Semiconductor Energy Laboratory Co., Ltd.

Tdk Corporation

National Institute of Advanced Industrial Science and Technology

The Westaim Corporation

Masato Susukida

Takeshi Fukada

Masayoshi Abe

Kunio Suzuki

Mikio Kinka

Katsuhiko Shibata

Shunpei Yamazaki

Susumu Nagayama

Ippei Kobayashi

Kaoru Koyanagi

Jun Hagiwara

Katsuto Nagano

Yoshio Saita

Takashi Inujima

Jun Hirabayashi

Yasuhiro Aida

Atsushi Yoshida

Yasuyuki Arai

Shumpei Yamazaki

Hisato Shinohara

Yukihiko Shirakawa

Yuki Yamashita

Tetsuo Tsuchiya

Noriya Ishida

Akemi Satake

A solar cell which can increase its open-circuit voltage, short-circuit current, and fill factor (F.F.), thereby enhancing its conversion efficiency is provided. The solar cell of the present invention comprises a p-type semiconductor layer and an n-type semiconductor layer, formed on the p-type semiconductor layer, containing a compound expressed by the following chemical formula (1):ZnOSSe&#x2003;&#x2003;(1)where x&#x2267;0, y&#x3e;0, and 0.2&#x3c;x+y&#x3c;0.65.

Solar cell and method of manufacturing solar cell

The present invention provides a method for producing a perovskite-structure oxide, with which a highly crystalline oxide layer is formed on a base layer that is metal or the like. The method comprises the steps of: forming, on a base layer, a buffer layer having thermal conductivity lower than thermal conductivity of the base layer; forming a precursor layer of an ABO-type perovskite-structure oxide comprising Ba at A sites thereof and Ti at B sites thereof on the buffer layer; decomposing the precursor layer, thereby forming an oxide layer comprising Ba and Ti; and annealing the oxide layer by irradiating laser light thereon.

Method for producing perovskite-structure oxide

A solar cell is provided as one capable of increasing the open voltage when compared with the conventional solar cells. A solar cell according to the present invention has a p-type semiconductor layer containing a group Ib element, a group IIIb element, and a group VIb element, and an n-type semiconductor layer containing a group Ib element, a group IIIb element, a group VIb element, and Zn and formed on the p-type semiconductor layer. A content of the group Ib element in the n-type semiconductor layer is from 15 to 21 at. % to the total number of atoms of the group Ib element, the group IIIb element, the group VIb element, and Zn in the n-type semiconductor layer, and a content of Zn in the n-type semiconductor layer is from 0.005 to 1.0 at. % to the total number of atoms of the group Ib element, the group IIIb element, the group VIb element, and Zn in the n-type semiconductor layer.

Solar cell, and method for producing the solar cell

A composite substrate includes a substrate, an electrode formed on the substrate, a first dielectric layer of thick film dielectric formed on the electrode, a second dielectric layer formed on the first dielectric layer by a solution coating-and-firing technique, and a buffer layer formed below and/or within the first dielectric layer. The composite substrate keeps the thick-film dielectric layer fully insulating and enables functional thin films formed thereon such as a light emitting layer to perform stable operation, especially stable light emission. An EL panel using the same and a method for preparing the same are also provided.

Composite substrate, EL panel using the same, and making method

A thermal head including a protection layer having mutually opposed first and second surfaces, said first surface having a flat or protruded printing surface which is brought into contact with a heat sensitive record medium, a heat generating section including resistors and electrodes connected to the electrodes and provided on said second surface of the protection layer, and a reinforcing member made of a low melting pint glass and provided on a side of the heat generating section remote from the protection layer. The reinforcing member improves a mechanical strength of the thermal head. The reinforcing member made of a glass also serves as a heat storage member, and thus a thermal property of the thermal head is improved. The reinforcing member may be formed by an aggregate of ceramic particles. The reinforcing member may contain a heat storage layer made of a low melting point glass and a heat conduction layer provided on the heat storage layer.

Thermal head and method of manufacturing the same

An wear-resistant layer constituting a printing surface which is brought into contact with a thermal record medium is formed on a provisional substrate having a groove formed in its surface, said groove having a substantially semicircular cross section, and a heat generating layer electrically conductive layers and electrically connected to the heat generating layer, a protection layer and a heat storage layer are stacked in turn to form a printing section. Next, a driving IC for controlling a heating electric power to be supplied to the printing section is connected to the electrically conductive layer and a wiring section for connecting the driving IC to an external circuit is provided. Thereafter, the printing section is secured to a heat dissipating member by means of a resin and a common electrode and wires are secured to the heat dissipating member by means of both-sided adhesive tapes and After covering an assembly with an etching resist except for the substrate the substrate is removed by etching and the printing surface protruded outwardly is exposed.

A thermal head including a protection layer having mutually opposed first and second surfaces, said first surface having a printing surface which is brought into contact with a heat sensitive record medium and is protruded from the remaining portion of the first surface of the protection layer, a heat generating sections including resistors and electrodes connected to the electrodes and provided on said second surface of the protection layer at said protruded printing surface, a heat control section including a heat storage layer and a heat conduction layer and provided on said heat generating section, and a driving IC connected to said electrodes. In order to improve the mechanical strength of the thermal head, a reinforcing layer made of a glass is provided on said first surface of the protection layer except for said printing surface such that a surface of said reinforcing layer is not higher than said first surface of the protection layer at said protruded printing surface.

A cold cathode electron source element having a cold cathode on a substrate. The cold cathode has dispersed in a cold cathode base particles of a conductive material having a lower work function than the base and a particle size which is sufficiently smaller than the thickness of the cold cathode. The element can be driven with a low voltage to induce high emission current in a stable manner. The cold cathode is easily processable. The element can have an increased surface area.

Cold cathode electron source element and method for making

Cold cathode electron source element with conductive particles embedded

An improved semiconductor processing is disclosed. In the manufacturing process, a semiconductor layer is formed and then undergoes photo annealing. A neutralizer is then introduced to the photoannealed semiconductor. The semiconductor thus formed demonstrates the SEL effect instead of the Staebler-Wronski effect.

Method for photo annealing non-single crystalline semiconductor films

An improved semiconductor device is disclosed which is free from current leakage due to pin-holes or other gaps. Also an improved method for provessing a semiconductor device is shown. According to the invention, gaps produced in fabricating process of the semiconductor layer are filled with insulator in advance of deposition of electrodes. By virtue of this configuration, short current paths do not result even if transparent electrode is provided on the semiconductor layer.

Method for manufacturing a semiconductor device free from electrical

An improved method for manufacturing uniform films or etching uniformly on a plurality of substrates is shown. The substrates are vertically placed in a reaction chamber so as to be treated at once. A chemical vapor reaction takes place by virtue of a high frequency electric power which is modulated in its amplitude. By this modulation, the deposition or etching can be carried out over the surface of a susbtrate.

Chemical vapor processing method for deposition or etching on a

An improved semiconductor processing is desclosed. In the manufacturing process, just formed semiconductor layer undergoes photo annealing and latent dangling bonds are let appear on the surface and gaps, then neutralizer is introduced to the ambience of the semiconductor. The semiconductor thus formed demonstrates SEL effect in place of Staebler-Wronski effect.

Growing community of inventors

Tokyo, Japan

Masato Susukida