Toyo Tanso Co., Ltd.

Kwansei Gakuin Educational Foundation

Masato Shinohara

Satoru Nogami

Satoshi Torimi

Norihito Yabuki

Youji Teramoto

Tadaaki Kaneko

Koji Ashida

Yasunori Kutsuma

Yoshihisa Abe

Takuya Sakaguchi

Makoto Kitabatake

Yusuke Sudo

In a method for manufacturing a reformed SiC wafer(a surface treatment method for a SiC wafer) having its surface that is reformed by processing an untreated SiC waferbefore formation of an epitaxial layerthe method includes a surface reforming step as described below. That is, the untreated SiC waferincludes BPDs as dislocations parallel to an inside of a (0001) face, and TEDs. Property of the surface of the untreated SiC waferis changed so as to have higher rate in which portions having BPDs on the surface of the untreated SiC waferpropagate as TEDs at a time of forming the epitaxial layer

Method for manufacturing reformed sic wafer, epitaxial layer-attached sic wafer, method for manufacturing same, and surface treatment method

A heat treatment container () is provided with support members () for supporting a disc-shaped SiC substrate (), which is an object, at a time of an etching treatment of the SiC substrate (). Each of the support members () has an inclined surface (F) for supporting a lower surface end (E) of the SiC substrate (), the inclined surface being inclined so as to increasingly approach the centerline of the SiC substrate () going downward. More specifically, each of the support members () is formed in a conical shape with a diameter that increases going downward, and a conical surface which is the peripheral surface of each supporting member forms the inclined surface (F). A vertically-middle section of the inclined surface (F) contacts the lower surface end (E) of the SiC substrate ().

Heat treatment vessel for single-crystal silicon carbide substrate and etching method

Provided is a surface treatment method for a SiC substrate (), the method being capable of controlling whether to generate a step bunching or the type of step bunching that is generated. In the surface treatment method in which the surface of the SiC substrate () is etched by heating the SiC substrate () under Si vapor pressure, an etching mode and an etching depth which are determined at least on the basis of an etching rate, are controlled to etch the SiC substrate (), so that a surface pattern of the SiC substrate () after etching treatment is controlled.

Surface treatment method for SiC substrate

Provided are a susceptor that, in forming a thin film on a wafer, can reduce impurities or the like adhering to the wafer and a method for manufacturing the same. A susceptor includes a base material () with a recess (), a tantalum carbide layer () formed directly on a bottom surface () and a side surface () of the recess (), and a silicon carbide layer () formed on a surface of the base material () except for the recess ().

Susceptor and method for manufacturing same

Provided is a method for controlling the rate of etching of a SiC substrate based on a composition of a storing container. The etching method of the present invention is for etching the SiC substrate by heating the SiC substrate under Si vapor pressure, in a state where the SiC substrate is stored in a crucible. The crucible is formed of a tantalum metal, and has a tantalum carbide layer provided on an internal space side of the tantalum metal, and a tantalum silicide layer provided on the side further toward the internal space side than the tantalum carbide layer. The rate of etching of the SiC substrate is controlled based on difference in a composition of the tantalum silicide layer.

Etching method for SiC substrate and holding container

Provided is a silicon carbide-tantalum carbide composite having excellent durability. A silicon carbide-tantalum carbide composite () includes: a body () whose surface layer is at least partly formed of a first silicon carbide layer (); a tantalum carbide layer (); and a second silicon carbide layer (). The tantalum carbide layer () is disposed over the first silicon carbide layer (). The second silicon carbide layer () is interposed between the tantalum carbide layer () and the first silicon carbide layer (). The second silicon carbide layer () has a C/Si composition ratio of not less than 1.2 as measured by X-ray photoelectron spectroscopy. The second silicon carbide layer () has a peak intensity ratio G/D of not less than 1.0 between the G-band and D-band of carbon as measured by Raman spectroscopy.

Growing community of inventors

Kanonji, Japan

Masato Shinohara