Hitachi, Ltd.

Samsung Electronics Co., Ltd.

Yoshino Kogyosho Co., Ltd.

Fujitsu Corporation

Mitsubishi Electric Corporation

Ricoh Company, Ltd.

Hitachi High-Tech Science Corporation

Toyota Jidosha Kabushiki Kaisha

Renesas Electronics Corporation

Mitsubishi Heavy Industries Limited

Mitsubishi Heavy Industries Engineering, Ltd.

Toyota Jidosha Kogyo Kabushiki Kaisha

Hitachi Medical Corporation

Adeka Corporation

Uniden Corporation

Masato Suzuki

Seigo Kotani

Kiyoshi Nakamura

Kyong-Hwan Kim

Seung-wook Jeong

Min Hyung Kim

Young Sun Shin

Makoto Sato

Hideki Miyazaki

Satoshi Tomimatsu

Tetsuo Takahashi

Yuji Suzuki

Hideki Kimura

Kiyoshi Nakata

Mitsuhiro Shigeri

Hiromi Inaba

Norio Okada

Tatsuya Asahata

Akiho Ota

Katsuaki Morita

Yoshio Sakai

Masahiro Yonekawa

Akihiro Inomata

Masato Kobayashi

Masaaki Sasaki

Hiroshi Sano

Hiroshi Morita

Masayoshi Suzuki

Akihiko Emori

Kenji Kikuchi

Masahiko Ibamoto

Takashi Ono

Seiji Terazawa

Nobuo Takami

Noriyuki Kimura

Ayumu Morita

Soshiro Kuzunuki

Keiichi Yano

Junji Yamabe

Takuya Kinoshita

Motoo Suwa

Atsushi Uemoto

Mitsuru Shiokawa

Hiroshi Takenaga

Eisuke Hori

Eunhye Kim

Shinji Fujita

Takafumi Betsui

Keiichi Kondo

Hideo Ichikawa

Eiichi Toyota

Byeong-Yong Song

Tokunosuke Tanamachi

Amitoj Singh

Yong Kwon Won

Motomi Shimada

Hiromi Shimura

Goan Su Jung

Hyun Mook Kim

Mutsuhiro Terunuma

Masato Negishi

Junichi Chiba

Kenji Yoshikawa

Kenji Yoneda

Daisuke Uesugi

Yoshio Tsutsui

Yoshihide Kawamura

Minoru Abe

Hongkue Lee

Takayuki Kono

Atsuya Fujino

Fumio Ogata

Toshimitsu Tobita

Kazuyuki Wakasugi

Keiichi Ikeda

Hiroshi Narita

Jun Yoshida

Ryota Yano

Takashi Kaneko

Kenichi Kawamura

Kohei Yamaguchi

Makoto Kurata

Satoshi Ichimura

Masao Takatoo

Shigetoshi Okamatsu

Toshihiko Niinomi

Shigeyuki Araki

Yukihide Yanobu

Hisakatsu Kiwaki

Takayuki Matsui

Makoto Takada

Takanori Tsuyuki

Satoru Inarida

Masashi Hasegawa

Tetsuo Kamimoto

Kazuhiro Sakata

Ayumi Fuchida

Yuji Toda

Manabu Takamoto

A plurality of laser diode bars and a plurality of dummy bars are alternately arranged on projections provided on an upper surface of a plate so that an opening of the plate is sandwiched between the projections. The plurality of laser diode bars and the plurality of dummy bars are arranged with the projections as reference positions. End surfaces of the plurality of laser diode bars are protruded upward relative to the plurality of dummy bars. Next, an insulation film is formed on protruding portions of the plurality of laser diode bars relative to the plurality of dummy bars.

Method for forming film on end-surface of laser diode bar

A dummy bar is used to align a laser diode bar during deposition of an insulating film on a front end face () and a rear end face () of a laser diode bar (), the dummy bar including a body part () having a plate shape, and including a pair of side surfaces (), an upper surface (), and a lower surface (), the body part having a longitudinal length equal to a longitudinal length of the laser diode bar (), the pair of side surfaces () being orthogonal to a longitudinal direction and opposite each other, the upper surface () and the lower surface () being orthogonal to the pair of side surfaces, parallel to a thickness direction of the plate shape, and opposite each other and a handle part () provided at a position separated from the lower surface () on each of the pair of side surfaces ().

Dummy bar configured to align laser diode bar during deposition of film on end faces of laser diode bar and method for depositing film on end faces of laser diode bar

A semiconductor device production method includes providing a first electrode and a second electrode on a rear surface of a substrate where an active region emitting light is formed and providing a laminated object formed of a material less brittle than the substrate at part of a region between the first electrode and the second electrode so as to position directly below the active region; and exposing a plane on which the active region appears by cleavage of the substrate together with the laminated object in a state where the laminated object is located directly above the active region.

Semiconductor device production method

In a semiconductor chip manufacturing device which produces a plurality of LD chips by dividing a semiconductor wafer, being placed in a casing in which a fluid medium is filled, on which a block line is formed in advance and also on which a scribed line is inscribed so that a microcrack is formed along the scribed line, the semiconductor chip manufacturing device comprises a reception stage for supporting the semiconductor wafer, and a blade cutting-edge for pressurizing the semiconductor wafer along its crack portion made of the block line or the scribed line, so that the semiconductor wafer is divided into a plurality of LD chips by pressurizing it by means of the blade cutting-edge along the crack portion in the fluid medium.

Semiconductor chip manufacturing device and method of manufacturing semiconductor chips

Provided is a washing machine including a main body having an opening and a door assembly disposed at the opening, wherein the door assembly includes a door that opens and closes the opening and an auxiliary washing unit having an auxiliary washing space in which hand-washing can be performed, and provided to pivot about one side of the door in an inside of the door. Through this configuration, separated washing spaces can be provided and separate hand-washing can be performed. Also, pressure of washing water supplied into the washing machine can be regulated so that water supply efficiency can be improved and a flow rate of the washing water can be adjusted.

Washing machine and washing water supply device

A double container includes: an outer layer body including an outer mouth portion and a barrel portion; an inner layer body including an inner mouth portion and a containing portion; an outside air introduction port for introducing outside air; and a plurality of vertical ribs arranged with spacing in a circumferential direction on an inner surface of the outer layer body or an outer surface of the inner layer body, and each extending over the outer mouth portion to the shoulder portion or extending over the inner mouth portion to the containing portion, wherein at least one of the plurality of vertical ribs faces the outside air introduction port.

Double container

A method for manufacturing semiconductor devices includes: forming a plurality of semiconductor devices in a first region of a primary surface of a wafer; forming a plurality of cleave initiation portions in a second region of a primary surface different from the first region; and cleaving the wafer sequentially, using the plurality of cleave initiation portions as initiation points, starting from a cleave initiation portion that is relatively difficult to cleave among the plurality of cleave initiation portions. Forming the plurality of cleave initiation portions includes forming the plurality of first grooves by etching portions of the second region. Due to this, the yield and the manufacturing efficiency for semiconductor devices can be enhanced.

Method for manufacturing semiconductor devices

A certain amount of contents is easily sprayed by one pressing operation. A metered spray unitbeing mounted on a stemof a valvethat is provided on the upper portion of a container body, configured to spray a certain amount of contents in a container body, includes an outer cylinderwhich is provided with a stem insertion holeinto which the tip of the stemis inserted and the inner wall thereof is fixed to the stem, a metering chamberconnected to the stem insertion hole, the metering chamber being an internal space having a predetermined capacity, connected to the stem insertion hole, and an spray portcommunicating with the metering chamber, a plug memberthat is inserted from the inside of the metering chamberinto the spray portfor blocking the spray port, a push button, an elastic memberfor supporting the push buttonon the outer cylinder, and a shaft memberconnected to the push button. The elastic memberhas an amount of displacement due to the pressing force applied to the push button, being smaller than the amount of displacement when applying the same pressing force to the spring for urging the stemwithin the valve

Fixed quantity injection unit

Provided are a thin film sample creation method and a charged particle beam apparatus capable of preventing a thin film sample piece from being damaged. The method includes a process of processing a sample by irradiating a surface of the sample with a focused ion beam (FIB) from a second direction that crosses a normal line to the surface of the sample to create a thin film sample piece and a connection portion positioned at and connected to one side of the thin film sample piece, a process of rotating the sample around the normal line, a process of connecting the thin film sample piece to a needle for holding the thin film sample piece, and a process of separating the thin film sample piece from the sample by irradiating the connection portion with a focused ion beam from a third direction that crosses the normal line.

Method of preparing thin film sample piece and charged particle beam apparatus

A liquid blow molding method molds a bottomed tubular-shaped preform into a liquid containing container. The method includes a nozzle engaging step of engaging a blow nozzle with a mouth of the preform; a molding step of molding the preform into a container of a predetermined shape by supplying a pressurized liquid from a pump into the preform; a suck-back step of sucking back a predetermined volume of liquid out of the container into a supply path; a nozzle closing step of closing the blow nozzle by a sealing body; and a discharge step of discharging a liquid in the supply path by a predetermined volume from a discharge port by operating, after the nozzle closing step, a pump in a positive direction with the discharge port connected to the supply path opened.

Liquid blow molding method

A method includes a step of forming a plurality of semiconductor devices having active regions, in a wafer, a step of forming a plurality of cleavage grooves on an upper surface side of the wafer, and a step of cleaving the wafer from the upper surface side of the wafer to expose steps formed by the plurality of cleavage grooves, and the plurality of active regions, on a sectional surface, wherein the active region is provided in a semicircle that has a radius that is a distance from a bottom of the cleavage groove to a lower surface of the wafer, and has a center that is on the lower surface of the wafer and is immediately below the cleavage groove in a cleavage propagation direction.

Method for manufacturing semiconductor device

Robotic device

A headrest is provided including an upper pillow section that configures a front side of an upper portion of the headrest, and a lower pillow section that configures a front side of a lower portion of the headrest. A front-rear position of the lower pillow section with respect to the upper pillow section is adjustable by swinging the lower pillow section about a shaft extending along a seat width direction at an upper edge side of the lower pillow section, and a protrusion amount by which respective seat width direction side portions of the lower pillow section protrude toward a seat front side being adjustable with respect to a seat width direction intermediate portion of the lower pillow section by swinging the two seat width direction side portions about a shaft extending in a seat vertical direction.

Headrest and vehicle seat

To automatically repeat an operation of isolating a sample piece, which is formed by processing a sample with an ion beam, and transferring the sample piece to a sample piece holder, a charged particle beam device includes a computer configured to perform control so that, without rotating a needle with which the sample piece is fixed to the sample piece holder, a deposition film deposited on the needle is irradiated with a charged particle beam from a charged particle beam irradiation optical system.

Charged particle beam device

Growing community of inventors

Tokyo, Japan

Masato Suzuki