Matsushita Electric Industrial Co., Ltd.

Masato Tsunoda

Noriaki Matsuno

Hirofumi Wada

Rie Itoh

A basic cell of the present invention comprises a plurality of wires which constitute a wiring route of 90&#xb0;, one ends of the plurality of wires being on one of opposite sides, and the other ends of the plurality of wires being on the other one of the opposite sides, wherein: each of the one ends of the plurality of wires is point-symmetric to any of the other ends of the plurality of wires with respect to the center of the area of the basic cell; and routes of the plurality of wires do not cross one another.

Basic cell, edge cell, wiring shape, wiring method, and shield wiring structure

A semiconductor integrated circuit device () is composed of an LSI function unit () and a shield wiring layer () formed on the unit. The LSI function unit () includes a semiconductor substrate () and a first insulating film (), and the semiconductor substrate () is formed with a circuit element including, for example, a MOS transistor (). The shield wiring layer () is composed of a lower shield line (), a third insulating film (), an upper shield line (), and a fourth insulating film () sequentially stacked above a second insulating film (). The directions in which the lower and upper shield lines () and () are arranged intersect each other.

Growing community of inventors

Kyoto, Japan

Masato Tsunoda