Kioxia Corporation

Masato Shini

Minoru Oda

Yuanting Wang

Yuka Itano

Yasunori Okayama

A semiconductor storage device includes a first substrate, a second substrate, a first stacked body, and a second stacked body. The first stacked body is provided between the first substrate and the second substrate and includes a first trace, a first pad connected to the first trace, and a first insulator. The second stacked body is provided between the first stacked body and the second substrate and includes a second trace, a second pad connected to the second trace, and a second insulator. The first pad includes a plurality of first electrode portions connected to the first trace. The first insulator is provided between the plurality of first electrode portions. The plurality of first electrode portions are bonded to the second pad.

Semiconductor storage device and method for fabricating semiconductor storage device

A semiconductor device that can be downsized more than ever before is provided. A semiconductor deviceincludes: an insulating layerprovided on an upper side of a substrate; a conductorprovided within the insulating layer; a conductorprovided within the insulating layerand facing the conductorin a first direction parallel with a surface of the substrate; and an insulating filmprovided between the conductorand the conductor. A thickness of the insulating filmin the first direction is smaller than both of a thickness of the conductorin the first direction and a thickness of the conductorin the first direction. A relative permittivity of the insulating filmis higher than a relative permittivity of the insulating layer. The conductorand the conductorextend in a second direction intersecting the first direction and parallel with the substrate

Semiconductor device and method of manufacturing the same

A semiconductor device including a plurality of wirings and an insulating space is described. The insulating space is disposed between adjacent wirings of the plurality of wirings. An insulating material surrounds the insulating space. The insulating space is filled with air at a pressure no more than an atmospheric pressure.

Semiconductor device and method of manufacturing semiconductor device

A semiconductor device according to an embodiment includes first and second chips, and a first conductor. The first chip includes a first substrate, a first circuit and a first joint metal. The first circuit is provided on the first substrate. The first joint metal is connected to the first circuit. The second chip includes a second substrate, a second circuit, and a second joint metal. The second substrate includes P-type and N-type well regions. The second circuit is provided on the second substrate and includes a first transistor. The second joint metal is connected to the second circuit and the first joint metal. The first conductor is connected to the N-type well region from a top region of the second chip. The P-type well region is arranged between a gate electrode of the first transistor and the N-type well region.

Semiconductor device and manufacturing method of the same

According to one embodiment, a semiconductor device includes a first wafer, a first wiring layer, a first insulating layer, a first electrode, a second wafer, a second wiring layer, a second insulating layer, a second electrode, and a first layer. The first electrode includes a first surface, a second surface, a third surface, and a fourth surface. The second electrode includes a fifth surface, a sixth surface, a seventh surface, a second side surface, and an eighth surface. The first layer is provided between the fourth surface and a portion of the first insulating layer that surrounds the fourth surface, and is provided away from the third surface in the first direction.

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Mie Mie, Japan

Masato Shini