Sharp Kabushiki Kaisha Corporation

Nitto-Denko Corporation

Masatomi Harada

Takeshi Kamikawa

Toshihiko Sakai

Tokuaki Kuniyoshi

Kazuya Tsujino

Liumin Zou

Hiroshi Iwata

Kohtaroh Kataoka

Kenichi Higashi

Yoshiji Ohta

Nobutoshi Arai

Kohichiroh Adachi

Kazumasa Tanaka

Masaru Nomura

Yoshifumi Yaoi

Shigeki Muta

Yuta Matsumoto

Naoki Koide

Takayuki Ogura

Naoyuki Nishiyama

Kouichirou Adachi

Naoki Asano

Hiroshi Kotaki

Rihito Suganuma

n-type amorphous semiconductor layers () and p-type amorphous semiconductor layers () are alternately disposed on the back surface of a semiconductor substrate () so as to be separated from each other at a desired interval paralleled with the direction of the surface of the semiconductor substrate (). An electrode () is disposed on the n-type amorphous semiconductor layer (), and an electrode () is disposed on the p-type amorphous semiconductor layer (). A protective film () includes an insulating film, and is disposed on a passivation film (), the n-type amorphous semiconductor layer (), the p-type amorphous semiconductor layer (), and the electrodes (), so as to be in contact with the passivation film (), the n-type amorphous semiconductor layer (), the p-type amorphous semiconductor layer (), and the electrodes ().

Photovoltaic devices, photovoltaic modules provided therewith, and solar power generation systems

Provided is a photoelectric conversion device capable of suppressing diffusion of a dopant in a p layer or n layer into an adjacent layer. A photoelectric conversion device is provided with a silicon substrate, a substantially intrinsic amorphous layer formed on one surface of the silicon substrate, and a first conductive amorphous layer that is formed on the intrinsic amorphous layer. The first conductive amorphous layer includes a first concentration layer and a second concentration layer that is stacked on the first concentration layer. The dopant concentration of the second concentration layer is 8&#xd7;10cmor more, and is lower than the dopant concentration of the first concentration layer.

Photoelectric conversion device

In a photovoltaic device (), first amorphous semiconductor portions () and second amorphous semiconductor portions () are provided alternately on one of faces of a semiconductor substrate (). Each first amorphous semiconductor portion () has at least one first amorphous semiconductor strip (), and each second amorphous semiconductor portion () has at least one second amorphous semiconductor strip (). A plurality of first electrodes () are provided spaced apart from each other on each first amorphous semiconductor strip (), and a plurality of second electrodes () are provided spaced apart from each other on each second amorphous semiconductor strip ().

Photovoltaic device

A photovoltaic device and a photovoltaic module are provided that suppressing diffusion of boron and thereby improving conversion efficiency. A photovoltaic deviceincludes: a semiconductor substrate; an intrinsic amorphous semiconductor layerprovided on the semiconductor substrate; n-type amorphous semiconductor stripscontaining phosphorus as a dopant; and p-type amorphous semiconductor stripscontaining boron as a dopant, the n- and p-type amorphous semiconductor stripsandbeing provided alternately on the intrinsic amorphous semiconductor layeras viewed along an in-plane direction. Each n-type amorphous semiconductor stripincludes a reduced-thickness region TD(n) on a face thereof adjacent to one of the p-type amorphous semiconductor strips. Each p-type amorphous semiconductor stripincludes a reduced-thickness region TD(p) on a face thereof adjacent to one of the n-type amorphous semiconductor strips. The reduced-thickness region TD(p) of the p-type amorphous semiconductor striphas a steeper angle of inclination than does the reduced-thickness region TD(n) of the n-type amorphous semiconductor strip

A photovoltaic device () includes: an i-type amorphous semiconductor layer () formed in contact with one of the surfaces of a semiconductor substrate (); p-type amorphous semiconductor strips () spaced apart from each other and provided on the i-type amorphous semiconductor layer (); and n-type amorphous semiconductor strips () spaced apart from each other and provided on the i amorphous semiconductor layer (), each n-type amorphous semiconductor strip () being adjacent to at least one of the p-type amorphous semiconductor strips () as traced along an in-plane direction of the semiconductor substrate (). The photovoltaic device () further includes electrodes () as a protection layer formed in contact with the i-type amorphous semiconductor layer () between adjacent p-type amorphous semiconductor strips () and between adjacent n-type amorphous semiconductor strips ().

A film-forming method for forming a thin film on a substrate includes a contact step, an external force removal step, and a film-forming step. At the contact step (step B), the substrateand a memberin contact with one surface of the substrate is stacked, and the substrateand the memberin contact with one surface of the substrate are placed under vacuum while an external force is applied in a direction in which the substrateand the memberin contact with one surface of the substrate are stacked. At the external force removal step (step C), the external force is removed at atmospheric pressure or under vacuum. At a film-forming step (step E), a thin film is formed on the one surface or the other surface of the substrate

Film-forming method

There is provided a photoelectric conversion element which includes an n-type single crystal silicon substrate (). The n-type single crystal silicon substrate () includes a central region () and an end-portion region (). The central region () is a region which has the same central point as the central point of the n-type single crystal silicon substrate () and is surrounded by a circle. The diameter of the circle is set to be a length which is 40% of a length of the shortest side among four sides of the n-type single crystal silicon substrate (). The central region () has a thickness t. The end-portion region () is a region of being within 5 mm from an edge of the n-type single crystal silicon substrate (). The end-portion region () is disposed on an outside of the central region () in an in-plane direction of the n-type single crystal silicon substrate (), and has a thickness twhich is thinner than the thickness t. The end-portion region () has average surface roughness which is smaller than average surface roughness of the central region ().

Photoelectric conversion element and solar cell module provided with same

Disclosed is a photovoltaic deviceincluding a plurality of cluster power generation sections G (G, G, G, and G). Each cluster power generation section G includes unitary power generation sections D (D, D) connected in series via connection points CP. The cluster power generation sections G each have at least a predetermined one of the connection points CPdesignated as a specific connection point SP. The specific connection points SPare connected together to link the cluster power generation sections G.

Photovoltaic device, photovoltaic system, and vehicle including photovoltaic device

A power storage system includes an electric power conversion apparatus, an electric power generation source, and a power storage unit. The power storage unit is configured to have a stored power voltage equal to or higher than a first control voltage to be given to a control unit, the first control voltage being necessary for electric power conversion operation by a DC-DC converter in the electric power conversion apparatus. The control unit in the electric power conversion apparatus is configured to start operating and control an operation of a first switch, when a generated power voltage of the electric power generation source reaches a second control voltage lower than the first control voltage.

Electric power conversion apparatus, power storage system and power storage method

A photovoltaic apparatus according to the present invention includes a photovoltaic module and a tracking control device. The photovoltaic module includes a plurality of series portions coupled in parallel. The series portion includes a plurality of photovoltaic elements coupled in series. The photovoltaic elements coupled in a same straight row of the plurality of series portions are coupled parallel to one another. The tracking control device is configured to perform a maximum power point tracking control on an output of the photovoltaic module. The photovoltaic module includes a temperature sensor that detects a real panel temperature that is a panel temperature when the photovoltaic module is operating.

Photovoltaic apparatus, maximum power point tracking control method and computer program in the same, and moving body including the same

The light emitting device of the invention includes a first electrode, a second electrode, and a carrier formed between the first electrode and the second electrode and containing germanium light emitters, wherein the germanium light emitters contain germanium oxide in which at least part of the germanium oxide has oxygen deficiency and have a wavelength peak of emission in both or either the range of 250 to 350 nm and/or the range of 350 to 500 nm when a potential difference is applied to the first electrode and the second electrode.

Light emitting device and method for manufacturing the same

The light emitting device of the invention comprises a first electrode, a second electrode being light transmitting, and a carrier sandwiched between the first electrode and the second electrode and containing light emitters, wherein the first electrode has a plurality of projections or a pn junction formed with a p-type semiconductor and an n-type semiconductor each on a surface being in contact with the carrier.

The present invention provides a double-sided pressure-sensitive adhesive tape or sheet including a bubble-containing pressure-sensitive adhesive layer; and a releasable liner protecting a pressure-sensitive adhesive surface of the bubble-containing pressure-sensitive adhesive layer, said releasable liner comprising at least a releasably treated layer formed by an ionizing radiation-curable silicone type releasing agent, in which the releasably treated layer formed by the ionizing radiation-curable silicone type releasing agent is employed onto a pressure-sensitive adhesive surface on the heavier releasable side. The double-sided pressure-sensitive adhesive tape or sheet may employ a bubble-containing pressure-sensitive adhesive layer formed by a bubble-containing pressure-sensitive adhesive composition in the form in which a gas component is mixed in a pressure-sensitive adhesive composition.

Double-sided pressure-sensitive adhesive tape or sheet

A release-treated substrate is a release-treated substrate having a release treating agent layer by a cationically polymerizable ultraviolet curing silicone treating agent at least partially on at least one side of the substrate, and is characterized in that the cationically polymerizable ultraviolet curing silicone treating agent is at least partially applied to at least one side of the substrate, and heat treatment is then conducted before conducting ultraviolet irradiation treatment. As the cationically polymerizable ultraviolet curing silicone treating agent, a cationically polymerizable ultraviolet curing silicone treating agent in which a modified silicone polymer component having at least two epoxy groups in the molecule is an effective component is suitable. It is preferable that temperature in the heat treatment is from 35 to 120&#xb0; C.

Growing community of inventors

Sakai, Japan

Masatomi Harada