Murata Manufacturing Co., Ltd.

Masatomi Harada

Takeshi Kagawa

Hiroshi Matsubara

Junko Izumitani

Nobuhiro Ishida

Korekiyo Ito

Yuta Imamura

Masaki Takeuchi

A semiconductor device is provided that includes a substratewith first and second opposing main surfaces, a circuit layer disposed on the first main surface, and a first resin body on a surface of the circuit layer opposite from the substrate. The circuit layer includes first and second electrode layers on a side of the semiconductor substrate, a dielectric layer disposed between the electrode layers, a first outer electrode electrically connected to the first electrode layer and extended to the surface of the circuit layer, and a second outer electrode electrically connected to the second electrode layer and extended to the surface of the circuit layer. The first resin body is between the first and second outer electrodes in a plan view, and in sectional view, a tip end of the first resin body is positioned higher than tip ends of the first and second outer electrodes.

Semiconductor device and module

A capacitor that includes a substrate; a capacitor structure including a lower electrode on the substrate, a dielectric film on the lower electrode and having a via hole, and an upper electrode on the dielectric film; a first terminal electrode in the via hole and electrically connected to the lower electrode; and a second terminal electrode electrically connected to the upper electrode. The width of the via hole of the dielectric film is less than or equal to twice the film thickness of the first terminal electrode.

Capacitor

A semiconductor device that includes: a substrate having a first main surface and a second main surface opposite to each other in a thickness direction; a circuit layer on the first main surface of the substrate, the circuit layer having a first electrode layer, a second electrode layer, a dielectric layer between the first electrode layer and the second electrode layer, a first outer electrode and a second outer electrode each extending to a surface of the circuit layer opposite to the substrate; and a first resin body at each of four corners of the substrate in a plan view in the thickness direction, and wherein, in the thickness direction, a top end of the first resin body on the side opposite to the substrate is positioned higher than top ends of the first outer electrode and the second outer electrode on the side opposite to the substrate.

A capacitor that includes: a substrate; a first electrode layer on the substrate, the first electrode layer including a first principal surface facing the substrate, and a second principal surface opposite the first principal surface; a dielectric film on the first electrode layer and covering an end portion of the first electrode layer; a second electrode layer on the dielectric film, the second electrode layer including a third principal surface facing the dielectric film, a fourth principal surface opposite the third principal surface, and a side surface joining the third principal surface and the fourth principal surface, wherein at least part of the side surface of the second electrode layer has a tapered shape which is inclined inward from the third principal surface to the fourth principal surface.

Semiconductor device

A semiconductor device includes a semiconductor substrate having first and second main surfaces that oppose each other in a thickness direction, and a circuit layer disposed on the first main surface. The circuit layer includes a first electrode layer on a side of the semiconductor substrate, a second electrode layer that faces the first electrode layer, a dielectric layer disposed between the electrode layers, and a first outer electrode electrically connected to the first electrode layer through an opening in the dielectric layer. An end portion of the dielectric layer on a side of the first region is in contact with the first electrode layer, and in the dielectric layer, a size of the end portion in the thickness direction is smaller than a size of an inter-electrode portion between the first and second electrode layers in the thickness direction.

Semiconductor device and capacitance device

A capacitor that includes a substrate having a surface; a lower electrode opposing the surface of the substrate; a dielectric film on the lower electrode; an upper electrode on the dielectric film; a protective layer on the lower electrode, the dielectric film, and the upper electrode, the protective layer defining a through-hole exposing at least one of the lower electrode and the upper electrode; at least one protrusion in the through-hole; and an outer electrode covering the through-hole and the at least one protrusion.

Capacitor having a through-hole exposing an electrode and at least one protrusion in the through-hole

A capacitor that includes a substrate, a lower electrode on the substrate, a dielectric film on the lower electrode, an upper electrode on a part of the dielectric film, a protective layer that covers the lower electrode and the upper electrode, and an external electrode that penetrates the protective layer. The external electrode is formed only in a region defined by a periphery of the upper electrode in a plan view of the capacitor viewed from an upper surface thereof towards the substrate.

A plurality of capacitors and a holding body constructed to hold the plurality of capacitors. Each of the plurality of capacitors includes a semiconductor substrate, a first electrode layer, a dielectric layer, a second electrode layer, and an outer electrode. Among a first capacitor and a second capacitor of the plurality of capacitors, the second capacitor has a shape different from a shape of the first capacitor in at least one of the first electrode layer, the second electrode layer, and the outer electrode.

Capacitor cluster having capacitors with different shapes

A capacitor that includes a substrate having a first principal surface and a second principal surface, a lower electrode on the first principal surface, a dielectric film on the lower electrode, and an upper electrode on the dielectric film, wherein at least one of the lower electrode and the upper electrode has, in plan view of the first principal surface, a first region having a rectangular shape, and at least one second region protruding from at least one side of the first region.

A capacitor that includes a lower electrode; a dielectric film; an upper electrode; a first protective film that has a first through hole that opens to the upper electrode and a second through hole that opens to the lower electrode, and has a first upper surface; a second protective film that has a second upper surface located higher than the first upper surface of the first protective film; a first terminal electrode electrically connected to the upper electrode through the first through hole, and extends to at least the second upper surface of the second protective film; and a second terminal electrode electrically connected to the lower electrode through the second through hole, and extends to at least the second upper surface of the second protective film.

Thin film capacitor and method of manufacturing the same

A capacitor having a substrate, a first electrode layer, a dielectric layer, a second electrode layer, and first and second outer electrodes. The substrate has a first main surface and a second main surface opposite to the first main surface. The first electrode layer is on the first main surface of the substrate. The dielectric layer is on at least part of the first electrode layer. The second electrode layer is on at least part of the dielectric layer. The first outer electrode is electrically connected to the first electrode layer and the second outer electrode is electrically connected to the second electrode layer. At least one of the first electrode layer and the first outer electrode and the second electrode layer and the second outer electrode are in contact with each other at a first contact surface. The first contact surface includes a first uneven surface portion.

Capacitor and method for manufacturing the same

A capacitor that includes a substrate having a first principal surface, a second principal surface facing the first principal surface, and a first end surface connecting the first principal surface and the second principal surface, a lower electrode on the first principal surface of the substrate, a dielectric film on the lower electrode, an upper electrode on the dielectric film, a protective film covering the upper electrode and having a thickness smaller than that of the substrate, and a first terminal electrode on the first end surface and electrically connected to one of the upper electrode and the lower electrode.

A capacitor that prevents generation of a substrate capacitance composed of an upper electrode, a substrate, and a lower electrode. Specifically, the capacitor includes a substrate; a lower electrode disposed on the substrate; a dielectric film disposed on the lower electrode; an upper electrode disposed on a part of the dielectric film; and a first terminal electrode that is connected to the upper electrode. Moreover, the upper electrode and the first terminal electrode are formed in a region for forming the lower electrode in a plan view of the capacitor viewed from the first terminal electrode side.

Growing community of inventors

Nagaokakyo, Japan

Masatomi Harada