Ministry of International Trade & Industry

National Institute of Advanced Industrial Science and Technology

Agency of Industrial Science and Technology

Agency of Industrial Science

Masato Tazawa

Hiroshi Taoda

Kiyoshi Hayakawa

Hiromi Yamakita

Ping Jin

Shidong Ji

Thermochromic microparticles including vanadium dioxide (VO) particles of a rutile crystal phase (R phase), and titanium dioxide (TiO) particles of the rutile crystal phase (R phase), wherein at least one of the vanadium dioxide (VO) particles of a rutile crystal phase (R phase) is grown like a rod on the titanium dioxide (TiO) particles to be larger than sizes of the titanium dioxide (TiO) particles.

Thermochromic microparticles, dispersions thereof, and manufacturing method thereof, as well as light-modulating coatings, light-modulating films and light-modulating inks

A heating apparatus has a spectral selective type heat radiating material having a high emissivity in a specific wavelength region. A film of the spectral selective type heat radiating material is formed on a surface of a heat radiant while leaving at least one region of the surface of the heat radiant with nothing formed thereon. The film is applied so it is possible to identify whether or not the heating apparatus is operating and to prevent the temperature of a surface of the heat radiant from rising excessively. The spectral selectivity of spectral emissivity is controlled by adjusting the thickness of the film of the spectral selective type heat radiating material.

Heating apparatus with special selective radiant material partially coated thereon

The present invention provides a method of recording information on a memory medium and reading the information, comprising the steps of forming a reflective or transmissive surface having an anisotropic microstructure on a substrate of the memory medium to record information in the microstructure, entering light onto the reflective or transmissive surface, and detecting change in the polarization or intensity of a reflected or transmitted light caused by the microstructure, to read the information. The present invention also provides a memory medium, a production method thereof, and an information reading system.

Optical memory

A method for the production of a photoelectrochemical cell includes forming an anion-doped long-chain alkylthiophene polymer layer on one surface of a semiconductor directly or through the medium of a coating of a noble metal formed in advance on said one surface, interposing a solid electrolyte between a transparent electrode and the anion-dope long-chain alkylthiophene polymer on the semiconductor, and finally connecting a lead wire to the other surface of the semiconductor. A photoelectrochemical cell is produced by the method described above and consists essentially of a layer of an anion-doped long-chain alkylthiophene polymer formed on one surface of a semiconductor directly or through the medium of a coating of a noble metal formed in advance, a transparent electrode, and a solid electrolyte interposed between the polymer layer and the transparent electrode.

Method for production of photoelectrochemical cell and cell produced

A fuel gas is produced from an aqueous acetone solution by causing the aqueous acetone solution to contact powdered silicon and exposing the resultant product of this contact to light.

Method for gasification of aqueous acetone solution

A shaped article of halogenated polymer which is obtained by causing a halogen to react upon a shaped article of a polymer by irradiation of light is irradiated with light in the presence of an acetylene compound to have the acetylene compound graft polymerized onto the shaped article of polymer.

Method for graft polymerization of acetylene compound on a shaped

On a silicon semiconductor or a silicon semiconductor having a coating of a noble metal, a polymer film is deposited by immersing the silicon semiconductor or the silicon semiconductor with the noble metal coating in a solution containing a thiophene compound, applying a voltage to the silicon semiconductor as an electrode and, at the same time, exposing the silicon semiconductor to light.

Growing community of inventors

Nagoya, Japan

Masato Tazawa