Tokyo Shibaura Electric Co., Ltd.

Masato Uchida

Toshio Yonezawa

Takashi Ajima

Taketoshi Kato

Kenichi Goto

A semiconductor device comprising a semiconductor substrate and protective films formed thereon. The protective films comprise at least one silicon carbide film which may be pure or may contain particular impurities.

Semiconductor device with thermally compensating SiO.sub.2 -silicate

A semiconductor device includes a semiconductor substrate and a silicon carbide film formed in direct contact with the surface of the semiconductor substrate. The silicon carbide film may have a proper purity or include at least one element selected from the group consisting of hydrogen, oxygen, nitrogen, helium, argon or chlorine.

Semiconductor device with silicon carbide-glass-silicon carbide

Semiconductor device elements are formed in a cavity portion on one main surface of a large diameter wafer, the cavity portion being protected by a frame body formed at the peripheral portion of the wafer. The semiconductor device elements are separated into individual semiconductor devices.

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Yokohama, Japan

Masato Uchida