the first transparent substrate and the first surface of the second transparent substrate.

Liquid crystal display device and method for fabricating the same

A method for etching a hydrogenated amorphous silicon layer and a metal layer formed thereon in a dry etching tool, is described incorporating the steps of selectively etching the metal layer on the hydrogenated amorphous silicon layer and etching the hydrogenated amorphous silicon layer. The invention overcomes the problem of performing sequential dry etching of a metal layer and a hydrogenated amorphous silicon underlayer in a single etching tool.

Growing community of inventors

Shiga-ken, Japan

Masatomo Takeichi