Sharp Kabushiki Kaisha Corporation

Masato Sumikawa

Kazumi Tanaka

Tsukasa Inoguchi

Shin Itoh

Yoshinobu Nakamura

Masahiro Ikehara

Tomotoshi Sato

Shin Ito

Yutaka Okada

Masao Yasuda

In the line light source device and the plane light emission device, first recessesare formed between adjoining light emission elements, on surfaces of sealing resin layersopposite to the board. The line light source device and the plane light emission device, in which the light emission elements are coated with resin, have a simple configuration and high uniformity in luminous intensity in an emission end face of the device.

Line light source device, plane light emission device, plane light source device, and liquid crystal display

A surface light source includes a light source and an optical waveguide plate. The light source serves to emit light. The optical waveguide plate has an incident end face where the light is incident and a light exit surface where the light incident on the incident end face exits. Further, the optical waveguide plate has a refractive index n. The incident end face has a plurality of concave portions. The angle between a plane formed by the plurality of concave portions and a tangent plane of the incident end face is not more than (90&#x2212;2&#xb7;arcsin(1/n)) degree.

Surface light source and liquid crystal display including the same

A semiconductor package providing with a printed circuit board and a semiconductor device, including a semiconductor substrate having a surface provided with an external connection electrode and mounted on the printed circuit board, and, a surface opposite that with said external connection electrode, abrased with a mirror finish and reinforced with a back-surface reinforcement.

Semiconductor device having reinforcement member and method of manufacturing the same

An electronic component having an electrode structure to increase an allowance positional deviation in a mounting process as well as a method and a structure for mounting a semiconductor device are provided. The semiconductor device includes, on electrodes, connection materials connecting the semiconductor device and a substrate. The connection materials include a composite connection material formed of a core and a conductor covering the core, the core having an a low modulus of elasticity at room temperature smaller than that of the conductor at room temperature, and a single-layer connection material formed of a conductor.

Electronic component and method and structure for mounting semiconductor device

In the semiconductor device, externally connecting electrodes are placed on a semiconductor substrate. A rewiring pattern for connecting each on-chip electrode to corresponding external connecting electrode is routed, in the vicinity of the externally connecting electrode, in a direction where the effect of strain after mounting of the semiconductor substrate is small. Specifically, the rewiring pattern is routed such that the routing direction will not match the direction coupling the center of the semiconductor substrate to the externally connecting electrode along which large thermal stress is expected. Accordingly, strain that will occur at the rewiring pattern after mounting the semiconductor substrate to the mounting board is reduced. Adverse effects of the strain stress can be prevented without widening the externally connecting interconnection.

Semiconductor device

A semiconductor device having a plurality of externally connecting electrodes arranged on a semiconductor chip includes on-chip electrodes, resin members formed separately from each other and provided corresponding to the plurality of externally connecting electrodes, and interconnections connecting the corresponding on-chip electrode and the corresponding externally connecting electrode. Such separately formed resin members for the externally connecting electrodes allow relaxation of thermal stress produced in the externally connecting electrodes.

Semiconductor device having resin members provided separately corresponding to externally connecting electrodes

A stacked semiconductor device includes a plurality of stacked semiconductor chips, each of the semiconductor chips including a penetrating electrode which penetrates from a front surface to a back surface of the semiconductor chip, a first electrode formed on the front surface, a second electrode formed on the back surface and wiring patterns formed on the front and back surfaces for selectively connecting the first and second electrodes through the penetrating electrode, the first electrode of a lower semiconductor chip abutting the second electrode of an upper semiconductor chip with respect to adjacent two of the stacked semiconductor chips.

Growing community of inventors

Kashihara, Japan

Masato Sumikawa