Hamamatsu-Photonics K.k.

Shizuoka University

Japan Science and Technology Agency

Masatomo Sumiya

Shunro Fuke

Tokuaki Nihashi

Minoru Hagino

Mamoru Yoshimoto

Minoru Hamamatsu Photonics K K Hagino

Tokuaki Hamamatsu Photonics K K Nihashi

The object is to provide a photoelectric surface member which allows higher quantum efficiency. In order to achieve this object, a photoelectric surface memberis a crystalline layer formed by a nitride type semiconductor material, and comprises a nitride semiconductor crystal layerwhere the direction from the first surfaceto the second surfaceis the negative c polar direction of the crystal, an adhesive layerformed along the first surfaceof the nitride semiconductor crystal layer, and a glass substratewhich is adhesively fixed to the adhesive layersuch that the adhesive layeris located between the glass substrateand the nitride semiconductor crystal layer

Process for producing layered member and layered member

The present invention provides a method for growing a thin nitride film over a substrate and a thin nitride film device, in which the polarity of the thin nitride film can be controlled by a low temperature process. In the method for growing the thin nitride film over a substrate, a Ga face () and a N face () are formed over a c face sapphire (AlO) substrate (), the Ga face () growing in +c face, and the N face () growing in &#x2212;c face.

Method for growing thin nitride film onto substrate and thin nitride film device

Disclosed is a photoelectric surface including: a first group III nitride semiconductor layer that produces photoelectrons according to incidence of ultraviolet rays; and a second group III nitride semiconductor layer provided adjacent to the first group III nitride semiconductor layer and made of a thin-film crystal having c-axis orientation in a thickness direction, the second group III nitride semiconductor layer having an Al composition higher than that of the first group III nitride semiconductor layer.

Photoelectric surface and photodetector

In a method of forming a single crystal semiconductor directly on a metal layer, a metal layer is epitaxially grown on a surface an electrically insulating substrate having a single crystal structure, and a single crystal semiconductor layer is epitaxially grown on the metal layer. Particularly, on a c-face of a sapphire substrate, a platinum layer is epitaxially grown in a crystal orientation of (111) by sputtering, while the sapphire substrate is heat at about 400-700&deg; C. After annealing at 600-900&deg; C., a buffer layer made of gallium nitride is epitaxially grown on the platinum layer with a thickness of 500-2000 &angst; by MOVPE, while the sapphire substrate is heated at about 600&deg; C. Finally, a single crystal gallium nitride layer is epitaxially grown on the buffer layer by MOVPE, while the sapphire substrate is heated at about 1000&deg; C.

Growing community of inventors

Tsukuba, Japan

Masatomo Sumiya