Kabushiki Kaisha Toshiba

Masatoki Nakabayashi

Kenichi Nakamura

Nagataka Tanaka

Sohei Manabe

Katsuhiro Gonpei

Takao Kuwahata

A solid-state imaging device includes a plurality of photo receivers arranged in a two-dimensional array on a semiconductor substrate, the photo receivers receiving exit light from an imaging optical system; and a plurality of condensing lenses arranged over the said plurality of photo receivers, respectively. At least either the plurality of condensing lenses or the plurality of photo receivers are arranged at smaller pitches where an absolute value of an exit pupil position in the imaging optical system is large and at greater pitches where the absolute value of the exit pupil position is small.

Solid-state imaging device equipped with light converging micro-lenses and camera apparatus using the same

A photoconductive target of an image pickup tube consists of a transparent substrate, a transparent conductor formed thereon, a photoconductive layer, containing Cd, Te and Se and formed on the conductive layer, and a high resistance layer formed on the photoconductive layer. The Molar ratios of Cd, Te and Se contained in the photoconductive layer satisfy a general formula CdTe.sub.1-x Se.sub.x where x falls within the range between 0.3 and 0.5.

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Kawasaki, Japan

Masatoki Nakabayashi