Other

Mitsubishi Denki Kabushiki Kaisha

Ryoden Semiconductor System Engineering Corporation

Shikoku Instrumentation Co., Ltd.

Masato Toyota

Toshio Komemura

Hiroshi Tanaka

Hiroshi Ohnishi

Yasuhiro Kimura

Tamio Matsumura

Hirotoshi Ise

Toshihiko Noguchi

Kiyoshi Maeda

Toshiki Oono

Masayuki Kobayashi

A defect inspecting device for a wafer is built in a positioning device for positioning a wafer , as a substrate to be processed, in a semiconductor manufacturing process. Light is irradiated on the wafer held on a vacuum holding base while rotating the wafer at least one rotation from a position where the wafer is positioned and the scattered light is received. An operation unit and a control unit judge that if the intensity of the scattered light exceeds a predetermined threshold, a defect is detected on the wafer

Defect inspecting device for substrate to be processed and method of manufacturing semiconductor device

Components such as an earth plate, a gas introduction ring, and the like placed in a reaction chamber in a plasma apparatus are made of aluminum containing magnesium in a concentration of 2.2 to 2.8% by weight and are not coated with alumite. In addition, a heater incorporated in a section of the reaction chamber heats the section during a plasma cleaning process. Further, an electrical discharge chamber is also incorporated in the plasma apparatus for providing a plasma to the reaction chamber for efficient plasma cleaning of the apparatus.

Plasma apparatus

Growing community of inventors

Tokyo, Japan

Masato Toyota